| Project/Area Number |
25600046
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Nanomaterials engineering
|
|---|
| Research Institution | Tokyo Metropolitan University |
|---|
Principal Investigator |
YANAGI Kazuhiro 首都大学東京, 理工学研究科, 准教授 (30415757)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
TAKENOBU Taishi 早稲田大学, 先進理工学部, 教授 (70343035)
|
|---|
| Project Period (FY) |
2013-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Keywords | 単層カーボンナノチューブ / 半導体型 / 伸縮性デバイス / 電界効果デバイス / 電気化学 / イオン液体・ゲル / 電気二重層 / 金属型 / トランジスタ / イオンゲル・液体 |
|---|
| Outline of Final Research Achievements |
In this study, we have produced strechable field effect transistor devices using high-purity semiconducting single wall carbon nanotubes (s-SWCNT) and ionic gels through electryte gating approaches. We investigated the development of transfer techniques of s-SWCNT thin films on PDMS substrates, and evaluated the strechablitiy of channels and ionic gels. As a result, we succeeded to produce strechable electric devices in which both on/off ratio and mobility did not degrade even when the devices were streched to 19 %.
|
