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1995 Fiscal Year Final Research Report Summary

In situ gravimetric monitoring of atomic layr epitaxy using

Research Project

Project/Area Number 06452108
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOUKITU Akinori  Tokyo Univ.Agriculture and Technology, Fac.of Technology Associate professor, 工学部, 助教授 (10111626)

Co-Investigator(Kenkyū-buntansha) TAKAHASHI Naoyuki  Tokyo Univ.Agriculture and Techology, Fac.of Technology Assistant professor, 工学部, 助手 (50242243)
SEKI Hisashi  Tokyo Univ.Agriculture and Techonology, Fac.of Technology Professor, 工学部, 教授 (70015022)
Project Period (FY) 1994 – 1995
KeywordsIn situ monitoring / In situ gravimetric monitoring / In situ optical monitoring / Atomic layr epitaxy (ALE) / reconstruction / GaAs
Research Abstract

In situ monitoring techniques play an important role in the investigation on the atomic layr epitaxy (ALE) growth mechanism. In this research, we have investigated in situ gravimetric monitoring of ALE using metalorganic sources. The main results obtained are summarized as follows :
(1) The resistance furnace is suitable heating system for the substrate.
(2) In the short purge time, which is used for the common ALE growth, the gtowth rate is unity in each ALE cycle. However, the growth rate decreases to the constant value, 0.75, for the long purge time, which corresponds to the As coverage on a (2x4) reconstructed surface.
The gravimetric and optical in situ methods were employed in this study. These methods provides real-time information under an atmospheric pressure. In particular, the gravimetric method is a powerful tool for the investigation of the ALE mechanism.

  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] H. Ikeda: "Substitution of Surface-Absorbed As Atoms to P Atoms in Atomic Layer Epitoxy." Applied Surface Science. 82/83. 257-262 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 纐纈明伯: "GaAs原子層エピタキシ-のその場観察-グラヴィメトリック法および表面光吸収法-" 日本結晶成長学会誌. 21. 32-37 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ gravimetric Monitoring." Jpn. J. Appl. Phys.33. L613-L616 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 纐纈明伯: "ハロゲン系原子層エピタキシ-におけるGaAs成長過程のその場観察" 日本結晶成長学会誌. 21. S161-S168 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "In Situ Gravimetric Monitoring of Arsenic Desorption in GaAs Atomic Layer Epitaxy." J. Crystal Growth. 146. 239-245 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "In Situ Monitoring of the Growth Process in GaAs Atomic Layer Epitaxy by Gravimetric and Optial Methods." J. Crystal Growth. 146. 467-474 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 第9回「大学と科学」公開シンポジウム組織委員会編: "結晶成長のしくみを探る 原子レベルでの成長メカニズム" (株)クバプロ, 189 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ikeda, Y.Miura, N.Takahashi, A.Koukitu and H.Seki: "Substitution of Surface-Adsorbed As Atoms to P Atoms in Atomic Layr Epitaxy." Applied Surface Science. 82/83. 257 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koukitu, N.Takahashi, Y.Miura and H.Seki: "Determination of Surface Chemical Species in GaAs Atomic Layr Epitaxy by In Situ Gravimetric Monitoring." Jpn.J.Appl.Phys.33. L613 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koukitu, N.Takahashi, Y.Miura and H.Seki: "In Situ Gravimetric Monitoring of Arsenic Desorption in GaAs Atomic Layr Epitaxy." J.Crystal Growth. 146. 239 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koukitu, N.Takahashi and H.Seki: "In Situ Monitoring of the Growth Process in GaAs Atomic Layr Epitaxy by Gravimetric and Optical Methods." J.Crystal Growth. 146. 467 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Takahashi, H.Ikeda, A.Koukitu and H.Seki: "Vapor-Solid Distribution in In_<1-x>Ga_xAs and In_<1-x>Ga_xP Alloys Growth by Atomic Layr Epitaxy." J.Crystal Growth. 155. 27 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koukitu, N.Takahashi and H.Seki: "In Situ Monitoring of the GaAs growth Process in Halogen Transport Atomic Layr Epitaxt." J.Crystal Growth. (in press.). (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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