| Project/Area Number |
26630350
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
Honda Kensuke 山口大学, 理工学研究科, 教授 (60334314)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | アモルファスカーボン / 半導体材料 / ナノ粒子 / 光電変換機能 |
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| Outline of Final Research Achievements |
The objective of this study is to establish the plasma CVD method to control the size and optical gaps of Si-added a-C semiconductor nano-particles whose optical gaps can be selected by changing Si atom% incorporated in Si-added a-C.
When porous aluminum plate was inserted in plasma during plasma CVD synthesis of Si-added a-C, high-power area were formed in pores of aluminum plate and Si-added a-C nanoparticles were obtained. The diameter of Si-added a-C nanoparticles was be able to be controlled from 212 nm to 15 nm by changing the position of aluminum plate in plasma, total pressure of reaction chamber and thickness of aluminum plate during plasma CVD synthesis. The optical gaps of Si-added a-C nanoparticles was be able to be regulated in the range from 2.1 eV to 2.7 eV.
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