| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2014: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
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| Outline of Final Research Achievements |
We clarified the fundamental structure and operation physics about the proposed memory diode having both resistive-nonvolatile-memory and rectifying characteristics which are suited for the theoretically densest cross-point array. We analyzed the origin of electron-trapping defects which contribute to the memory effect, and clarified the relationship between the electron-trap-layer structures, the fabrication methods, and the memory characteristics. As each specification, we obtained endurance characteristics of 10-to-the-power-7 on/off switching cycles and writing speeds of less than 20 microseconds which surpass those of the current flash memories. Further, we have succeeded in developing the low-temperature fabrication processes with fabrication temperatures of not more than 473 K and show the compatibility of the fabrication of the memory diode with that of metal-layer-sandwiched cross-point memory array.
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