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1992 Fiscal Year Final Research Report Summary

Fabrication of Surface-Emitting Laser Array

Research Project

Project/Area Number 03555079
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

IGA Kenichi  Tokyo Institute of Technology, Precision and Intelligence Laboratory, Professor, 精密工学研究所, 教授 (10016785)

Co-Investigator(Kenkyū-buntansha) BABA Toshihiko  Tokyo Institute of Technology, Precision and Intelligence Laboratory, Research A, 精密工学研究所, 助手 (50202271)
SAKAGUCHI Takahiro  Tokyo Institute of Technology, Precision and Intelligence Laboratory, Research A, 精密工学研究所, 助手 (70215622)
Project Period (FY) 1991 – 1992
KeywordsSurface Emitting Laser / 2-Dimensional Array / Integrated Device / Parallel Optical Fiber Communication / Semiconductor Laser
Research Abstract

We consider some possible applications including optical interconnects, parallel fiberoptic subsystems, and so on by featuring high power capabilities and largely extending 2-D arrays, For the purpose of realizing coherent arrays, coherent coupling of these arrayed lasers has been tried by using a talbot cavity and phase compensation is considered. It is pointed out that 2-D arrays are more suitable to make a coherent array than a linear configuration, since we can take the advantage of 2-D symmetry. The research activity is now forwarded to monolithic integration of SE laser based optical circuits by taking the advantage of its small cavity dimension. Densely packed arrays have also been demonstrated for the purpose of making high power lasers and coherent arrays.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] K.IGA: "Surface emitting lasers" Opt. and Quantum Electron.24. S97-S104 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.IGA: "Surface emitting lasers and parallel operating devices -fundamentals and prospects-" IEICE Trans. Fundamentals. E75-A. 12-19 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.OSHIKIRI: "Optical thickness monitoring in dielectric multilayer deposition for surface emitting laser reflectors" Electronics and Communications in Japan. 75. 12-19 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.MUKAIHARA: "Stress effect for polarization control of surface emitting lasers" Electron.Lett.28. 555-556 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.MUKAIHARA: "Polarization control of surface emitting lasers by anisotropic biaxial strain" Jpn.J.Appl.Phys.31. 1389-1390 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.TAMANUKI: "Interface recombination reduction by (NH_4)_2S_<x->P passivation in metalorganic chemical vapor deposition regrown GaAlAs/GaAs BH lasers and estimation of threshold currents in microcavity SE lasers" Jpn.J.Appl.Phys.31. 3292-3295 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 伊賀 健一: "先端技術と私I(分担)" 朝倉書店, 1-17 (1991)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Iga: "Surface emitting lasers" Opt. and Quantum Electron.24. S97 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Iga: "Surface emitting lasers and parallel operating device-fundamentals and prospect-" IEICE Trans. Fundamentals in Japan. 75. 12 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Oshikiri: "Optical thickness monitoring in dielectric multilayer deposition for surface emitting laser reflectors" Electronics and Communications in Japan. 75. 12 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Mukaihara: "Stress effect for polarization control of surface emitting lasers" Electron. Lett.28. 555 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Mukaihara: "Polarization control of surface emitting lasers by anisotropic biaxial strain" Jpn. J . Appl. Phys.31. 1389 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Tamanuki: "Interface recombination reduction by(NH_4)_2S_X-P passivation in metalorganic chemical vapor deposition regrown GaAlAs/GaAs BH lasers and estimation of threshold currents in microcavity SE lasers" Jpn. J. Appl. Phys.31. 3292 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Iga: "Surface Emitting Lasers and I" Asakura Shoten. 1. (1991)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1994-03-24  

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