2011 Fiscal Year Final Research Report
Advanced semiconducting devices using regulated nano-space materials
| Project Area | New Materials Science Using Regulated Nano Spaces －Strategy in Ubiquitous Elements |
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| Project/Area Number |
19051017
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
KANAYAMA Toshihiko 独立行政法人産業技術総合研究所, 情報通信・エレクトロニクス分野, 研究統括 (70356799)
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| Co-Investigator(Kenkyū-buntansha) |
TADA Tetsuya 独立行政法人産業技術総合研究所, ナノエレクトロ二クス研究部門, グループ長 (40188248)
MIYAZAKI Takehide 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (10212242)
UCHIDA Noriyuki 独立行政法人産業技術総合研究所, ナノエレクトロ二クス研究部門, 研究員 (60400636)
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| Project Period (FY) |
2007 – 2011
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| Keywords | 遷移金属内包Siクラスター / ナノエレクトロニクス / 超薄膜 |
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| Research Abstract |
We synthesized amorphous semiconductor films composed of transition metal encapsulating Si clusters (MSi_n) on solid substrates. The MSi_n film has higher carrier mobility than hydrogenated amorphous Si. We observed clearly the electric field effect on electrical conduction in the MSi_n films. Moreover, we have succeeded in formation of the hetero-epitaxial WSi_n layer on the Si substrate, enabling us to fabricate a low-barrier hetero junction contact to n-Si.
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