Reliability design for lifetime prediction, failure prevention, and degradation recovery of integrated circuits
Project/Area Number |
26280014
|
Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Computer system
|
Research Institution | Kyoto University |
Principal Investigator |
Sato Takashi 京都大学, 情報学研究科, 教授 (20431992)
|
Co-Investigator(Kenkyū-buntansha) |
廣本 正之 京都大学, 情報学研究科, 助教 (60718039)
|
Project Period (FY) |
2014-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2016: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2015: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
|
Keywords | 電子デバイス / デバイス設計・製造プロセス / シミュレーション / デバイスモデル / 大規模アレイ回路 / 経時特性変化 / モデル化 |
Outline of Final Research Achievements |
Metal-oxide field effect transistors are the major components of integrated circuits. The performance of the transistors is known to degrade as they are stressed during the use in the integrated circuits. In this project, we measured and characterized degradation of the transistors in integrated circuits. By using the developed degradation model, the transistors that are particularly prone to be stressed are pointed out, and their individual degradations are quantitatively estimated. A circuit design methodology, which promotes the recovery of transistors, is also proposed.
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Report
(4 results)
Research Products
(77 results)
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[Presentation] Mitigation of NBTI-induced Timing Degradation in processor2016
Author(s)
Song Bian,Michihiro Shintani,Zheng Wang,Masayuki Hiromoto, Takashi Sato, Anupam Chattopadhyay
Organizer
International Workshop on Timing Issues in the Specification and Synthesis of Digital Systems (TAU)
Place of Presentation
Santa Rosa, CA, USA
Year and Date
2016-03-10
Related Report
Int'l Joint Research
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