| Budget Amount *help |
¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2016: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2015: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
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| Outline of Final Research Achievements |
Metal-oxide field effect transistors are the major components of integrated circuits. The performance of the transistors is known to degrade as they are stressed during the use in the integrated circuits. In this project, we measured and characterized degradation of the transistors in integrated circuits. By using the developed degradation model, the transistors that are particularly prone to be stressed are pointed out, and their individual degradations are quantitatively estimated. A circuit design methodology, which promotes the recovery of transistors, is also proposed.
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