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1990 Fiscal Year Final Research Report Summary

Solid-state traveling wave amplifier type device formed by semiconductors and helix type slow wave circuits

Research Project

Project/Area Number 01550234
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHokkaido University

Principal Investigator

IIZUKA Kouichi  Fac.of Eng., Hokkaido University, Research Associate, 工学部, 助手 (30193147)

Co-Investigator(Kenkyū-buntansha) HASHIZUME Tamotsu  Electric of Eng., Hokkaido Polytechnic College, Instructor, 電子技術科, 教官
FUKAI Ichirou  Fac.of Eng., Hokkaido Univ., Professor, 工学部, 教授 (70001740)
HASEGAWA Hideki  Fac.of Eng., Hokkaido Univ., Professor, 工学部, 教授 (60001781)
Project Period (FY) 1989 – 1990
KeywordsSolid state traveling wave interaction / Microwave amplification / Compound semiconductor / Interdigital slow wave circuits / Helix type slow wave circuits / MIS structure / MMIC / MBE
Research Abstract

Carrier transit delay can be positively utilized in the traveling wave amplifier(TWA) type devices based on coupling between carrier waves and slow electromagnetic waves. Such devices using semiconductors, if feasible, are expected to possess both high-power and wide-band capabilities.
In the present study, solid state traveling wave devices formed by semiconductors and helix type slow wave circuits are investigated theoretically and experimentally.
Basic design principles of solid state traveling wave devices and helix type slow wave circuits formed on semiconductors and dielectric substrates were established and theoretical analysis of transmission properties was made.
Helix type slow wave circuits formed on dielectric substrate were made and measured characteristic impedance and slow wave factor. Their properties were found to be in good agreement with the theoretical prediction.
Properties of InGaAs MIS structure for application to TWA type devices using semiconductors were investigated by InGaAs photoconductive detectors. A novel passivation technique using an ultrathin MBE Si layr was developed.
Prototype of such solid state TWA type devices was made and now is studied experimentally.

  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] H.Hasegawa and K.Iizuka: "Effects of Carriers on Propergation of Electromagnetic Waves Along Planar Waveguides Formed on Semiconductors" Proc.of Progress in Electromagnetic Research Symposium(PIERS). 72-74 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa,M.Akazawa,H.Ishii and K.Matsuzaki: "Control of compound semiconductor-insulator interfaces by an ultrathin molecular beam epitaxy Si layer" J.Vac.Sci.Technol.B. 7. 870-878 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Akazawa,H.Hasegawa and E.Ohue: "In_<0.53>Ga_<0.47>As MISFETs having an ultrathin MBE Si interface control layer and photo-CVD SiO_2 insulator" Jpn.J.Appl.Phys.28. L2095-L2097 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.X.Yang,H.Ishii,K.Iizuka,H.Hasegawa and H.Ohno: "MBE Growth of InP Using Polycrystalline InP as Phosphorus Source" 2nd Int.Conf.on InP and Related Materials. (1990)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Iizuka,H.Hasegawa: "Experimental and Theoretical Study of Travelling Wave Interractions in InGaAs Layer Using the Electrode of Helix Type Slow-wave Pattern(投稿予定)" IEEE Trans.Microwave and Techniques.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Iizuka,H.Hasegawa and H.Ohno: "Experimental and Theoretical Study of Travelling Wave Interractions in n-Type InP Layer Using the Electrode of ac-coupled Interdigital Pattern(投稿予定)" IEEE Trans.Microwave and Techniques.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa and K.Iizuka: ""Effects of Carriers on Propergation of Electromagnetic Waves Along Planar Waveguides Formed on Semiconductors" Proc.of Progress in Electromagnetic Research Symposium(PIERS). 72-74 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Iizuka, J.Akasaka, T.Tsubata and H.Hasegawa: ""Sufrace recombination in InGaAs photoconductive detectors and its reduction by a novel passivation scheme using an MBE Si layr"" Proc.of 16th Int.Symp.on GaAs and Related Comp.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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