Application research for high mobility Ge MOSFET by charge compensation at MOS interface
| Project/Area Number |
25886010
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kyushu University |
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Principal Investigator |
YAMAMOTO Keisuke 九州大学, グリーンアジア国際リーダー教育センター, 助教 (20706387)
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| Project Period (FY) |
2013-08-30 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 電気・電子材料 / 半導体物性 / MOSFET / ゲルマニウム / ULSI / 電子・電気材料 / 低消費電力 |
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| Outline of Final Research Achievements |
Performance enhancement of ultra-large-scale integration (ULSI), which means higher processing speed and low power consumption, is strongly required at modern society. In this study, we focused Ge as an alternative channel material in place of Si. Concrete research subjects for application and performance improvement are listed follows.
1) Charge compensation at MOS interface. By optimizing process condition, it is succeeded that fixed charge at MOS structure was controlled in the range from +8×10E10 to -5×10E12 cmE-2. It is expected charge compensation and mobility improvement of MOS transistor. 2) Barrier height control at metal/Ge interface. By using metal/amorphous Ge interlayer/Ge structure, we can widely controlled electron and hole barrier heights and we suggested physical mechanism model of this phenomenon.
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Report
(3 results)
Research Products
(28 results)
