Low strain and high aspect ratio Cu-TSVs

• Project/Area Number: 25289258
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Ibaraki University
• Principal Investigator: Onuki Jin 茨城大学, 理工学研究科, 特任教授 (70315612)
• Co-Investigator(Kenkyū-buntansha): Inami Takashi 茨城大学, 工学部, 准教授 (20091853) ; Kondo Kazuo 大阪府立大学, 大学院工学研究科, 教授 (50250478) ; Nagano Takatoshi 茨城大学, 工学部, 講師 (70343621) ; 篠嶋 妥 茨城大学, 工学部, 教授 (80187137)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2013: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
• Keywords: Cu-TSV / ３次元実装 / 低抗率 / Cuめっき / 不純物 / 3次元実装 / 抵抗率 / 結晶粒径 / 化合物 / 低歪 / TSV / 低ひずみ

Outline of Final Research Achievements

We manufactured a new TEG patterns, and evaluated the resistivity and nano-microstructures of Cu-TSVs. Following results were obtained.1)Resistivity of Cu-TSVs was found to be 4.13μΩ・cm. 2)Existence ration of small grains less than 50nm was also found by X-ray diffraction and EBSD analysis.3)Impurities consisting of Cl,O, and metal elements were found in nano-grain boundaries by STEM. The impurities prevented grain growth during annnealing.

Research Products

• [Journal Article] Grain Size Distribution at the Bottom Region in Very Narrow Cu Interconnects (2016)
  • Author(s): Takashi Inami, Kunihiro Tamahashi, Takashi Namekawa,Akio Chiba, and Jin Onuki
  • Journal Title: Electrochemistry Volume: 84 Pages: 151-155
  • NAID: 130005131412
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Pinning Effect of Fe(ClO) and Ti(ClO) Compounds on Cu Grain Growth in Very Narrow Cu Wires (2015)
  • Author(s): Takatoshi Nagano, Yashushi Sasajima, Bobuhiro Ishikawa, Kunihiro Tamahashi,Kishio Hidaka,and Jin Onuki
  • Journal Title: ECS Electrochemistry Letters Volume: 4
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effectiveness of a periodic annealing method to coarsen Cu grains in very narrow trenches (2015)
  • Author(s): Yasushi Sasajima, Tatsuya Miyamoto, Takatoshi Saitoh, Takahiro Yokoyama and Jin Onuki
  • Journal Title: Microelectronic Engineering Volume: 131 Pages: 43-50
  • DOI: 10.1016/j.mee.2014.10.006
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Five-Minute TSV Copper Electrodeposition (2014)
  • Author(s): Kazuo Kondo, Chikara Funahashi,Yuko Miyake
  • Journal Title: Journal of The Electrochemical Society Volume: 161 Issue: 14 Pages: D791-D793
  • DOI: 10.1149/2.0751414jes
  • Peer Reviewed / Open Access
• [Journal Article] Resistivity Reduction in Very Narrow Cu Wiring (2013)
  • Author(s): Jin Onuki,Yasushi Sasajima,Kunihiro Tamahashi,Ke-YiQing,S.Terada,K.Hidaka and S.Itoh
  • Journal Title: J.Electrochem.Soc. Volume: Vol.160
  • Peer Reviewed
• [Journal Article] Development of Grain Size Evaluating Process in Very Narrow Cu Interconnects (2013)
  • Author(s): Takashi Inami,Kishio Hidaka,Shohei Terada and Jin Onuki
  • Journal Title: ECS Electrochemistry Letters Volume: Vol.2
  • Peer Reviewed
• [Journal Article] Searching for barrier materials for Cu wire in LSI (2013)
  • Author(s): Yasushi Sasajima, Takatoshi Nagano, and Jin Onuki
  • Journal Title: ECS Journal of Solid State Science and Technology Volume: Vol.2 Pages: 351-356
  • Peer Reviewed
• [Presentation] Investigation on Microstructure and Resistivity in Cu-TSVs for 3D Packaging (2016)
  • Author(s): Akira Satoh,Hiroyuki Kadota, Takashi Inami,Kunihiro Tamahashi, Msahiko Itou,and Jin Onuki
  • Organizer: 2016 International Conference on Electronics Packaging
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2016-04-20
  • Int'l Joint Research
• [Presentation] 高純度微小銅めっきと抵抗減少機構 (2014)
  • Author(s): ⑤大貫 仁
  • Organizer: 化学工学会
  • Place of Presentation: 九州大学
  • Year and Date: 2014-09-17 – 2014-09-18
  • Invited
• [Patent(Industrial Property Rights)] Ru膜成膜装置、金属性膜装置、Ruバリアメタル層、配線構造 (2016)
  • Inventor(s): 永野隆敏、大貫 仁、篠嶋 妥、玉橋邦裕、小沼重春
  • Industrial Property Rights Holder: 永野隆敏、大貫 仁、篠嶋 妥、玉橋邦裕、小沼重春
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-086074
  • Filing Date: 2016-04-22
• [Patent(Industrial Property Rights)] 超低抵抗率銅配線を有する半導体集積回路装置 (2015)
  • Inventor(s): 篠嶋 妥、 大貫 仁、永野隆敏
  • Industrial Property Rights Holder: 篠嶋 妥、 大貫 仁、永野隆敏
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2015-038589
  • Filing Date: 2015-02-27