Energy Saving Normally-off p-Channel Diamond FET with High-Current Operation

• Project/Area Number: 25420349
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: Imura Masataka 国立研究開発法人物質・材料研究機構, 環境エネルギー材料部門, 主任研究員 (80465971)
• Co-Investigator(Renkei-kenkyūsha): KOIDE Yasuo 国立研究開発法人 物質・材料研究機構, 環境エネルギー材料部門, グループリーダー (70195650) ; AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2013: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
• Keywords: ダイヤモンド / 電界効果トランジスタ / MOSFET / ゲート絶縁膜 / 原子層体積成長法 / 電子デバイス / パワーデバイス / スパッタ法 / 電子デバイス・電子機器 / 高周波パワーデバイス / ノーマリオフ型 / 窒化アルミニウム / 酸化アルミニウム / 酸化ジルコニウム / ヘテロ接合 / 酸化ハフニウム

Outline of Final Research Achievements

Diamond is promising wide-gap semiconductor for the power devices operated under the hash environment owing to its excellent material property. In this study, we investigated the impact of formation method of hole carrier at the diamond surface and the device process condition of field-effect transistor on the normally-on and -off operation to discuss the normally-off operation mechanism. Based on the results, we optimized the gate material and structure. Finally, we reproducibly obtained the high on current (-100 to -200 A/mm) for normally-off FET devices.

Research Products

• [Journal Article] Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer (2015)
  • Author(s): R. G. Banal, M. Imura, and Y. Koide
  • Journal Title: Aip Advances Volume: 5 Issue: 9 Pages: 0971431-8
  • DOI: 10.1063/1.4931159
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Impedance analysis of Al2O3/H-terminated diamond MOS structures (2015)
  • Author(s): M.Y. Liao, J.W. Liu, L. W. Sang. D. Coatchup, J. L. Li, M. Imura, Y. Koide, H. Ye
  • Journal Title: Appl.Phys. Lett Volume: 106 Issue: 8 Pages: 083506-083506
  • DOI: 10.1063/1.4913597
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors (2015)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 11 Pages: 1157041-6
  • DOI: 10.1063/1.4930294
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond (2015)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Diamond and Related Materials Volume: 54 Pages: 55-58
  • DOI: 10.1016/j.diamond.2014.10.004
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric (2014)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, A. Tanaka, H. Iwai, and Y. Koide
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 6395-1
  • DOI: 10.1038/srep06395
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material (2014)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
  • Journal Title: Journal of Physics D Volume: 47 Issue: 24 Pages: 245102-15
  • DOI: 10.1088/0022-3727/47/24/245102
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor (2014)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 8 Pages: 082110-14
  • DOI: 10.1063/1.4894291
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide
  • Journal Title: J. Appl. Phys. Volume: 114 Issue: 8 Pages: 841081-7
  • DOI: 10.1063/1.4819108
  • Peer Reviewed
• [Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 11 Pages: 1129101-4
  • DOI: 10.1063/1.4798289
  • Peer Reviewed
• [Journal Article] Normally-off HfO2-gated diamond field effect transistors (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Journal Title: Appl. Phys. Lett. Volume: 103 Issue: 9 Pages: 929051-3
  • DOI: 10.1063/1.4820143
  • Peer Reviewed
• [Journal Article] ダイヤモンドを用いた光・電子デバイスの開発 (2013)
  • Author(s): 小出康夫、廖梅勇、井村将隆
  • Journal Title: スマートプロセス学会誌 Volume: 2 Pages: 224-229
  • NAID: 10031200069
  • Peer Reviewed
• [Presentation] 半導体の基礎II:窒化物半導体を用いた光・電子デバイス (2015)
  • Author(s): 井村将隆
  • Organizer: ソディック－未踏科学技術協会 企業内セミナー(招待講演)
  • Place of Presentation: ソディック株式会社
  • Year and Date: 2015-11-24
  • Invited
• [Presentation] AlN/ダイヤモンド及びダイヤモンド/AlN/サファイア上のヘテロエピタキシャル成長 (2015)
  • Author(s): 井村将隆、R.G.Banal、劉江偉、廖梅勇、小出康夫
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス
  • Year and Date: 2015-11-17
• [Presentation] Control of normally-on/off in hydrogenated-diamond MISFET (2015)
  • Author(s): 劉江偉、廖梅勇、井村将隆、小出康夫
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス
  • Year and Date: 2015-11-17
• [Presentation] Effect of Boron incorporation on the structural quality of AlBN layer s grown by MOVPE (2015)
  • Author(s): M. Imura, Y. Ota, R. G. Banal, and Y. Koide
  • Organizer: The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
  • Place of Presentation: Act City, Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate (2015)
  • Author(s): R. G. Banal, M. Imura, and Y. Koide
  • Organizer: The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
  • Place of Presentation: Act City, Hamamatsu, Japan
  • Year and Date: 2015-11-08
  • Int'l Joint Research
• [Presentation] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET (2015)
  • Author(s): R.G.Banal、井村将隆、劉江偉、小出康夫
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-13
• [Presentation] ZrO2 on hydrogenated-diamond: breakdown electric field interfacial band configuration and gate-drain distance scaling effect for electrical property of MISFET (2015)
  • Author(s): 劉江偉、M.Y.Liao、井村将隆、小出康夫
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-13
• [Presentation] Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs (2015)
  • Author(s): Y. Koide, M. Imura, J. W. Liu, M. Y. Liao, R. G. Banal, T. Matsumoto, N. Shibata, and Y. Ikuhara
  • Organizer: 26th International Conference on Diamond and Carbon Materials (ICDCM2015)
  • Place of Presentation: Bad Homburg, Germany
  • Year and Date: 2015-09-06
  • Int'l Joint Research
• [Presentation] Impedance Spectroscopy of Diamond MOS Structure (2015)
  • Author(s): . Y. Liao, J. W. Liu, S. Liwen, D. Coatchup, J. L. Li, M. Imura, H. Ye, and Y. Koide
  • Organizer: 9th International Conference on New Diamond and Nano Carbons (NDNC2015)
  • Place of Presentation: Shizuoka Granship, Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] Hydrogenated-diamond MISFET logic inverter (2015)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: 9th International Conference on New Diamond and Nano Carbons (NDNC2015)
  • Place of Presentation: Shizuoka Granship, Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: The 4th Annual World Congress of Nano-S&T
  • Place of Presentation: Qingdao, Qingdao, China.
  • Year and Date: 2014-10-29 – 2014-10-30
• [Presentation] AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察と電気的特性評価 (2014)
  • Author(s): 井村将隆、劉江偉、廖梅勇、小出康夫、松元隆夫、柴田直哉、幾原雄一
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス.
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] ウェットアニールダイヤモンド(111)上 ALD-Al2O3 膜を用いたMOS キャパシタ の電気的特性 (2014)
  • Author(s): 上田諒浩、宮田大輔、徳田規夫、井村将隆、小出康夫、小倉政彦、山崎聡、猪熊孝夫
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス.
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor (2014)
  • Author(s): 劉江偉、M.Y.Liao、井村将隆、小出康夫
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス.
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発 (2014)
  • Author(s): 小出康夫、井村将隆、劉江偉、M.Y.Liao
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス.
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X- ray Photoelectron Spectroscopy (2014)
  • Author(s): M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
  • Organizer: International Conference on Solid State Devices and Materials 2014 (SSDM2014)
  • Place of Presentation: Epochal Tsukuba, Tsukuba, Japan.
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: International Conference on Diamond and Carbon Materials (ICDCM2014)
  • Place of Presentation: Melia Castilla, Madrid, Spain.
  • Year and Date: 2014-09-07 – 2014-09-11
• [Presentation] Atomically controlled diamond surfaces and interfaces (2014)
  • Author(s): N. Tokuda, D. Miyata, A. Ueda, T. Chonan, T. Minamiyama, T. Inokuma, M. Imura, Y. Koide, M. Ogura, T. Makino, D. Takeuchi, and S. Yamsaki
  • Organizer: 25th International Conference on Diamond and Carbon Materials
  • Place of Presentation: Melia Castilla, Madrid, Spain., (2014),
  • Year and Date: 2014-09-07 – 2014-09-11
  • Invited
• [Presentation] Recent progress of field effect transistors by AlN/Diamond Heterostructure (2014)
  • Author(s): M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
  • Organizer: The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
  • Place of Presentation: Fukuoka University, Fukuoka, Japan.
  • Year and Date: 2014-08-24 – 2014-08-30
  • Invited
• [Presentation] HfO2 on hydrogenated-diamond for field effect transistors (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
  • Place of Presentation: Fukuoka University, Fukuoka, Japan.
  • Year and Date: 2014-08-24 – 2014-08-30
• [Presentation] X線光電子分光法によるAlN/(111)ダイヤモンドヘテロ接合のエネルギーバンド オフセット評価 (2014)
  • Author(s): 井村将隆、田中彰博、岩井秀夫、劉江偉、廖梅勇、小出康夫
  • Organizer: 第33回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺
  • Year and Date: 2014-07-07 – 2014-07-09
• [Presentation] Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 gases (2014)
  • Author(s): M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
  • Organizer: 14th International Conference on Atomic Layer Deposition (ALD2014)
  • Place of Presentation: Hotel Granvia Kyoto, Kyoto, Japan.
  • Year and Date: 2014-06-15 – 2014-06-18
• [Presentation] “Diamond metal-insulator-semiconductor field effect transistor logic inverters (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum (SCDE 2014)
  • Place of Presentation: Xian China high-speed Le Grand Large Hotel, Xian, China.
  • Year and Date: 2014-06-12 – 2014-06-17
• [Presentation] Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces (2014)
  • Author(s): Y. Koide, J. Liu, M. Y. Liao, M. Imura, H. Oosato, and E. Watanabe
  • Organizer: New Diamond and Nano Carbons Conference (NDNC 2014)
  • Place of Presentation: Hyatt Regency Chicago, Chicago, Illinois, USA,
  • Year and Date: 2014-05-25 – 2014-05-29
• [Presentation] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano Carbons Conference (NDNC 2014)
  • Place of Presentation: Hyatt Regency Chicago, Chicago, Illinois, USA,
  • Year and Date: 2014-05-25 – 2014-05-29
• [Presentation] Fabrication of low on-resistance diamond field effect transistors (2014)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano Carbons Conference (NDNC 2014)
  • Place of Presentation: Hyatt Regency Chicago, Chicago, Illinois, USA,
  • Year and Date: 2014-05-25 – 2014-05-29
• [Presentation] MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化 (2014)
  • Author(s): 井村将隆、劉江偉、廖梅勇、小出康夫
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Al2O3 および HfO2/水素終端ダイヤモンド界面の周波数分散特性 (2014)
  • Author(s): 小出康夫、劉江偉、M.Y.Liao、井村将隆、大里啓孝、渡辺英一郎、津谷大樹
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Normally-off HfO2/diamond field effect transistors fabrication (2014)
  • Author(s): 劉江偉、M.Y.Liao、井村将隆、小出康夫
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors (2013)
  • Author(s): M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
  • Organizer: NIMS Confrence 2013
  • Place of Presentation: Epochal Tsukuba, Japan.
• [Presentation] Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen and ammonia atmosphere (2013)
  • Author(s): M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. W. Liu, M. Y. Liao, and Y. Koide
  • Organizer: International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
  • Place of Presentation: Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
• [Presentation] Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors (2013)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
  • Place of Presentation: Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
• [Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes (2013)
  • Author(s): J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano carbon conference (NDNC2013)
  • Place of Presentation: National University, Singapore.
• [Presentation] nterfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy (2013)
  • Author(s): J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano carbon conference (NDNC2013)
  • Place of Presentation: National University, Singapore.
• [Presentation] Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors (2013)
  • Author(s): J. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: NIMS conference 2013
  • Place of Presentation: Epochal Tsukuba, Japan
• [Presentation] AlN/ダイヤモンドヘテロ接合を用いた電子デバイス (2013)
  • Author(s): 井村将隆、廖梅勇、小出康夫
  • Organizer: 第43回結晶成長国内会議
  • Place of Presentation: 長野市生涯学習センター
  • Invited
• [Presentation] HfO2/diamond電界効果トランジスタの作成 (2013)
  • Author(s): 劉江偉、M.Y.Liao、井村将隆、小出康夫
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学
• [Presentation] HfO2/Hydrogenated-diamond field effect transistors for power devices (2013)
  • Author(s): 劉江偉、M.Y.Liao、井村将隆、小出康夫
  • Organizer: 第13回 NIMSフォーラム
  • Place of Presentation: 東京国際フォーラム
• [Presentation] AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ (2013)
  • Author(s): 小出康夫、廖梅勇、井村将隆
  • Organizer: 応用物理学会応用電子物性分科会研究例会
  • Place of Presentation: 金沢工業大学大学院虎ノ門キャンパス
  • Invited