2010 Fiscal Year Final Research Report
Development of Si-based Spintronic Devices
| Project Area | Creation and control of spin current |
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| Project/Area Number |
19048030
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
AKINAGA Hiroyuki National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 副研究センター長 (90221712)
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| Co-Investigator(Kenkyū-buntansha) |
SUEMASU Takashi 国立大学法人筑波大学, 大学院・数理物質科学研究科, 教授 (40282339)
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| Project Period (FY) |
2007 – 2010
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| Keywords | MBE / エピタキシャル / 磁性 / スピンエレクトロニクス / ナノ材料 / 半導体物性 |
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| Research Abstract |
To promote integration of 'spintronics' and 'the silicon technology', we are focusing on the actualization of a highly effective spin-injection in the silicon-based device with the aims of "Development of silicon-based ferromagnets", "Demonstration of the spin-injection in ferromagnetic metal / silicon heterostructures". We have succeeded in showing that γ'-Fe4N possesses the high spin polarization (0.59) and the large magnetic moment (2.45μB/Fe). The successful operation of epitaxial CaF_2/Fe_3Si/CaF_2 ferromagnetic resonant tunneling diode was also demonstrated.
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Research Products
(20 results)
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[Journal Article] Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3C-SiC2008
Author(s)
G.S.Song, M.Kobayashi, J.Hwang, T.Kataoka, M.Takizawa, A.Fujimori, T.Ohkochi, Y.Takeda, T.Okane, Y.Saitoh, H.Yamagami, F.Takano, H.Akinaga
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Journal Title
Japanese Journal of Applied Physics 47
Pages: 7113
Peer Reviewed
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