1993 Fiscal Year Final Research Report Summary
Advanced Science and Technology for Semiconductor Materials and Devices
| Project/Area Number |
05044206
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| Research Category |
Grant-in-Aid for Overseas Scientific Survey.
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| Allocation Type | Single-year Grants |
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KUKIMOTO Hiroshi Tokyo Institute of Technology, Professor, 工学部, 教授 (50013488)
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| Co-Investigator(Kenkyū-buntansha) |
LIM Kee Young Jeonbuk National University, 助教授
CHANG Kee Joo Korea Advanced Institute of Science and Technology, 助教授
MIN Suk Ki Korea Institute of Science and Technology, 研究員
LEE Hyung Jae Jeonbuk National University, 教授
CHOI Byung Doo Seoul National University, 教授
TAKEDA Yoshikazu Nagoya University, 工学部, 教授 (20111932)
YAO Takafumi Hiroshima University, 工学部, 教授 (60230182)
YOSHIKAWA Akihiko Chiba University, 工学部, 教授 (20016603)
SHIRAKI Yasuhiro The University of Tokyo, 先端研センター, 教授 (00206286)
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| Project Period (FY) |
1993
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| Keywords | semiconductor / quantum structure / device / process / characterization |
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| Research Abstract |
Recently, there has been an increasing research effort in the field of quantum size effects in semiconductor microstructures and their application for novel electronic and optoelectronic devices. The development of this field depends largely on progress in advanced science and technology, and thus needs international research cooperation. Korea is one of the most appropriate partner countries for the international research cooperation in this field.
The purpose of this project is, therefore, to promote the researches on advanced science and technology for semiconductor materials and devices in Japanese and Korean research institutes, based on an exchange of scientific information and mutual collaborations.
The activities and achievements of this project are as follows.
1) The materials investigated include SiGe, III-Vs (AlGaAs and GaInPAs) and II-VIs (ZnSe and CdSe). A variety of micostructures such as superlattices, quantum wires and quantum dots consisted of these materials were fabricated by using molecular beam epitaxy and metalorganic vapor phase epitaxy. Characterization of these materials and structures directed toward their device applications was also performed.
2) Japan-Korea Symposium on Advanced Science and Materials for Semiconductor Materials and Devices was held in September 1993, in Sapporo with participants of 17 from Japan and 9 from Korea. Discussion was made about the results of collaborative studies of this project.
3) Summary of this project was made at a meeting held in December, 1993 in Korea, where 4 Japanese members were sent. By using the opportunity, further research cooperation between Japan and Korea in the future was discussed.
In summary, the purpose of this research project was successfully carried out with remarkable achievements and promise for further collaborations.
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Research Products
(20 results)
