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Fundamental study of high-performance, low-power transistor by hetero interface formation

Research Project

Project/Area Number 25289082
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

NIWA Masaaki  東北大学, 国際集積エレクトロニクス研究開発センター, 教授 (90608936)

Co-Investigator(Kenkyū-buntansha) HASUNUMA Ryu  筑波大学, 数理物質科学研究科, 准教授 (90372341)
SHIRAISHI Kenji  名古屋大学, 工学研究科, 教授 (20334039)
SATO Soshi  東北大学, 国際集積エレクトロニクス研究開発センター, 助教 (80649749)
Co-Investigator(Renkei-kenkyūsha) YAMABE Kikuo  筑波大学, 数理物質科学研究科, 教授 (10272171)
Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
Keywords絶縁破壊機構 / 表面・界面物理解析 / 信頼性物理 / ゲート絶縁膜 / 結晶性 / ヘテロエピタキシャル成長 / 透過型電子顕微鏡 / SiC MOS / GaN on Si(001) / 結晶欠陥 / 発光解析 / ヘテロ界面 / 断面TEM観察 / 炭化ケイ素 / MOSゲート絶縁膜 / TDDB / Soft Breakdown / Hard Breakdown / 経時酸化膜絶縁破壊 / 絨毯爆撃状絶縁破壊痕 / SiO2
Outline of Final Research Achievements

In regard to the current serious energy issue, especially from the electric energy point of view, fundamental study of high-performance, low-power MOSFET using wide band gap semiconductor, i.e., 1) Electric breakdown of Al, Ploy Si/SiO2/SiC capacitors and 2) Crystallinity of GaN/BP/Si(001) heterostructure was performed.
In case of 1), characteristic carpet-bombing-like concaves were observed by the dielectric breakdown and its developmental mechanism was clarified by means of electrical and physical analyses. This phenomenon is not observed for the conventional Si-MOS capacitors. For 2), number of defects of the crystal BP on Si(001) was found to decreased with increasing its thickness. And it was confirmed experimentaly that high quality BP buffer layer with minimized defets is imperative to obtain a high quality GaN crystal on the BP buffer layer on Si(001).

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • Research Products

    (16 results)

All 2016 2015 2014 2013 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Acknowledgement Compliant: 3 results,  Open Access: 1 results) Presentation (12 results) (of which Int'l Joint Research: 4 results,  Invited: 2 results) Remarks (1 results)

  • [Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016

    • Author(s)
      S. Sato, K. Yamabe, T. Endoh, M. Niwa
    • Journal Title

      Microelectronics Reliability

      Volume: 58 Pages: 185-191

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016

    • Author(s)
      Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
    • Journal Title

      Materials Science Forum

      Volume: 858 Pages: 485-488

    • DOI

      10.4028/www.scientific.net/msf.858.485

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014

    • Author(s)
      Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53

    • NAID

      210000144325

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016

    • Author(s)
      S. Sato, K. Yamabe, T. Endoh, M. Niwa
    • Organizer
      23 rd International Symposium on the the Physical and Failure Analysis of Integrated Circuits
    • Place of Presentation
      Manira Bay Sands, Singapore
    • Year and Date
      2016-07-18
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] SiC MOSキャパシタに見られる絨毯爆撃状破壊痕2016

    • Author(s)
      佐藤創志
    • Organizer
      NWDTF in Sendai および通研プロジェクト合同委員会
    • Place of Presentation
      東北大学 国際集積エレクトロニクス研究開発センター(仙台)
    • Year and Date
      2016-03-05
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016

    • Author(s)
      佐藤創志、 山部紀久夫、 遠藤哲郎、丹羽正昭
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第21回研究会)
    • Place of Presentation
      東レ研修センター 三島(静岡)
    • Year and Date
      2016-01-21
    • Related Report
      2015 Annual Research Report
  • [Presentation] Failure analysis of SiC MOS capacitor with poly-Si gate electrode2015

    • Author(s)
      S. Sato, K. Yamabe, T. Endoh, M. Niwa
    • Organizer
      16th International Conference on Silicon Carbide and Related Materials
    • Place of Presentation
      Giardini Naxos (Italy)
    • Year and Date
      2015-10-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015

    • Author(s)
      S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa
    • Organizer
      22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
    • Place of Presentation
      Lakeshore Hotel, Hsinchu (Republic of China)
    • Year and Date
      2015-06-29
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study of Reliability Physics on High-k/Metal Gate and Power Devices2015

    • Author(s)
      M. Niwa
    • Organizer
      22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
    • Place of Presentation
      Lakeshore Hotel, Hsinchu (Republic of China)
    • Year and Date
      2015-06-29
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Basic Study onHybridization Technologies toward Intelligent Power Devices2015

    • Author(s)
      丹羽正昭
    • Organizer
      1st CIES Technology Forum -Power Device Project
    • Place of Presentation
      大手町産経プラザ(東京都 千代田区)
    • Year and Date
      2015-03-19 – 2015-03-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] SiC MOSキャパシタのTZDB測定時動画撮影による絨毯爆撃状破壊痕形成メカニズムの解明2015

    • Author(s)
      佐藤 創志、廣井 佑紀、山部 紀久夫、北畠 真、遠藤 哲郎、丹羽 正昭
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 湘南キャンパス(神奈川県 平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] SiC熱酸化膜MOS構造における特徴的な絶縁破壊痕の解析とモデル化2014

    • Author(s)
      佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第19回研究会)
    • Place of Presentation
      ニューウェルシティー湯河原
    • Related Report
      2013 Annual Research Report
  • [Presentation] SiC熱酸化膜MOSキャパシタの絶縁破壊痕表面における炭素の挙動2014

    • Author(s)
      佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
    • Organizer
      第61回春季応用物理学会学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] 熱酸化SiC MOSキャパシタの絶縁破壊痕の形状評価2013

    • Author(s)
      佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] Carpet-Bombing-like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown2013

    • Author(s)
      Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
    • Organizer
      2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
    • Place of Presentation
      University of Tsukuba, Tokyo Campus
    • Related Report
      2013 Annual Research Report
  • [Remarks] 東北大学 国際集積エレクトロニクス研究開発センター

    • URL

      http://www.cies.tohoku.ac.jp/

    • Related Report
      2014 Annual Research Report

URL: 

Published: 2013-05-21   Modified: 2019-07-29  

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