Development of a large-area, highly-sensitive, flexible pressure sensor based on metal/organic-semiconductor interfaces
| Project/Area Number |
25600078
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
NOUCHI Ryo 大阪府立大学, 21世紀科学研究機構, 講師 (70452406)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 圧力センサ / 電荷注入障壁 / 有機半導体 / 電極仕事関数 / 自己組織化単分子膜 / 分子スイッチ / プッシュバック効果 / 双極子効果 |
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| Outline of Final Research Achievements |
Reversible switching of electrical characteristics of electrode/organic-semiconductor/electrode structures was investigated using Au electrodes modified with self-assembled monolayers (SAMs). By systematically changing the structure of the SAM molecules, the push-back effect of the bonding group was found to show the largest contribution to the switching behavior. In addition, by theoretically analyzing the electrical characteristics of the electrode/semiconductor/electrode structures, various parameters such as charge-injection barriers at the two electrode/semiconductor interfaces were found to be extracted from a single current-voltage curve obtained experimentally. The switching behavior treated in this study is expected to be applied for a highly sensitive pressure sensor detecting an external mechanical force.
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Report
(3 results)
Research Products
(6 results)
