Fabrication of high dielectric BaTiO3 film by a control of defect structures using transmission electron microscopy
| Project/Area Number |
26889078
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Japan Fine Ceramics Center |
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Principal Investigator |
KOBAYASHI Shunsuke 一般財団法人ファインセラミックスセンター, その他部局等, 研究員 (60714623)
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| Project Period (FY) |
2014-08-29 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | チタン酸バリウム / 薄膜 / 誘電率 / 透過型電子顕微鏡 / 歪み / BaTiO3 / ドメイン / STEM / 走査型透過電子顕微鏡 / 強誘電体 / パルスドレーザー堆積法 |
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| Outline of Final Research Achievements |
High dielectric material is very important for technological applications. Especially, ferroelectric perovskite oxide films have been intensively investigated due to an expectation for a high dielectric constant. In this study, we aim to fabricate the high dielectric BaTiO3 film by tuning stoichiometry in a film and forming atomically flat interface between an electrode and a film. In the present BaTiO3 film, the dielectric constant showed ε = 11,005 at Tc (690 K) and also over 2,000 (300 ~690 K), which is significantly higher than previously reported values.
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Report
(3 results)
Research Products
(8 results)
