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Research of high sensitivity X-ray sensor for low radiation dose X-ray CT using side X-ray irradiation method

Research Project

Project/Area Number 26390104
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field General applied physics
Research InstitutionKyushu Institute of Technology

Principal Investigator

Ariyoshi Tetsuya  九州工業大学, マイクロ化総合技術センター, 助教 (60432738)

Co-Investigator(Kenkyū-buntansha) 有馬 裕  九州工業大学, マイクロ化総合技術センター, 教授 (10325582)
馬場 昭好  九州工業大学, マイクロ化総合技術センター, 准教授 (80304872)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2015: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2014: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
KeywordsX線センサー / トレンチ構造型フォトダイオード / 低被曝線量 / 半導体デバイス / X線CT / 直接変換型X線センサ / 側面X線検出
Outline of Final Research Achievements

Medical X-ray diagnosis devices such as CT scanners entails the problem of X-ray radiation dose. By improving the sensitivity of the X-ray sensors, the X-ray radiation dose can be decreased and everyone can easily use various kinds of safe X-ray diagnosis without restrictions. In this study, we propose a direct conversion type silicon X-ray sensor adopting a trench-structured photodiodes. This proposed X-ray sensor has the features of high sensitivity, high speed response, long device lifetime, low power consumption, and high energy resolution. The prototype X-ray sensor was fabricated, and this sensor demonstrated the absorbed X-ray-to-current signal conversion efficiency approaching the theoretical limit.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • 2014 Research-status Report
  • Research Products

    (2 results)

All 2017 2016

All Journal Article (1 results) (of which Peer Reviewed: 1 results,  Open Access: 1 results,  Acknowledgement Compliant: 1 results) Presentation (1 results) (of which Int'l Joint Research: 1 results)

  • [Journal Article] X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor2017

    • Author(s)
      T. Ariyoshi, S. Funaki, K. Sakamoto, A. Baba, and Y. Arima
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 4S Pages: 04CH06-04CH06

    • DOI

      10.7567/jjap.56.04ch06

    • NAID

      210000147620

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Presentation] Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes2016

    • Author(s)
      T.Ariyoshi, S.Funaki, K.Sakamoto, A.Baba, and Y.Arima
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research

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Published: 2014-04-04   Modified: 2018-03-22  

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