Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxy

• Project/Area Number: 25289099
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Toyama
• Principal Investigator: Mori Masayuki 富山大学, 理工学研究部(工学), 准教授 (90303213)
• Co-Investigator(Renkei-kenkyūsha): MAEZAWA KOICHI 富山大学, 大学院理工学研究部, 教授 (90301217)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000); Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2013: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
• Keywords: InSb / Si(111) / InGaSb / GaSb / MOSFET / ALD / 短チャネル化 / 表面再構成 / 選択成長 / ゲート絶縁膜 / Al2O3 / 界面準位 / オーバーラップ構造 / 表面再構成制御成長法 / SOI基板

Outline of Final Research Achievements

To improve the device performance of Al2O3/InSb/Si n-MOSFETs, we introduced the gate electrode with overlap structure, and considered the device process using laser exposure system. We also tried to optimize the growth conditions of GaSb and/or InGaSb on Si for p-MOSFETs to realize InSb-CMOS on Si. We also measured the electric properties such as I-V, C-V properties to understand the hetero interface of n-InSb/p-Si for realization of TFETs.

Research Products

• [Journal Article] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer (2016)
  • Author(s): A.A.Mohammad Monzur-Ul-Akhir, Masayuki Mori and Koichi Maezawa
  • Journal Title: Phys. Status Solidi B Volume: 254 Issue: 2
  • DOI: 10.1002/pssb.201600528
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Presentation] Heteroepitaxial growth of InGaSbon HQ GaSb on Si(111) by two step growth method (2016)
  • Author(s): A.A.Md. Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa
  • Organizer: 平成28年応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 富山県民会館
  • Year and Date: 2016-12-10
• [Presentation] Ge(111)基板上へのInSb薄膜のエピタキシャル成長 (2016)
  • Author(s): 三枝孝彰、森雅之、前澤宏一
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 首都大学東京
  • Year and Date: 2016-07-23
• [Presentation] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method (2016)
  • Author(s): A.A.Md.Monzur-Ul-Akhir, Masayuki Mori, and Koichi Maezawa
  • Organizer: 43rd International Symposium on Compound Semiconductors (ISCS)
  • Place of Presentation: 富山国際会議場
  • Year and Date: 2016-06-26
  • Int'l Joint Research
• [Presentation] Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate (2016)
  • Author(s): Takaaki Mitsueda, Masayuki Mori, and Koichi Maezawa
  • Organizer: 43rd International Symposium on Compound Semiconductors (ISCS)
  • Place of Presentation: 富山国際会議場
  • Year and Date: 2016-06-26
  • Int'l Joint Research
• [Presentation] Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase (2015)
  • Author(s): H. Shimoyama, M. Mori, K. Maezawa
  • Organizer: International Conference on Solid State Devices and Materials(SSDM 2015)
  • Place of Presentation: Sapporo, Hokkaido
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] MOSFETs Based on InSb/Si (111) Heterostructures Having Various Oxide Layers (2015)
  • Author(s): F. Shimizu, K. Hosotani, T. Ito, M. Mori, K. Maezawa
  • Organizer: 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
  • Place of Presentation: Jeju Island, Korea
  • Year and Date: 2015-06-29
  • Int'l Joint Research
• [Presentation] Heteroepitaxial growth of InSb films on Si(100) substrate with micro facet structures (2015)
  • Author(s): E. Umemura, M. Mori, T. Sakamoto, H. Shimoyama, K. Maezawa
  • Organizer: The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
  • Place of Presentation: Toki-messe, Niigata
  • Year and Date: 2015-06-16
  • Int'l Joint Research
• [Presentation] Si(111)基板上へのGaSbエピタキシャル成長と膜質の評価 (2014)
  • Author(s): 下山裕哉、森雅之、前澤宏一
  • Organizer: 2014年(平成26年)第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Ge(111)基板上InSb薄膜の作製 (2014)
  • Author(s): 三枝孝彰、森雅之、前澤宏一
  • Organizer: 2014年(平成26年)第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] SOI(Silicon-on-Insulator)基板上へのInSbヘテロエピタキシャル成長 (2014)
  • Author(s): 坂本大地、森雅之、前澤宏一
  • Organizer: 2014年(平成26年)第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Si(111)基板上へのInxGa1-xSbエピタキシャル成長と膜質の評価 (2014)
  • Author(s): 下山裕哉、森雅之、前澤宏一
  • Organizer: 第2回有機・無機エレクトロニクスシンポジウム
  • Place of Presentation: 信州大学長野(工学)キャンパス
  • Year and Date: 2014-07-11 – 2014-07-12
• [Presentation] Electrical Characterization of n+-InSb/p-Si Heterojunctions Grown by Surface Reconstruction Controlled Epitaxy (2014)
  • Author(s): K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, and K. Maezawa
  • Organizer: 2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
  • Place of Presentation: Ryukoku University Avanti Kyoto Hall, Kyoto
  • Year and Date: 2014-06-19 – 2014-06-20
• [Presentation] Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate (2014)
  • Author(s): T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, and K. Maezawa
  • Organizer: 2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
  • Place of Presentation: Ryukoku University Avanti Kyoto Hall, Kyoto
  • Year and Date: 2014-06-19 – 2014-06-20
• [Presentation] InSb quantum well MOSFETs based on ultra thin InSb layers grown directly on Si (2013)
  • Author(s): K. Maezawa
  • Organizer: The 37th Workshop on Copound Semiconductor Devices and Integrated Circuits
  • Place of Presentation: Warnemunde, Germany
  • Invited
• [Presentation] Low resistance ohmic contacts to n-InSb employing Sn-alloys (2013)
  • Author(s): K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa
  • Organizer: The 2013 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Kansai Univ. Centenary Memorial Hall, Osaka
• [Presentation] Growth of InSb thin films on a V-grooved Si(001) substrate (2013)
  • Author(s): H. Shimoyama, Y. Yasui, T. Sakamoto, M. Mori, K. Maezawa
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
  • Place of Presentation: Ishikawa Ongakudo, Kanazawa, Ishikawa
• [Presentation] Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction (2013)
  • Author(s): X. Wang, M. Mori, K. Maezawa
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
  • Place of Presentation: Ishikawa Ongakudo, Kanazawa, Ishikawa
• [Presentation] Heteroepitaxial growth of InSb thin films on a Silicon-on-Insulator substrate (2013)
  • Author(s): T. Sakamoto, H. Shimoyama, Y. Yasui, M. Mori, K. Maezawa
  • Organizer: 2013 International Conference on Solid State Devices and Materials (SSDM 2013)
  • Place of Presentation: Hilton Fukuoka Sea Hawk, Fukuoka
• [Presentation] Selective growth of InSb using Sb-induced surface reconstruction on Si(111) substrate by molecular beam epitaxy (2013)
  • Author(s): M. Mori, X. Wang, K. Maezawa
  • Organizer: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)
  • Place of Presentation: Tsukuba International Congress Center, Tukuba
• [Presentation] 溝(111)面を形成したSi(100)基板上へのInSb薄膜の成長 (2013)
  • Author(s): 下山浩哉、森雅之、前澤宏一.
  • Organizer: 2013年（平成25年）秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学 京田辺キャンパス
• [Presentation] Si(111)上のSb再構成構造を利用したInSbの選択成長 (2013)
  • Author(s): 王昕、森雅之、前澤宏一
  • Organizer: 電子情報通信学会、電子デバイス研究会(ED)
  • Place of Presentation: 富山大学工学部
• [Remarks] http://www3.u-toyama.ac.jp/nano/
• [Remarks] 極微電子工学講座のHP
  • URL: http://www3.u-toyama.ac.jp/nano/
• [Remarks] 極微電子工学講座のHP
  • URL: http://www3.u-toyama.ac.jp/nano/