| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
Organic semiconductors have the potential to low cost fabrication owing to lower temperature processing. Organic semiconductor thin-film device (OTFT) has a mobility corresponding to amorphous Si devices. Application to electric papers and display devices is strongly expected. In this study, we have fabricated OTFTs with pentacene as a channel layer and CYOP film as a charge trapping layer for the purpose of memory function. Data storing is performed by negative stress for the gate electrode. The threshold voltage shift of 1.4 V was observed. positive bias stress induced the recovery of threshold voltage. In future, n-type OTFT memory will be fabricated to obtain complementary device operation.
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