| Project/Area Number |
25249035
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
NISHIDA MINORU 九州大学, 総合理工学研究院, 教授 (90183540)
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| Co-Investigator(Renkei-kenkyūsha) |
MITSUHARA MASATOSHI 九州大学, 総合理工学研究院, 助教 (10514218)
WANG DONG 九州大学, 総合理工学研究院, 准教授 (10419616)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥39,390,000 (Direct Cost: ¥30,300,000、Indirect Cost: ¥9,090,000)
Fiscal Year 2015: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2014: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2013: ¥24,310,000 (Direct Cost: ¥18,700,000、Indirect Cost: ¥5,610,000)
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| Keywords | Ge半導体 / 高性能デバイス / 電子材料 / 絶縁膜 / 金属/半導体コンタクト / 電子・電気材料 |
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| Outline of Final Research Achievements |
TiN/Ge contacts, prepared by direct sputter deposition, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer containing nitrogen played an important role in the alleviation. A thickness of a-IL was 1-2 nm. Based on these results, interfacial dipole model was proposed to explain the FLP alleviation.
The n-MOSFET was fabricated using the TiN/Ge contact as source/drain (S/D). The S/D parasitic resistance was as high as 1400 Ω. The parasitic resistance could be decreased down to 100 Ω using the embedded S/D structure.
The p-MOSFET was also fabricated using the HfGe/Ge contact as S/D. The S/D parasitic resistance was as high as 300 Ω. The parasitic resistance could be decreased down to 50 Ω using the PtGe-S/D.
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