Formation technology development of high quality Ge/Si heterostructures using hydrogen radical
Project/Area Number |
25390065
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
|
Research Institution | University of Yamanashi |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
YAMANAKA JUNJI 山梨大学, 大学院総合研究部, 准教授 (20293441)
SATO TETSUYA 山梨大学, 大学院総合研究部, 准教授 (60252011)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | GeSiヘテロ構造 / ラジカル水素加熱 / GeチャネルFET / Ge/Siヘテロ構造 / Ge/Si基板ヘテロ構造 / 水素ラジカル加熱 |
Outline of Final Research Achievements |
300nm thick Ge layers were grown on Si(100) substrates at 300 °C using an MBE apparatus and single-crystal Ge/Si heterostructures were formed. Dislocations originated from the lattice mismatch between Ge and Si were observed by a transmission electron microscope. 100nm thick SiO2 films were deposited at 300 °C with by CVD method on the heterostructures, and 100nm thick W films, which act as a heat source during hydrogen radical irradiation, deposited on the top by a RF sputter apparatus. Transmission electron microscope observations have revealed that mixing of Ge and Si layers didn’t occur by 700 or 800°C for around 0.2 second heating using hydrogen radical heating. We have fabricated p-MOSFETs on the Ge/Si(100) heterostructures and confirmed the high device performance with the effective hole mobility of 380cm2/Vs.
|
Report
(4 results)
Research Products
(20 results)
-
[Journal Article] Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices2016
Author(s)
Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu
-
Journal Title
Journal of Materials Science and Chemical Engineering
Volume: 4
Issue: 01
Pages: 29-33
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-