Fabrication of organic semiconductor memory and application to neural network circuit
Project/Area Number |
25420310
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Muroran Institute of Technology |
Principal Investigator |
FUKUDA Hisashi 室蘭工業大学, 工学(系)研究科(研究院), 教授 (10261380)
|
Co-Investigator(Kenkyū-buntansha) |
TADA Yoshihiro 室蘭工業大学, 工学研究科, 助教 (30637202)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
Keywords | ナノテクノロジー / 有機半導体 / ナノデバイス / 有機薄膜 |
Outline of Final Research Achievements |
Organic semiconductors have the potential to low cost fabrication owing to lower temperature processing. Organic semiconductor thin-film device (OTFT) has a mobility corresponding to amorphous Si devices. Application to electric papers and display devices is strongly expected. In this study, we have fabricated OTFTs with pentacene as a channel layer and CYOP film as a charge trapping layer for the purpose of memory function. Data storing is performed by negative stress for the gate electrode. The threshold voltage shift of 1.4 V was observed. positive bias stress induced the recovery of threshold voltage. In future, n-type OTFT memory will be fabricated to obtain complementary device operation.
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Report
(4 results)
Research Products
(8 results)