| Project/Area Number |
25420349
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Imura Masataka 国立研究開発法人物質・材料研究機構, 環境エネルギー材料部門, 主任研究員 (80465971)
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| Co-Investigator(Renkei-kenkyūsha) |
KOIDE Yasuo 国立研究開発法人 物質・材料研究機構, 環境エネルギー材料部門, グループリーダー (70195650)
AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | ダイヤモンド / 電界効果トランジスタ / MOSFET / ゲート絶縁膜 / 原子層体積成長法 / 電子デバイス / パワーデバイス / スパッタ法 / 電子デバイス・電子機器 / 高周波パワーデバイス / ノーマリオフ型 / 窒化アルミニウム / 酸化アルミニウム / 酸化ジルコニウム / ヘテロ接合 / 酸化ハフニウム |
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| Outline of Final Research Achievements |
Diamond is promising wide-gap semiconductor for the power devices operated under the hash environment owing to its excellent material property. In this study, we investigated the impact of formation method of hole carrier at the diamond surface and the device process condition of field-effect transistor on the normally-on and -off operation to discuss the normally-off operation mechanism. Based on the results, we optimized the gate material and structure. Finally, we reproducibly obtained the high on current (-100 to -200 A/mm) for normally-off FET devices.
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