Development of nitride targets with a new RF-discharge reactive sputtering apparatus with magnetron.

• Project/Area Number: 58840006
• Research Category: Grant-in-Aid for Developmental Scientific Research
• Allocation Type: Single-year Grants
• Research Field: 核・宇宙線・素粒子
• Research Institution: The University of Tokyo
• Principal Investigator: SUGAI Isao 東京大学, 原核研, その他 (80150291)
• Project Period (FY): 1983 – 1985
• Project Status: Completed (Fiscal Year 1985)
• Budget Amount: ¥5,600,000 (Direct Cost: ¥5,600,000); Fiscal Year 1985: ¥600,000 (Direct Cost: ¥600,000); Fiscal Year 1984: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 1983: ¥4,000,000 (Direct Cost: ¥4,000,000)
• Keywords: Nuclear Target / Sputtering / Magnetron / RF-Discharge / 薄膜形成

Research Abstract

We have designed and constructed a new RF-discharge reactive sputtering apparatus with magnetron. By using the apparatus, we have developed a method to make nitride targets and successfully prepared such as TiN, NbN and AiN targets.
The purity of the targets has been investigated by means of elastic scattering of 65 MeV alpha particles from INS-SF cyclotron.