1995 Fiscal Year Final Research Report Summary
Collaborative Research in Five Fields of Molecular Science
Project/Area Number |
06044231
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Research Category |
Grant-in-Aid for international Scientific Research
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Allocation Type | Single-year Grants |
Section | Joint Research |
Research Institution | Okazaki National Research Institute |
Principal Investigator |
ITO Mitsuo Okazaki National Research Institutes Institute for Molecular Science Director in General, 分子科学研究所, 所長 (20013469)
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Co-Investigator(Kenkyū-buntansha) |
UNDERHILL A.E. Northwales University, 教授
MUNRO I.H. Daresbury Laboratory, 教授
PHILLIPS D. Imperial College, 教授
SARRE P.J. Nottingham University, 教授
ROBB M.A. King's College London, カレッジ, 教授
DAY P. Royal Institute, 所長
YAKUSHI Kyuya Institute for Molecular Science, 分子科学研究所, 教授 (20011695)
URISU Tsuneo Institute for Molecular Science, 分子科学研究所, 教授 (50249950)
KAJIMOTO Okitsugu Kyoto University, 理学部, 教授 (30029483)
SAITO Shuji Institute for Molecular Science, 分子科学研究所, 教授 (30106158)
NAKAMURA Hiroki Institute for Molecular Science, 分子科学研究所, 教授 (10010935)
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Project Period (FY) |
1994 – 1995
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Keywords | SOR Application / material chemistry / electronic structure / molecular cluster / semicondcuctor surface / molecular solid |
Research Abstract |
Two 5+5 meetings were held in the field of (1) application of synchrotoron radiation and (2) material chemistry.The first one was held at IMS on September 2-3,1995.Five British scientists and thirteen Japanese scientists attended, and exchanged information on the activities in both countries.The second one was held at Royal Institution in London.Seven Japanese scientists were dispatched.Useful discussions were made on conductivity and magnetism of various molecular compounds. Two young Japanese scientists were sent to England to carry out collaborative research.Dr.Tanaka of IMS went to University of Liverpool and carried out photoelectron spectroscopy of semiconductor surfaces.XPS measurements were made on the GaAs/Si/GaAs crystals and clarified the electronic structures of Si.Furthermore, RAS (reflectance anisotropy spectroscopy) measurements of Si (100) surface were carried out to investigate the surface were carried out to investigate the surface dynamics and its temperature dependence. Dr.Fujimura of Kyoto University worked at Oxford on the chemical reaction O ('D) + H_2*OH+H.From the measurement of the Doppler profile it was clarified that the scattering is dominant at forward directions and that the reaction cross section depends on the collision energy.
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