| Project/Area Number |
25600125
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Plasma electronics
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
Himura Haruhiko 京都工芸繊維大学, 電気電子工学系, 准教授 (30311632)
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| Co-Investigator(Kenkyū-buntansha) |
SANPEI AKIO 京都工芸繊維大学, 電気電子工学系, 講師 (90379066)
HASUIKE NORIYUKI 京都工芸繊維大学, 電気電子工学系, 助教 (40452370)
MASAMUNE SADAO 京都工芸繊維大学, 電気電子工学系, 教授 (00157182)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | プラズマプロセス / 酸化亜鉛薄膜 / 酢酸亜鉛 / ジエチル亜鉛 / 酸素負イオン / 酸素アニオンラジカル / プラズマエレクトロニクス / 酸化亜鉛 / 酸素ラジカル / RFプラズマ / 低温プロセス / ZnO / ZnO薄膜 |
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| Outline of Final Research Achievements |
A feasibility of a zinc oxide (ZnO) plasma process at lower temperature using oxygen anion radical (O-) is studied experimentally. A pulsed 13.56 MHz inductively coupled plasma discharge have been applied to generate O-. The O- density measured by a probe-assisted laser photo-detachment method is about 1010 per cubic centimeters. To investigate the effect of O- on forming ZnO thin films, we have changed the bias voltage (Vb) of the substrate stage. However, resistivity seem to still depend on the process temperature, rather than Vb. These results may be attributed to the large amount of oxygen radical (O*). In fact, the density of O* can be estimated to be three orders of magnitude greater than the O- density. Another new experiment in which the effect of O* is completely eliminated is thus required.
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