• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Challenge to a product of dark material made by a silicon carbide

Research Project

Project/Area Number 25630119
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionYamagata University

Principal Investigator

NARITA Yuzuru  山形大学, 理工学研究科, 助教 (30396543)

Project Period (FY) 2013-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords炭化ケイ素 / 反射率 / 透過率 / 赤外光 / 紫外-可視光 / 黒体 / 紫外‐可視光 / 立方晶炭化ケイ素 / ダークマテリアル
Outline of Final Research Achievements

Because a refractive index of cubic silicon carbide (3C-SiC) is relatively high and a reflectance of SiC is about 20%, SiC cannot become the dark material which is near to a perfectly black body. In this study, we challenged a product of dark material made by the SiC films. The polycrystalline SiC film that the surface was black was deposited by chemical vapor deposition using organosilane gas. By optimizing the conditions of SiC growth, we succeeded in the development of polycrystalline SiC film with a low-reflectance of about 6% in an ultraviolet, visible, and near-infrared light range.

Report

(3 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • Research Products

    (2 results)

All 2015 2014

All Presentation (2 results)

  • [Presentation] 自然酸化膜付Si基板上へのモノメチルシランを用いたSiC薄膜高速成長(II)2015

    • Author(s)
      山田晋平,成田 克,中島健介,内藤正路,末光眞希
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 自然酸化膜付Si 基板上へのモノメチルシランを用いたSiC薄膜高速成長2014

    • Author(s)
      成田 克,山田晋平,高野昌伸,早尾貴史,中島健介,末光眞希
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report

URL: 

Published: 2014-07-25   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi