1994 Fiscal Year Final Research Report Summary
LUMINESCENCE BY INDIRECT GAP SEMICONDUCTOR
| Project/Area Number |
05302034
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| Research Category |
Grant-in-Aid for Co-operative Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
SAKAKI Akio KYOTO UNIV., PROFESSOR, 工学部, 教授 (10025900)
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| Co-Investigator(Kenkyū-buntansha) |
ITO Toshimichi OSAKA UNIV., ASSOCIATE PROFESSOR, 工学部, 助教授 (00183004)
KOSHIDA Nobuyoshi TOKYO UNIV.OF AGRI.AND TECH.PROFESSOR, 工学部, 教授 (50143631)
MASUMOTO Yasuaki UNIV.OF TSUKUBA,PROFESSOR, 物理学系, 教授 (60111580)
SHIRAKI Yasuhiro UNIV.OF TOKYO,PROFESSOR, 先端科学技術センター, 教授 (00206286)
KUKIMOTO Hiroshi TOKYO INST.TECH., PROFESSOR, 工学部, 教授 (50013488)
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| Project Period (FY) |
1993 – 1994
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| Keywords | indirect gap semiconductor / superlattice / luminescence / disoredering / brillouin zone / surface state / quantum effect / lacalized level |
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| Research Abstract |
We discussed the enhancement effect by new physical and/or chemical effects which proposed by our members on Juminescence capability for an indirect material.Obtained results in this project are as follows :
1. Luminescence from porous Si : It is shown that the luminescence processes are depend on the oxidation conditions of porous Si(Itho). In order to understand the visible luminescence from porous Si, electrical structure, photo-luminescence, and electroluminescence were investigated (Koshida). As the results, surface passivation takes important role to obtain luminescence due to the quantum effects.
2. Luminescence from Si/Ge superlattices : Luminescence properties from SiGe superlattices which have abrupt and flat interfaces by using surfactants were investigated(Sakamoto). The relation between the band offset and the luminescence efficiency was investigated. New carrier confinement structure is proposed to achieve a strong luminescence (Shiraki).
3. Luminescence from nano-crystals : Ge nano-crystals were grown in SiO_2 or NaBr and the time dependent luminescence properties were investigated. It is shown the size dependence of luminescence capability (Masumoto).
4. Theory : Theoretical analysis of oscillator strength of the superlattice structures by using first principle method. It is shown that the oscillator strength is not so large even if the band structure becomes direct by the Brillouin zone-folding(Ikeda).
Luminescence from AlP/GaP superlattices : For the strong luminescence from MBE grown AlP/GaP disordered superlattices, layr thickness dependence on the luminescence intensity was investigated(Sasaki). Strain dependence of the luminescence properties was investigated for the OMVPE grown AlP/GaP short period superlattices(Kukimoto).
Various mechanisms to improve the luminescence capability for the indirect semiconductors are clear now. After this, we hope that the conducting research for the device application by further improving the luminescence capability.
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