| Project/Area Number |
26420319
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Keywords | グラフェン配線 / 化学的気相成長 / 固相析出 / 電流印加 / エレクトロマイグレーション / 低温プロセス / 結晶性 / 集積回路 / グラフェン形成 / 低温化 / 電流印加アニール / 結晶性改善 / 電流密度 / 直接堆積 / 配線 / 均一性改善 / グラフェン / アニール / 電流ストレス / 膜質向上 |
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| Outline of Final Research Achievements |
Although multilayer graphene (MLG) is expected as a nano-sized fine interconnect material, establishment of a method for forming a film with good crystallinity at low temperature is the greatest challenge for achieving MLG interconnection. In this study, the effect of electric current other than heating (temperature) was used to realize low temperature formation of MLG film and improvement of film quality, and the mechanism of its action was clarified. By this research, it is expected that MLG film with good film quality can be formed at low temperature by new means of applying current, leading to low resistance of nano size wiring.
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