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1993 Fiscal Year Final Research Report Summary

Artificial Control of Semiconductor Heterojunction Band Discontinuity

Research Project

Project/Area Number 03402022
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionUniversity of Tokyo

Principal Investigator

IKOMA Toshiaki  Univ. Tokyo, Inst. Industrial Scicence, Prof, 生産技術研究所, 教授 (80013118)

Co-Investigator(Kenkyū-buntansha) SAITO Toshio  Univ. Tokyo, Inst. Industrial Res. Associate, 生産技術研究所, 助手 (90170513)
HIRAKAWA Kazuhiko  Univ. Tokyo, Inst. Industrial Associate Prof, 生産技術研究所, 助教授 (10183097)
Project Period (FY) 1991 – 1993
Keywordsheterojunction / band offsets / interface dipole / x-ray photoemission spectroscopy / tight-binding calculations / band bending / delta-doping
Research Abstract

Roles of Si layr at GaAs/AlAs structures have been studied by x-ray photoemission spectroscopy(XPS) and self-consistent tight-binding calculations. It is found that one has to precisely control the Si-occupying sites to from an artificial interface dipole to control heterojunction band offsets. However, under the present experimental condition, inserted Siatoms distribute over a few atomic layrs and mainly act as donor impurities, which introduce only a band bending.
Alternatively, we proposed to combine two closely spaced delta-doping layrs to vary the band offsets. Hall measurements show that a growth temperature varies a conduction type of(311)A-oriented GaAs delta-doped with only Si as a dopant. The effective band offset is varied by -0.5eV at a GaAs/AlAs heterostructure with p-and n-type Si doping sheets with a narrow spacing of -5 nm. This experiment shows that by controlling atomic sites of inserted Si, we can introduce an artificial interface dipole to realize a control of heterojunction band offsets.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] T.Saito: "Band Discontinuity and Effects of Si-Insertion Layer at(311)A GaAs/AlAs Interface" Solide State Electronics. (to be published). (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hashimoto: "Roles of Si insertion Layer at GaAs/AlAs heterointerface determined by X-ray photoemission Spectroscopy" J.Vac.Sci.Tech.(to be published). (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Agawa: "Electrical Properties of Heavily Si-doped GaAs grown on(311)A GaAs Surfaces by Molecular Beam Epitaxy" Proceedings of 20th Int'l Symp,GaAs and Related Compounds. (to be published). (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 橋本佳男: "半導体ヘテロ界面のバンド不連続量の測定とその制御" 応用物理. 63. 116-123 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 斎藤敏夫: "(311)A GaAs/AlAsヘテロ界面のバンド不連続量の人工的制御" 電子情報通信学会技術研究報告. ED93. 53-57 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 生駒俊明: "半導体ヘテロ界面におけるバンド不連続の人為的制御" 生産研究. 45. 21-24 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Saito, K.Hashimoto and T.Ikoma: "Band discontinuity and effects of Si-insertion layr at(311)A GaAs/AlAs interface" Solid State Electronice(to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hashimoto, G.Tanaka and T.Ikoma: "Roles of Siinsertion layr at GaAs.AlAs heterointerface determined by X-ray photoemission spectroscopy" J.Vacuum Sci. & Tech.(to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Agawa, K.Hashimoto, K.Hirakawa and T.Ikoma: "Electrical properties of heavily Si-doped GaAs grown on(311)A GaAs surfaces by molecular beam epitaxy" Proc. Inte'l Symp. on GaAs and Related Compounds(to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hashimoto, T.Saito and T.Ikoma: "Determination and artificial control of heterojunction band discontinuities(In Japanese)" OYO BUTURI. Vol.63, No.2. 116-123 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, K.Hashimoto and T.Ikoma: "Artificial contorol of band discontinuity at(311)A GaAs/AlAs heterointerface(In Japanese)" Technical Report of IEICE. Vol.ED93-129. 53-57 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ikoma, K.Hashimoto and T.Saito: "Artificial control of heterojunction band discontinuities(In Japanese)" SESAN-KENKYU. Vol.45, No.11. 21-24 (1993)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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