| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
|
|---|
| Outline of Final Research Achievements |
Since semiconductor integrated circuit technology has been approaching the scaling limit of devices, novel device structures with ultralow power consumption are required. In this research, we focus on Germanium (Ge) as a novel material, and with the aim of opening possibilities of Ge we developed technologies toward strained Ge single hole devices enabling spin control with very low power consumptions. Particularly, with utilizing technologies of high quality crystal growth and formation of gate insulators, a Ge channel two-dimensional-hole-gases were created on Si substrates, and we found that the top-gating was able to control the transport and spin properties, allowing in-plane local depletion of holes, which are highly important for realization of Ge dot devices.
|
