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Research on integrated circuit system with new nano-materials for real-time big-data processing

Research Project

Project/Area Number 26289110
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionChuo University

Principal Investigator

Takeuchi Ken  中央大学, 理工学部, 教授 (80463892)

Project Period (FY) 2014-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Keywordsナノデバイス / 不揮発性メモリ / 3次元集積回路 / メモリ / 新機能材料 / 3次元LSI / 電源回路 / 低電圧動作 / 電子デバイス / データストレージ / マイクロナノデバイス / 情報システム / ハイパフォーマンスコンピューティング / ハイパフォーマンスコンピューテイング
Outline of Final Research Achievements

We have developed 3D-nano integrated circuits with new materials such as carbon nanotube and metal oxides. Especially, we made pioneering research on nano-scale non-volatile memory circuits with low programming current, high endurance and high speed switching. Moreover, we have developed memory control circuits as well as the 3D-voltage generator circuits. The research results are published in the top-ranked journals such as IEEE Journal of Solid-State Circuits.

Academic Significance and Societal Importance of the Research Achievements

本研究ではナノメートルサイズの新材料を、マクロに回路システムとして集積化する手法を提案し、実証した点で学術的意義は非常に高い。同時に本研究の成果は、サイバー空間とフィジカル空間(実空間)を融合させたSociety 5.0の社会システムを実現する上でカギとなる、エッジ・IoT端末からデータセンタのストレージサーバまで、IT機器の根幹となる基盤技術でもあり、社会への貢献のみならず、産業界(半導体業界・電機業界・IT業界・自動車業界等)への貢献も大きい。

Report

(6 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • 2014 Annual Research Report
  • Research Products

    (43 results)

All 2018 2017 2016 2015 2014

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (32 results) (of which Int'l Joint Research: 12 results,  Invited: 1 results)

  • [Journal Article] Reset-Check-Reverse-Flag Scheme on NRAM with 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory2016

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Shuhei Tanakamaru, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes and Ken Takeuchi
    • Journal Title

      IEEE J. of Solid-State Circuits

      Volume: 51 Pages: 1938-1951

    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Adaptive Comparator Bias-Current Control of 0.6 V Input Boost Converter for ReRAM Program Voltages in Low Power Embedded Applications2016

    • Author(s)
      Tomoya Ishii, Sheyang Ning, Masahiro Tanaka, Kota Tsurumi and Ken Takeuchi
    • Journal Title

      IEEE J. of Solid-State Circuits

      Volume: 51 Pages: 2389-2397

    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carbon Nanotube Memory Cell Array Program Error Analysis and Tradeoff between Reset Voltage and Verify Pulses2016

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Shogo Hachiya, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55

    • NAID

      210000146314

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 0.6-1.0 V Operation Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive2016

    • Author(s)
      Masahiro Tanaka, Shogo Hachiya, Tomoya Ishii, Sheyang Ning, Kota Tsurumi and Ken Takeuchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Memory System Architecture for the Data Centric Computing2016

    • Author(s)
      Ken Takeuchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55

    • NAID

      210000146262

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset2015

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki and Ken Takeuchi
    • Journal Title

      Solid-State Electronics

      Volume: 103 Pages: 64-72

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Design Guidelines of Storage Class Memory Based Solid-State Drives to Balance Performance, Power, Endurance and Cost2015

    • Author(s)
      Takahiro Onagi, Chao Sun and Ken Takeuchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54

    • NAID

      210000144992

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Advanced Error-Prediction LDPC with temperature compensation for Highly Reliable SSDs2015

    • Author(s)
      Tsukasa Tokutomi, Shuhei Tanakamaru, Tomoko Ogura Iwasaki and Ken Takeuchi
    • Journal Title

      Solid-State Electronics

      Volume: 111 Pages: 129-140

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigation and Improvement of Verify-program in Carbon Nanotube Based Non-volatile Memory2015

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Kazuya Shimomura, Koh Johguchi, Eisuke Yanagizawa, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 62 Pages: 2837-2844

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Array-level Stability Enhancement of 50nm AlxOy ReRAM2015

    • Author(s)
      Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa and Ken Takeuchi
    • Journal Title

      Solid-State Electronics

      Volume: 114 Pages: 1-8

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Understanding Relation Between Performance and Reliability of NAND Flash / SCM Hybrid Solid-State Drive (SSD)2015

    • Author(s)
      Shuhei Tanakamaru, Shogo Hosaka, Koh Johguchi, Hirofumi Takishita and Ken Takeuchi
    • Journal Title

      IEEE Transactions on VLSI Systems

      Volume: 99 Pages: 1-12

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Presentation] 43 % Reduced Program Time, 23 % Energy Efficient ReRAM Boost Converter with PMOS Switching Transistor and Boosted Buffer Circuit for ReRAM and NAND Flash Hybrid SSDs2018

    • Author(s)
      Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi and Ken Takeuchi
    • Organizer
      International Conference on Electronic Packageing (ICEP)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A 6.8TOPS/W Energy Efficiency, 1.5μW Power Consumption, Pulse Width Modulation Neuromorphic Circuits for Near-Data Computing with SSD2018

    • Author(s)
      Kota Tsurumi, Kenta Suzuki and Ken Takeuchi
    • Organizer
      IEEE Asian Solid-State Circuits Conference (A-SSCC)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] FET型ニューロモルフィック集積回路2018

    • Author(s)
      上村公紀, 能美奨, 鈴木健太, 竹内健
    • Organizer
      電子情報通信学会総合大会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 文字認識向けニューロモルフィック集積回路2018

    • Author(s)
      坂東昭太郎, 鶴見洸太, 鈴木健太, 竹内健
    • Organizer
      電子情報通信学会総合大会
    • Related Report
      2017 Annual Research Report
  • [Presentation] クロスバー型ReRAM向け書き込み電圧生成回路2018

    • Author(s)
      能美奨, 鈴木健太, 鶴見洸太, 竹内健
    • Organizer
      電子情報通信学会総合大会
    • Related Report
      2017 Annual Research Report
  • [Presentation] IoTローカルデバイス向けCMOSプロセスとNAND型フラッシュプロセスで構成される1.0 V動作NAND型フラッシュメモリ書き込み電圧生成回路2017

    • Author(s)
      鶴見洸太, 田中誠大, 竹内健
    • Organizer
      集積回路研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 0.6V動作ReRAM書き込み電圧生成回路における書き込みデータサイズに応じたバッファ電圧最適化手法2017

    • Author(s)
      鶴見洸太, 鈴木健太, 竹内健
    • Organizer
      LSIとシステムのワークショップ2017
    • Related Report
      2017 Annual Research Report
  • [Presentation] NAND型フラッシュメモリとReRAMで構成されるハイブリッドSSD向け低電力動作可能な昇圧回路2017

    • Author(s)
      鈴木健太, 鶴見洸太,竹内健
    • Organizer
      集積回路研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 0.6 V operation, 16 % Faster Set/Reset ReRAM Boost Converter with Adaptive Buffer Voltage for ReRAM and NAND Flash Hybrid Solid-State Drives2017

    • Author(s)
      Kota Tsurumi, Masahiro Tanaka and Ken Takeuchi
    • Organizer
      The International Symposium on Quality Electronic Design (ISQED)
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] カーボンナノチューブを用いた不揮発性メモリにおける書き換え電圧を変化させたときの耐久性評価2017

    • Author(s)
      猪瀬貴史, Tomoko Ogura iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes, 竹内健
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東京都目黒区 東京工業大学
    • Related Report
      2015 Annual Research Report
  • [Presentation] ハイブリッドSSD向け0.6V動作抵抗変化型メモリの書き込み電圧生成回路の高速化2017

    • Author(s)
      鈴木健太, 鶴見洸太, 田中誠大, 竹内健
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東京都目黒区 東京工業大学
    • Related Report
      2015 Annual Research Report
  • [Presentation] Reliability Study of Carbon Nanotube Memory after Various Cycling Conditions2016

    • Author(s)
      Takashi Inose, Tomoko Ogura Iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes and Ken Takeuchi
    • Organizer
      Silicon Nanoelectronics Workshop (SNW)
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] NRAM: high performance, highly reliable emerging memory2016

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes and Ken Takeuchi
    • Organizer
      Flash Memory Summit
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Heterogeneously Integrated Program Voltage Generator for 1.0V Operation NAND Flash with Best Mix & Match of Standard CMOS Process and NAND Flash Process2016

    • Author(s)
      Masahiro Tanaka, Kota Tsurumi, Tomoya Ishii and Ken Takeuchi
    • Organizer
      IEEE European Solid-State Circuits Conference Conference (ESSCIRC)
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] IoT向け端末に組み込まれるコンパレータ回路のバイアス電流を最適化した0.6V動作ReRAM書き込み電圧生成回路2016

    • Author(s)
      田中誠大, 石井智也, 蜂谷尚悟, 寧渉洋, 竹内健
    • Organizer
      集積回路研究会
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
  • [Presentation] ReRAM reliability characterization and improvement by machine learning2016

    • Author(s)
      Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa, Chao Sun, Shuhei Tanakamaru, Ken Takeuchi
    • Organizer
      集積回路研究会
    • Related Report
      2016 Annual Research Report
  • [Presentation] ReRAMの書き換え電圧昇圧回路の高速化2016

    • Author(s)
      鈴木健太, 田中誠大, 鶴見洸太, 竹内健
    • Organizer
      集積回路研究会
    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
  • [Presentation] カーボンナノチューブを用いた不揮発性メモリにおける書き換え電圧を変化させたときの耐久性評価2016

    • Author(s)
      猪瀬貴史, Tomoko Ogura iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes, 竹内健
    • Organizer
      応用物理学関係連合講演会
    • Related Report
      2016 Annual Research Report
  • [Presentation] ハイブリッドSSD向け0.6V動作抵抗変化型メモリの書き込み電圧生成回路の高速化2016

    • Author(s)
      鈴木健太, 鶴見洸太, 田中誠大, 竹内健
    • Organizer
      応用物理学関係連合講演会
    • Related Report
      2016 Annual Research Report
  • [Presentation] IoTデバイス向けReRAM書き込み電圧生成回路の低電圧化およびコンパレータ回路のバイアス電流最適化手法2016

    • Author(s)
      鶴見洸太,田中誠大,石井智也, 竹内健
    • Organizer
      集積回路研究会
    • Place of Presentation
      東京都港区 機械振興会館
    • Related Report
      2015 Annual Research Report
  • [Presentation] カーボンナノチューブを用いた不揮発性メモリデバイスの信頼性評価2015

    • Author(s)
      猪瀬貴史, Tomoko Ogura Iwasaki, Sheyang Ning, 竹内健
    • Organizer
      集積回路研究会
    • Place of Presentation
      京都工芸繊維大学
    • Year and Date
      2015-12-17
    • Related Report
      2014 Annual Research Report
  • [Presentation] 0.6V Operation, 26% Smaller Voltage Ripple, 9% Energy Efficient Boost Converter with Adaptively Optimized Comparator Bias-Current for ReRAM Program in Low Power IoT Embedded Applications2015

    • Author(s)
      Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Masahiro Tanaka and Ken Takeuchi
    • Organizer
      IEEE Asian Solid-State Circuits Conference
    • Place of Presentation
      Xia'men International Conference Center
    • Year and Date
      2015-11-10
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A 1.0 V Operation, 65% Faster Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive2015

    • Author(s)
      Masahiro Tanaka, Shogo Hachiya, Tomoya Ishii, Sheyang Ning and Ken Takeuchi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center
    • Year and Date
      2015-09-30
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of Carbon Nanotube Memory Cell Array Program Characteristics2015

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Eisuke Yanagizawa, Shogo Hachiya, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center
    • Year and Date
      2015-09-30
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ReRAM for Storage Class Memory Application from Memory Architecture Perspective2015

    • Author(s)
      Ken Takeuchi
    • Organizer
      5th International Workshop on Resistive Memories
    • Place of Presentation
      IMEC,Leuven,Belgium
    • Year and Date
      2015-09-25
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Machine Learning Prediction for 13× Endurance Enhancement in ReRAM SSD System2015

    • Author(s)
      Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa, Chao Sun, Shuhei Tanakamaru and Ken Takeuchi
    • Organizer
      IEEE International Memory Workshop
    • Place of Presentation
      Hyatt Regency Hotel,Monterey,CA
    • Year and Date
      2015-05-20
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 抵抗変化型メモリの書き込み特性の評価2015

    • Author(s)
      西川進, 寧渉洋, 蜂谷尚悟, 竹内健
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-13
    • Related Report
      2014 Annual Research Report
  • [Presentation] 抵抗変化型メモリ(ReRAM)の書き込み特性の評価2014

    • Author(s)
      西川進, 寧渉洋, 竹内健
    • Organizer
      集積回路研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-01
    • Related Report
      2014 Annual Research Report
  • [Presentation] Carbon nanotube(CNT)を用いた不揮発性メモリデバイスの信頼性評価2014

    • Author(s)
      柳沢英祐, 寧渉洋, 竹内健
    • Organizer
      集積回路研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-01
    • Related Report
      2014 Annual Research Report
  • [Presentation] 低電圧動作可能なReRAM向けプログラム電圧生成回路2014

    • Author(s)
      田中誠大, 石井智也, 蜂谷尚悟, 竹内健
    • Organizer
      集積回路研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-01
    • Related Report
      2014 Annual Research Report
  • [Presentation] 23% Faster Program and 40% Energy Reduction of Carbon Nanotube Non-volatile Memory with Over 10^11 Endurance2014

    • Author(s)
      Sheyang Ning, Tomoko Ogura Iwasaki, Kazuya Shimomura, Koh Johguchi, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
    • Organizer
      IEEE Symp. on VLSI Technology
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI
    • Year and Date
      2014-06-12
    • Related Report
      2014 Annual Research Report
    • Int'l Joint Research
  • [Presentation] SSDコントローラーとミドルウェアの協調設計2014

    • Author(s)
      荒川飛鳥, 孫超, 曽我あゆみ, 宮地幸祐, 竹内健
    • Organizer
      LSIとシステムのワークショップ2014
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2014-05-26
    • Related Report
      2014 Annual Research Report

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Published: 2014-04-04   Modified: 2020-03-30  

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