| Project/Area Number |
25630118
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
FUKUSHIMA Takafumi 東北大学, 未来科学技術共同研究センター, 准教授 (10374969)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MARIAPPAN Murugesan 東北大学, 未来科学技術共同研究センター, 産学官連携研究員 (10509699)
BEA Jichel 東北大学, 未来科学技術共同研究センター, 助教 (40509874)
|
|---|
| Project Period (FY) |
2013-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
|---|
| Keywords | 気相堆積重合 / ポリイミド / TSV / ＴＳＶ |
|---|
| Outline of Final Research Achievements |
A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic polyimide is conformably deposited along the side wall of the TSV. Compared to ALD, the thickness controllability is not so high, but relatively high thickness control with a resolution of 10 nm in thickness is realized. The deposition rate is approximately 100-200nm/min. The step-coverage is approximately 80% for high-aspect-ratio TSV with the depth of 50 um and the diameter of 5 um, and the resulting polyimide thin layer is very pure and shows high thermal stability. As-grown polymer was evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner with organic polymer greatly helps in suppressing the thermo-mechanical stress.
|
