Improvement of current gain for graphene-base hot electron transistors
| Project/Area Number |
26630121
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Nagashio Kosuke 東京大学, 工学(系)研究科(研究院), 准教授 (20373441)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | グラフェン / ホットエレクトロントランジスタ / ALD / バッファー層 / ホットエレクトロン / Y2O3 |
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| Outline of Final Research Achievements |
Graphene base hot electron transistors were fabricated and transistor action was demonstrated. For the highly reliable insulator formation, metal buffer layer was deposited under the Ar atmosphere at the low deposition rate, and subsequent deposition of Y2O3 on buffer layer was achieved by Atomic layer deposition. The graphene base hot electron transistor showed Ion/Ioff = ~10^2 and large current gain, compared with the previous study.
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Report
(3 results)
Research Products
(20 results)
