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1993 Fiscal Year Final Research Report Summary

Atomic Image Observation and nano area Analysis of Epitaxial Process of Metals on Semiconductor by Ultrahigh Vacuum Scanning Electron Microscopy

Research Project

Project/Area Number 04452035
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 固体物性
Research InstitutionUniversity of Tokyo

Principal Investigator

INO Shozo  University of Tokyo, Graduated School of Science, Professor, 大学院・理学系研究科, 教授 (70005867)

Co-Investigator(Kenkyū-buntansha) SHIMOKOSHI Fumio  University of Tokyo, Graduated School of Science, Assistant, 大学院・理学系研究科, 助手 (00013409)
HASEGAWA Shuji  University of Tokyo, Graduated School of Science, Assistant, 大学院・理学系研究科, 助手 (00228446)
Project Period (FY) 1992 – 1993
Keywordsscanning electron microscopy / epitaxy / surface structure / semiconductor surface / reflection high energy electron diffraction
Research Abstract

In 1992, we constructed a small vacuum chamber in which we can check sample surface condition, and combined it to the ultrahigh vacuum scanning electron microscope(UHV-SEM). We completed a SEM apparatus in which we can study beforehand the surface structures by reflection high energy electron diffraction(RHEED) and surface elementaly analysis by total reflection angle X-ray spectroscopy(TRAXS) and then the sample can move into SEM apparatus without exposing it in air.
We deposited Au, Ag, Bi, Ga, In etc.on a Si(111) surface and investigated the surface structures and surface compositions. These surfaces were also observed by UHV-SEM.When 1ML(mono layr) of Bi was deposited on the Si(111)-7X7 surface, three types of contrast, B(beta-ROO<3>XROO<3>), M(alpha-ROO<3>XROO<3>) and D(7X7) were observed. The contrast B and M were clerly observed along the substrate steps and anti-phase domain boundaries of th 7X7 structure.
In 1993, we studied the composition analysis of nano meter area by TRAXS in UHV-SEM.The investigated surfaces were In/Si(111)-7X7, In/Si(111)-4X1-In, In/(Si(111)-ROO<3>XROO<3>-Ga, Ga/Si(111)-7X7, Ga/Si(111)-ROO<3>XROO<3>-Ag, Ag/Si(111)-ROO<3>XROO<3>-Ga etc.
(In_2Ga)In structure which was formed when 3ML of In were deposited on the Si(111)-ROO<3>XROO<3>-Ga showed specially intresting SEM images. This structure showed a very flat structure within a terrace. For futher deposition In layr incresed layr by layr fasion without the steps within a terras, resulting in an interesting structure which shuld be denoted (In_2Ga)In_m(m=1,2,3...). Thus, we obtained many interesting results in this study.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 山中俊朗,花田貴,井野正三,大門寛: "Glancing Angle Dependence of the X-ray Emission Measured under Total Reflection Angle X-ray Spectrascopy(TRAXS)Condition during RHEED observation" Japan.Journal of Applied Physics. 31. L1503-L1505 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 井野正三: "Surface Studies by RHEED(Reflection High Energy Electron Diffraction)" Microscopy Society of America Bulletin. 23. 109-118 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 福谷克之,大門寛,井野正三: "Reflection High-Energy Electron Diffraction Study of the Growth of Ge on the Ge(111)Surface" Japan.Journal of Applied Physics. 31. 3429-3435 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 遠藤彰,井野正三: "Observation of the Ag/Si(111)System using a high-resolution ultra-high Vacuum Scanning Electron Microscope" Surface Science. 293. 165-182 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 遠藤彰,井野正三: "Observation of the Au/Si(111)System with a high-resolution Ultra-high Vacuum Scanning Electron Microscope" Japan.Journal of Applied Physics. 32. 4718-4725 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 井野正三,山中俊朗: "Surface Stom Dynamics in Epitaxial Growth Studied by RHEED-TRAXS" Surface Science. 298. 432-439 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 小川四郎,渡辺伝次郎,平林真,岩崎博,井野正三: "回折結晶学と材料科学" アグネセンター, 310 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yamanaka, T.Hanada, S.Ino and H.Daimon: "Glancing Angle Dependence of the X-ray Emission Measured under Total Reflection Angle X-ray Spectroscopy(TRAXS) Condition during Reflection High Energy Electron Diffraction Observation" Japan.J.Appl.Phys.31. L1503-L1505 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ino: "Surface Studies by RHEED (Reflection High Energy Electron Diffraction)" Micro.Soc.USA Bulletin. 23. 109-118 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Fukutani, H.Daimon and S.Ino: "Reflection High-Energy Electron Diffraction Study of the Growth of Ge on the Ge(111) Surface" Japan.J.Appl Phys. 31. 3429-3435 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Endo and S.Ino: "Observations of the Ag/Si(111) System using a High Resolution Ultra-High Vacuum Scanning Electron Microscope" Surf.Sci.293. 165-182 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Endo and S.Ino: "Observations of the Au/Si(111) System with a High Resolution Ultra-High Vacuum Scanning Electron Microscope" Japan.J.Appl.Phys.32. 4718-4725 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ino and T.Yamanaka: "Surface Atom Dynamics in Epitaxial Growth Studied by RHEED-TRAXS" Surf.Sci.298. 432-439 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ogawa, D.Watanabe, M.Hirabayashi, H.Iwasaki and S.Ino: Diffraction Crystallography and Material Science. Agne Center, 1-310 (1993)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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