| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Outline of Final Research Achievements |
Research of complimentary high electron mobility transistor (c-HEMT) composed of III-V compound semiconductors with the lattice parameter of 6.1 angstrom has been performed for next-generation information and communication technology. The significant reduction of the stacking faults that made the device characteristics worsen was achieved. The device structure of c-HEMT was designed by technology CAD. The crystal structure with the quantum wells was grown successfully with no lattice relaxation and less stacking faults, and each electrical characteristics of electron and hole were measured by etching the top epitaxy layers selectively. The metal materials of the ohmic electrode was investigated using the TLM methods, and the static characteristic of the HEMTs were evaluated.
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