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1994 Fiscal Year Final Research Report Summary

Basic research on semiconductor materials and devices

Research Project

Project/Area Number 04045023
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionUniversity-to-University Cooperative Research
Research InstitutionTokyo institute of Technology

Principal Investigator

FURUYA Kazuhito  Tokyo Institute of Technology, 工学部, 教授 (40092572)

Co-Investigator(Kenkyū-buntansha) SUH Eun-kyung  Jeonbuk National University, 助教授
SEO Jae-myung  Jeonbuk National University, 助教授
LIM Kee-young  Jeonbuk National University, 助教授
LEE Hyung-jae  Jeonbuk National University, 教授
IGA Kenichi  Tokyo Institute of Technology, 精密工学研究所, 教授 (10016785)
KUKIMOTO Hiroshi  Tokyo institute of Technology, 工学部, 教授 (50013488)
TAKAHASHI Kiyoshi  Tokyo Institute of Technology, 工学部, 教授 (10016313)
Project Period (FY) 1992 – 1994
KeywordsUltrafast electronics / Optoelectronics / Quantum effect electronics / Japan-Korea academic cooperation / Jeonbuk University Semiconductor Physics Research Center
Research Abstract

From 22 June 1994 to 26 June, we invited two researchers from Korea to Tokyo Institute of Technology. At Ultrafast Electronics Research Building in Tokyo Institute of Technology, researchers from Korea and Japan had meetings to discuss on the ultrafast electronics, the optoelectronics, and the advanced process techniques. During their stay in Japan, Korean and Japanese researchers attended the Solid State Devices and Materials Conference to discuss on latest research topics and trend and the direction of our research cooperation.
From 24 November 1994 to 27 November, one researcher visited the Semiconductor Physics Research Center of Jeonbuk University in Korea from Tokyo Institute of Technology to present an invited talk at the Symposium of Semiconductor Physics on Korea. Researchers from Japan and Korea discussed on quantum effect physics and device application. He also visited research facilities in the Center.
From 26 January 1995 to 27 January, two Korean researchers visited Tokyo Institute of Technology from Jeonbuk University to discuss on quantum effect physics and its device application. Japanese researcher explained about the system of the Quantum Effect Electronics Research Center newly opened in June 1995 at Tokyo Institute of Technology.
Owing to the above international activity on the research, we have started to cooperate on the research of semiconductor physics, materials and its device applications.

  • Research Products

    (36 results)

All Other

All Publications (36 results)

  • [Publications] Kzuhito Furuya: "Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices" Jpn.J.Appl.Phys.33. 925-928 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuhito Furuya: "Estimation of Phase Coherent Length of Hot Electrons in GaInAs using Resonant Tunneling Diodes" Jpn.J.Appl.Phys.33. 6491-6495 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiyoshi Takahashi: "Effects of SiH_2Cl_2 on low-temparature(<200℃) Si epitaxy by photochemical vapor deposition" Applied Surface Science. 79. 215-219 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiyoshi Takahashi: "Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs" Journal of Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiyoshi Takahashi: "Low Temparature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Jpn.J.Appl.Phys.33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hiroshi Kukimoto: "Atomic Layer Epitaxy of AlAs Using Ethyldimethylamine Alane as a New Aluminum Source" Appl.Phys.Lett.65. 1115-1117 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hiroshi Kukimoto: "Metalorganic Vapor Phase Epitaxy Growth of p-Type ZnSSe and Its Application for Blue-Green Lasers" J.Cryst.Growth. 138. 755-758 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hiroshi Kukimoto: "Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers" Jpn.J.Appl.Phys.33. 1211-1212 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kenichi Iga: "Highly p-type doping of ZnSe using Li_3N diffusion" Appl.Phys.Lett.65. 2437-2438 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron.,Lett.30. 1947-1948 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kenichi Iga: "Measurement of Sidewall Roughness of InP Etched by Reactive Ion Beam Etching" Jpn.J.Appl.Phys.33. 6737-6738 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hyung-Jae Lee: "Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hyung-Jae Lee: "Light-emission phenomena from porous silicon;Siloxene compounds and quantum size effect" J.Appl.Phys.75. 8060-8065 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kee-Young Lim: "Intensity variation of PL in In_xGa_1-_xAs/GaAs multiquantum-well structures" Appl.Phys.Lett.65. 333 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si(100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Eun-Kyung Suh: "Semi-Insulation Substrate Effects on Pure GaAs Epilayers" Jpn.J.Appl.Phys.33. 2457-2462 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuhito Furuya: "Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices" Jpn.J.Appl.Phys.33. 925-928 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuhito Furuya: "Estimation of Phase Coherent Length of Hot Electrons in GaInAs using Resonant Tunneling Diodes" Jpn.J.Appl.Phys.33. 6491-6495 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiyoshi Takahashi: "Effects of SiH_2Cl_2 on low-temparature (<200゚C) Si epitaxy by photochemical vapor deposition" Applied Surface Science. 79. 215-219 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiyoshi Takahashi: "Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs" Journal of Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiyoshi Takahashi: "Low Temparature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Jpn.J.Appl.Phys.33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hiroshi Kukimoto: "Atomic Layr Epitaxy of AlAs Using Ethyldimethylamine Alane as a New Aluminum Source" Appl.Phys.Lett.65. 1115-1117 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hiroshi kukimoto: "Metalorganic Vapor Phase Epitaxy Growth of p-Type ZnSSe and Its Application for Blue-Green Lasers" J.Cryst.Growth. 138. 755-758 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hiroshi Kukimoto: "Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers" Jpn.J.Appl.Phys.33. 1211-1212 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kenichi Iga: "Highly p-type doping of ZnSe using Li_3N diffusion" Appl.Phys.Lett.65. 2437-2438 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron., Lett.30. 1947-1948 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kenichi Iga: "Measurement of Sidewall Roughness of Inp Etched by Reactive Ion Beam Etching" Jpn.J.Appl.Phys.33. 6737-6738 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hyung-Jae Lee: "Interfacial layr formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hyung-Jae Lee: "Light-emission phenomena from porous silicon ; Siloxene compounds and quantum suze effect" J.Appl.Phys.75. 8060-8065 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kee-Young Lim: "Intensity vatiation of PL in In_xGa_<1-x>As/GaAs multiquantum-well structures" Appl.Phys.Lett.65. 333- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si (100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Eun-Kyung Suh: "Semi-Insulation Substrate Effects on Pure GaAs Epilayrs" Jpn.J.Appl.Phys.33. 2457-2462 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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