Quantum Dot Single Hole Device based on Strained Germanium Two Dimensional Hole Gas

• Project/Area Number: 25600079
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Applied materials
• Research Institution: Tokyo City University
• Principal Investigator: Sawano Kentarou 東京都市大学, 工学部, 教授 (90409376)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
• Keywords: ゲルマニウム / 量子ドット / 歪みゲルマニウム / 2次元正孔ガス / 高移動度 / 歪みGe / 単正孔デバイス

Outline of Final Research Achievements

Since semiconductor integrated circuit technology has been approaching the scaling limit of devices, novel device structures with ultralow power consumption are required. In this research, we focus on Germanium (Ge) as a novel material, and with the aim of opening possibilities of Ge we developed technologies toward strained Ge single hole devices enabling spin control with very low power consumptions. Particularly, with utilizing technologies of high quality crystal growth and formation of gate insulators, a Ge channel two-dimensional-hole-gases were created on Si substrates, and we found that the top-gating was able to control the transport and spin properties, allowing in-plane local depletion of holes, which are highly important for realization of Ge dot devices.

Research Products

• [Journal Article] Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates (2016)
  • Author(s): Yusuke Hoshi, You Arisawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Noritaka Usami
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 3 Pages: 031302-031302
  • DOI: 10.7567/jjap.55.031302
  • NAID: 210000146127
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon (2016)
  • Author(s): M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 3 Pages: 031304-031304
  • DOI: 10.7567/jjap.55.031304
  • NAID: 210000146129
  • Peer Reviewed
• [Journal Article] Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator (2015)
  • Author(s): K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki
  • Journal Title: Thin Solid Films Volume: 未定 Pages: 24-28
  • DOI: 10.1016/j.tsf.2015.11.020
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion (2015)
  • Author(s): Xuejun Xu, Xiaoxin Wang, Keisuke Nishida, Koki Takabayashi, Kentarou Sawano, Yasuhiro Shiraki, Haofeng Li, Jifeng Liu, and Takuya Maruizumi
  • Journal Title: Applied Physics Express Volume: 8 Issue: 9 Pages: 092101-092101
  • DOI: 10.7567/apex.8.092101
  • NAID: 210000137638
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium (2015)
  • Author(s): Michihiro Yamada, Kentarou Sawano, Masashi Uematsu and Kohei M. Itoh
  • Journal Title: Appl. Phys. Lett. Volume: 107 Issue: 13 Pages: 132101-132101
  • DOI: 10.1063/1.4931939
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates (2014)
  • Author(s): K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakagawa, Y. Shiraki
  • Journal Title: Journal of Crystal Growth Volume: 401 Pages: 758-761
  • DOI: 10.1016/j.jcrysgro.2014.02.014
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer (2014)
  • Author(s): K. Sawano, Y. Hoshi, S. Endo, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, S. Yamada, K. Hamaya, M. Miyao and Y. Shiraki
  • Journal Title: Thin Solid Films Volume: 557 Pages: 76-79
  • DOI: 10.1016/j.tsf.2013.10.074
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy (2014)
  • Author(s): Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
  • Journal Title: Thin Solid Films Volume: 557 Pages: 66-69
  • DOI: 10.1016/j.tsf.2013.10.082
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well (2014)
  • Author(s): Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, and Tomoki Machida
  • Journal Title: Physical Review Letters Volume: 113 Issue: 8 Pages: 086601-086601
  • DOI: 10.1103/physrevlett.113.086601
  • NAID: 120007044497
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique (2013)
  • Author(s): K. Sawano
  • Journal Title: Journal of Crystal Growth Volume: - Pages: 251-253
  • DOI: 10.1016/j.jcrysgro.2012.12.100
  • Peer Reviewed
• [Journal Article] Room-temperature sign reversed spin-accumulation signals in Si using an atomically smooth Fe_3Si/Si(111) interface (2013)
  • Author(s): Y. Fujita, S. Yamada. Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya
  • Journal Title: Journal of Applied Physics Volume: 113 Issue: 1
  • DOI: 10.1063/1.4773072
  • Peer Reviewed
• [Journal Article] An ultra-thin buffer layer for Ge epitaxial layers on Si (2013)
  • Author(s): M. Kawano, S. Yamada. K. Tanikawa, K. Sawano, M. Miyao, and K. Hamaya
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 12
  • DOI: 10.1063/1.4798659
  • Peer Reviewed
• [Journal Article] Qualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe_3Si/n^+-Ge Schottky-tunnel contacts (2013)
  • Author(s): K. Hamaya, Y. Baba, G Takemoto, K. Kasahara, S. Yamada, K. Sawano, and M. Miyao
  • Journal Title: Journal of Applied Physics Volume: 113 Issue: 18
  • DOI: 10.1063/1.4804320
  • Peer Reviewed
• [Journal Article] Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates (2013)
  • Author(s): Keisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
  • Journal Title: J. Cryst. Growth Volume: 378 Pages: 212-217
  • DOI: 10.1016/j.jcrysgro.2012.12.152
  • Peer Reviewed
• [Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy (2013)
  • Author(s): Keisuke Arimoto
  • Journal Title: Journal of Crystal Growth Volume: 362 Pages: 276-281
  • DOI: 10.1016/j.jcrysgro.2011.12.084
  • Peer Reviewed
• [Presentation] Strained Germanium based Nano-Structures toward High Performance Optoelectronic Integrated Circuits (2015)
  • Author(s): Kentarou Sawano
  • Organizer: International Symposium for Advanced Materials Research 2015
  • Place of Presentation: Nantou, Taiwan
  • Year and Date: 2015-08-16
  • Int'l Joint Research / Invited
• [Presentation] Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Ge/SiGe Quantum Well (2015)
  • Author(s): Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Takaaki Koga, and Tomoki Machida
  • Organizer: 21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21)
  • Place of Presentation: Sendai International Center, Miyagi
  • Year and Date: 2015-07-26
  • Int'l Joint Research
• [Presentation] Robust quantum dot devices for qubits in isotopically purified 28Si (2015)
  • Author(s): Christian Neumann, Johannes Kierig, Florian Forster, Andreas Wild, J. W. Ager, E. E. Haller, Gerhard Abstreiter, Kentarou Sawano, Stefan Ludwig, and Dominique Bougeard
  • Organizer: 21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21)
  • Place of Presentation: Sendai International Center, Miyagi
  • Year and Date: 2015-07-26
  • Int'l Joint Research
• [Presentation] Fabrication of Strained Ge-on-Insulator for Ge-based Optoelectronic Devices (2015)
  • Author(s): K. Sawano, T. Nagashima, H. Hashimoto, X. Xu, K. Hamaya, and T. Maruizumi
  • Organizer: E-MRS 2015 Spring Meeting
  • Place of Presentation: Lille, France
  • Year and Date: 2015-05-11
  • Int'l Joint Research
• [Presentation] Anisotropic Strain Engineering in Si/Ge Heterostructures (2014)
  • Author(s): Kentarou Sawano
  • Organizer: The Collaborative Conference on Crystal Growth (3CG 2014)
  • Place of Presentation: Phuket, Thailand
  • Year and Date: 2014-11-04 – 2014-11-07
  • Invited
• [Presentation] Electrical properties of strained Ge(111)-on-Insulator (GOI) fabricated by Ge epitaxy on Si and layer transfer (2014)
  • Author(s): Tomonori Nagashima, Hironori Katsumata, Kohei Hamaya, Masanobu Miyao, Yasuhiro Shiraki, Kentarou Sawano
  • Organizer: 7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM
  • Place of Presentation: Singapore
  • Year and Date: 2014-06-02 – 2014-06-04
• [Presentation] Strain engineered Si/Ge heterostructures (2013)
  • Author(s): K. Sawano
  • Organizer: The International Conference on Small Science (ICSS 2013)
  • Place of Presentation: Las Vegas, USA
  • Invited
• [Presentation] Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates (2013)
  • Author(s): K. Sawano, Y. Shoji, N. Funabashi, E. Yonekura, K. Nakagawa, Y. Shiraki
  • Organizer: 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
  • Place of Presentation: Warsaw, Poland
• [Presentation] Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer (2013)
  • Author(s): K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
  • Organizer: The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Formation of Uniaxially Strained Ge by Selective Ion Implantation (2013)
  • Author(s): K. Sawano, Y. Shoji, E. Yonekura, K. Nakagawa, and Y. Shiraki
  • Organizer: E-MRS 2013 Spring Meeting
  • Place of Presentation: Strasbourg, France