Dopant-atom-controlled tunnel diodes using Si nano-pn junctions
Project/Area Number |
25630144
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
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Research Institution | Shizuoka University |
Principal Investigator |
TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
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Co-Investigator(Kenkyū-buntansha) |
MIZUTA Hiroshi 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
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Project Period (FY) |
2013-04-01 – 2015-03-31
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Project Status |
Completed (Fiscal Year 2014)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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Keywords | 電子デバイス・機器 / シリコンナノpn接合 / ドーパント原子 / トンネルダイオード / 高濃度ドーピング |
Outline of Final Research Achievements |
The purpose of this research was to realize dopant-atom-based tunneling diodes using deep level donor-acceptor resonance as a new functional pn diode. In 2014 FY, we found that diffusion current of nano-pn-diodes showed random telegraph signal (RTS), which is ascribed to dopant charging and discharging phenomena (APL(2014). In 2015 FY, we found sharp current peaks due to resonance via dopant atoms. This finding successfully satisfies the goal of this research plan (to be presented in Si Nanoelectronics Workshop 2015).
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Report
(3 results)
Research Products
(74 results)
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[Presentation] Effect of Individual Dopants in Esaki Tunneling Diodes2015
Author(s)
Hoang Nhat Tan, Daniel Moraru, Ryosuke Unno, Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti,Le The Anh, Muruganathan Manoharan,Takeshi Mizuno, Hiroshi Mizuta, Djoko Hartanto, Michiharu Tabe
Organizer
2015年 第62回応用物理学会春季学術講演会
Place of Presentation
東海大学湘南キャンパス(神奈川県・平塚市)
Year and Date
2015-03-12
Related Report
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[Presentation] Transport Phenomena in Nanoscale Silicon Tunneling pn Diodes2014
Author(s)
Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti, Hoang Nhat Tan, Ryosuke Unno, Daniel Moraru,Takeshi Mizuno, Arief Udhiarto, Djoko Hartanto, Michiharu Tabe
Organizer
The 2nd International Conference on Nano Electronics Research and Education (ICNERE2014)
Place of Presentation
静岡大学浜松キャンパス(静岡県・浜松市)
Year and Date
2014-11-24
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[Presentation] Dopant-Atom-Based Tunnel SOI-MOSFETs
Author(s)
Michiharu Tabe, Daniel Moraru, Earfan Hamid, Arup Samanta, Le The Anh, Takeshi Mizuno, Hiroshi Mizuta
Organizer
224th ECS Meeting
Place of Presentation
The Hilton San Francisco Hotel (USA)
Related Report
Invited
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[Presentation] Dopant atom devices based on Si nanostructures
Author(s)
Michiharu Tabe, Daniel Moraru, Earfan Hamid, Arup Samanta, Le The Anh, Takeshi Mizuno, Hiroshi Mizuta
Organizer
7th International WorkShop on New Group IV Semiconductor Nanoelectronics
Place of Presentation
東北大学(仙台市)
Related Report
Invited
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[Presentation] ドナー原子トランジスタにおける電子トンネリングの高温動作
Author(s)
エルファン ハミッド, ダニエル モラル, 葛屋陽平, 水野武志, レ テ アン, 水田博, 田部道晴
Organizer
2014年 第61回応用物理学会春季学術講演会 第5回シリコンテクノロジー分科会論文賞受賞記念講演
Place of Presentation
青山学院大学相模原キャンパス(相模原市)
Related Report
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