| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
Graphene base hot electron transistors were fabricated and transistor action was demonstrated. For the highly reliable insulator formation, metal buffer layer was deposited under the Ar atmosphere at the low deposition rate, and subsequent deposition of Y2O3 on buffer layer was achieved by Atomic layer deposition. The graphene base hot electron transistor showed Ion/Ioff = ~10^2 and large current gain, compared with the previous study.
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