Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxy
| Project/Area Number |
25289099
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Toyama |
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Principal Investigator |
Mori Masayuki 富山大学, 理工学研究部(工学), 准教授 (90303213)
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| Co-Investigator(Renkei-kenkyūsha) |
MAEZAWA KOICHI 富山大学, 大学院理工学研究部, 教授 (90301217)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2013: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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| Keywords | InSb / Si(111) / InGaSb / GaSb / MOSFET / ALD / 短チャネル化 / 表面再構成 / 選択成長 / ゲート絶縁膜 / Al2O3 / 界面準位 / オーバーラップ構造 / 表面再構成制御成長法 / SOI基板 |
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| Outline of Final Research Achievements |
To improve the device performance of Al2O3/InSb/Si n-MOSFETs, we introduced the gate electrode with overlap structure, and considered the device process using laser exposure system. We also tried to optimize the growth conditions of GaSb and/or InGaSb on Si for p-MOSFETs to realize InSb-CMOS on Si. We also measured the electric properties such as I-V, C-V properties to understand the hetero interface of n-InSb/p-Si for realization of TFETs.
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Report
(5 results)
Research Products
(25 results)
