2017 Fiscal Year Final Research Report
A study on ultra-low-noise high-speed imaging devices using SOI technology
Project Area | Interdisciplinary research on quantum imaging opened with 3D semiconductor detector |
Project/Area Number |
25109003
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Research Category |
Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | Shizuoka University |
Principal Investigator |
Kawahito Shoji 静岡大学, 電子工学研究所, 教授 (40204763)
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Co-Investigator(Kenkyū-buntansha) |
池辺 将之 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (20374613)
香川 景一郎 静岡大学, 電子工学研究所, 准教授 (30335484)
安富 啓太 静岡大学, 電子工学研究所, 助教 (50621661)
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Project Period (FY) |
2013-06-28 – 2018-03-31
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Keywords | 量子イメージング / 電荷収集構造 / イベント駆動型量子エネルギー計測 / 広ダイナミックレンジ / 時間デジタル変換 |
Outline of Final Research Achievements |
In this study, a high-sensitvity SOI(Silicon-on-insulator) pixelated radiation detector using a pinned depeleted diode structure (SOPIX-PDD) is proposed and its exellent performance is demonstrated with the design and implementation of the SOI semiconductor chips. The SOIPIX-PDD has a pinned p-well layer underneath the buried oxide (BOX) and a depleted channel under the pinned p-well for gathering signal carriers generated at an arbitrary position in the pixel. This structure allows us to realize reduced dark current generated at the Si-SiO2 (BOX) interface, high charge correction efficiency and low-noise carrier detection with the small detector capacitance. An X-ray energy spectrum at 5.9keV is sucessfully measured with the high resolution of 171eV (FWHM). A SOI-based lock-in pixel detector and time-to-digital converter for mass-spectroscopy are also developed.
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Free Research Field |
工学、電気電子工学、電子デバイス・電子機器
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