| Budget Amount *help |
¥46,150,000 (Direct Cost: ¥35,500,000、Indirect Cost: ¥10,650,000)
Fiscal Year 2017: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2016: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2015: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2014: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2013: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
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| Outline of Final Research Achievements |
Dislocation-free local Ge- and GeSn-on-insulator structures were successfully fabricated by utilizing a novel liquid-phase crystallization technique. This method allows us to fabricated tensile-strained GOI and GeSnOI layers due to the large difference in thermal expansion coefficient between the semiconductors and substrate. In addition, high Sn-content exceeding the solubility limit was realized with the proposed method. Thin film transistors (TFTs) fabricated with the GOI and GeSnOI structures exhibited very high carrier mobility, indicating superior crystalline quality of thin Ge and GeSn layers and big advantage in electronic device applications. Moreover, enhanced direct bandgap emission and improved NIR photo-responsivity were demonstrated with GeSn-based photonic devices. The present technology opens a way for fully-integrated group-Ⅳ-based optoelectronic integration in the post-scaling era.
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