| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Outline of Final Research Achievements |
300nm thick Ge layers were grown on Si(100) substrates at 300 °C using an MBE apparatus and single-crystal Ge/Si heterostructures were formed. Dislocations originated from the lattice mismatch between Ge and Si were observed by a transmission electron microscope. 100nm thick SiO2 films were deposited at 300 °C with by CVD method on the heterostructures, and 100nm thick W films, which act as a heat source during hydrogen radical irradiation, deposited on the top by a RF sputter apparatus. Transmission electron microscope observations have revealed that mixing of Ge and Si layers didn’t occur by 700 or 800°C for around 0.2 second heating using hydrogen radical heating. We have fabricated p-MOSFETs on the Ge/Si(100) heterostructures and confirmed the high device performance with the effective hole mobility of 380cm2/Vs.
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