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1990 Fiscal Year Final Research Report Summary

Simulation of Thermal CVD Reactor

Research Project

Project/Area Number 01303009
Research Category

Grant-in-Aid for Co-operative Research (A)

Allocation TypeSingle-year Grants
Research Field 化学工学
Research InstitutionGunma University

Principal Investigator

KATO Kunio  Gunma Univ., Faculty of Engineering, Professor, 工学部, 教授 (00008442)

Co-Investigator(Kenkyū-buntansha) NAKAYAMA Tsukasa  Chuo Univ., Faculty of Science and Engineering, Associate Professor, 理工学部, 助教授 (20144446)
HOZAWA Mitsunori  Tohoku Univ., Chemical Research Inst. of Non-Aqueous Solutions, Professor, 非水溶液化学研究所, 教授 (70005338)
HASHIMOTO Kenji  Kyoto Univ., Faculty of Engineering, Professor, 工学部, 教授 (20025919)
KOMIYAMA Hiroshi  Univ. of Tokyo, Faculty of Engineering Professor, 工学部, 教授 (80011188)
IMAISHI Nobuyuki  Kyushu Univ., Inst. of Advanced Material Study, Professor, 機能物質科学研究所, 教授 (60034394)
Project Period (FY) 1989 – 1990
KeywordsCVD / Polysilicon / Epitaxial growth / Wafer / Film formation / Ultra fine particle / Natural convection / Silicon compounds
Research Abstract

It is necessary for the simulation of CVD reactor to get the informations on the reaction kinetics and the transport phenomena in the reactor.
Komiyama et al. have proposed Macro/Micro Cavity method to analyze the film formation characteristics by CVD and investigated on the formation of poly-Si film from silane by this method. Hashimoto et al. have studied the reaction kinetics on the production of polycrystalline Silicon by the decomposition of mono-silane and found that it was needed for the precise analysis of the reaction behavior to consider the radial distribution of silane concentration.
Kato et al. have investigated the mass transfer and fluid flow models in a vertical multicomponent CVD reactor and the disk-type CVD reactor. The factors affecting the local mass transfer at the surface of wafer in the CVD reactor were clarified, and the model to analyze the distribution of the deposit rate in the vertical multicomponent CVD reactor was proposed. Imaishi has studied the simulation of the deposition of polysilicon film in a multicomponent CVD reactor by using the kinetic data obtained by Komiya and Shimogaki. The heat and mass transfer phenomena and the distribution of the film formation rate in the hot wall tubular CVD reactor and the horizontal thermal CVD reactor were analyzed numerically. Hozawa et al. have analyzed numerically the temperature distribution in the high-frequency induction heating CVD reactor. The effects of coil the positions of and susceptor and the frequency on the temperature distribution in the reactor were examined by analyzing both the electromagnetic field and temperature field. Nakayama et al. have analyzed the unsteady state flow in the tubular reactor by a finite element method and determined the distributions of gas velocity and gas concentration quantitatively.

  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] 加藤 邦夫,黛 雅典 (故)飯島 健,大久保 裕司 宝田 恭之: "ディスク型CVD装置内での平均物質移動係数" 化学工学論文集. 15. 832-836 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 加藤 邦夫,黛 雅典 (故)飯島 健,宝田 恭之: "ディスク型CVD装置における局所物質移動係数におよぼす二重管式ノズルの効果" 化学工学論文集. 15. 837-842 (1989)

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  • [Publications] 稲垣 隆之,小宮山 宏: "超微粒子沈着DVDによるAIN膜の高速成膜" 化学工学論文集. 15. 849-856 (1989)

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  • [Publications] K.Hashimoto,K.Miura T.Masuda,M.Toma H.Sawai and M.Kawase: "Growth Kinetics of Polycrystalline Silicon from Silane by Thermal Chemical Vapor Deposition Method" J.Electrochem.Soc.137. 1000-1007 (1990)

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      「研究成果報告書概要(和文)」より
  • [Publications] 宝田 恭之,織茂 洋二 鹿山 幸夫,加藤 邦夫: "垂直多葉熱CVD装置内の物質移動現象" 化学工学論文集. 16. 597-604 (1990)

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  • [Publications] 佐藤 恒之,今石 宣之: "CVDに及ぼす気相および表面反応の影響に関する一考察" 化学工学論文集. 16. 483-486 (1990)

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  • [Publications] 橋本 健治,三浦 孝一 増田 隆夫,当麻 正明 沢井 宏之,河瀬 元明: "棒状基板型CVD反応器におけるシランからの多結晶シリコン製造反応の速度解析" 化学工学論文集. 16. 438-446 (1990)

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  • [Publications] 小山田 浩,霜垣 幸治 小宮山 宏: "LPCVDの全圧による粉体・膜合成の制御 ーSiH_4とC_6H_6によるSiCの合成ー" 化学工学論文集. 16. 463-469 (1990)

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  • [Publications] K.Watanabe and H.Komiyama: "Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of Sio_2 Films by LPCVD" J.Electrochem.Soc.137. 1222-1227 (1990)

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  • [Publications] Y.Egashira,K.Ikuta,K.Watanabe and H.Komiyama: "Mechanism of Step Coverage Formation of Sio_2 Films Studied by Micro/Macrocavity Method" Proceedings of 11th International Conference on CVD(CVDX1). 418-424 (1990)

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      「研究成果報告書概要(和文)」より
  • [Publications] 佐藤 恒之,湯浅 兵則 今石 宣之: "水平型熱CVD装置内における流動ならびに物質移動" 化学工学論文集. (1991)

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      「研究成果報告書概要(和文)」より
  • [Publications] H. Komiyama: "Present Status of Research on Chemical Vapor Deposition Methods and Significance of Chemical Engineering Approach" Kagaku Kogaku Ronbunsyu. 16, 3. 415-429 (1990)

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      「研究成果報告書概要(欧文)」より
  • [Publications] K. Watanabe and H. Komiyama: "Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of SiO_2 Films by LPCVD" J. Electrochem. Soc.137, 4. 1222-1227 (1990)

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      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Egashira, K. Ikuta, K. Watanabe and H. Komiyama: "Mechanism of Step Coverage Formation of SiO_2 Films Stuied by the Micro/Macrocavity Method" Proceedings of 11th International Conference on CVD(CVDX1). 418-424 (1990)

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  • [Publications] T. Inagaki and H. Komiyama: "Rapid Growth of AIN Films by Particle PrecipitationーAided Chemical Vapor Deposition" Kagaku Kogaku Ronbunsyu. 15, 4. 849-856 (1989)

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      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto, K. Miura, T. Masuda, M. Toma, H. Sawai and M. Kawase: "Growth Kinetics of Polycrystalline Silicon from Silane by Thermal Chemical Vapor Deposition Method" J. Electrochem. Soc. 137, 3. 1000-1007 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto, K. Miura, T. Masuda, M. Toma, H. Sawai and M. Kawase: "Kinetic Analysis of Polycrystalline Silicon Growth from Silane Using a Rod-Substrate CVD Reactor" Kagaku Kogaku Ronbunsyu. 16, 3. 438-446 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Oyamada, Y. Shimogaki and H. Komiyama: "Control of Particle and Film Formation by Changing the Total Pressure in LPCVD - Preparation of SiC from SiH_4 and C_6H_6" Kagaku Kogaku Ronbunsyu. 16, 3. 463-468 (1990)

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  • [Publications] K. Kato, M. Mayuzumi, the late T. Iijima, Y. Okubo and T. Takarada: "Average Mass Transfer Coefficient in the Disk-Type CVD Reactor" Kagaku Kogaku Ronbunsyu. 15, 4. 832-836 (1989)

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  • [Publications] K. Kato, M. Mayuzumi, the late T. Iijima and T. Takarada: "Effect of Double-Pipe Nozzle on Local Mass Transfer Coefficient in the Disk-Type CVD Reactor" Kagaku Kogaku Ronbunsyu. 15, 4. 837-842 (1989)

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  • [Publications] T. Takarada, Y. Orimo, Y. Kayama and K. Kato: "Mass Transfer Phenomenon in Vertical Multicomponent CVD Reactor" Kagaku Kogaku Ronbunsyu. 16, 3. 597-604 (1990)

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  • [Publications] T. Sato and N. Imaishi: "The Effects of Gas Phase and Surface Chemical Reactions on Film Growth Rate in a Tubular CVD Reactor" Kagaku Kogaku Ronbunsyu. 16, 3. 483-486 (1990)

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  • [Publications] N. Imaishi: "Crystal Growth and Thermal Properties" Netsu Bussei. 4, 2/3. 104-108 (1990)

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Published: 1993-08-12  

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