| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2013: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
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| Outline of Final Research Achievements |
We have researched a possibility of a novel spin-polarized electron source using a two-photon absorption. A nitride semiconductor was used for the substrate of NEA-photocathode to realize high quantum efficiency, long lifetime and tiny emission spot which contributed to a beam quality such brightness and emittance. We have succeeded in development of a newly designed photocathode that consists of InGaN-GaN superlattice optimized for the two-photon absorption. Detection system for pulsed electron-beam and optical system were constructed and used for the excitation of spin-polarized electron. Experimental results indicated that two-photon absorption occurred in the fabricated photocathode. The nonlinear absorption let the emission spot smaller than that of one-photon absorption, which generates a low initial emittance. We have demonstrated that the novel photocathode with the nonlinear photo-excitation will provide a high quality electron beam and a high stability of electron emission.
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