CHEMICAL ENGINEERING ANALYSIS AND CONTROL OF GROWTH PROCESS OF BULK SINGLE CRYSTALS FOR OPTO-ELECTRONICS DEVICES

1997 Fiscal Year Final Research Report Summary

• Project/Area Number: 07305060
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: 化学工学一般
• Research Institution: KYUSHU UNIVERSITY
• Principal Investigator: IMAISHI Nobuyuki KYUSHU UNIVERSITY INSTITUTE OF ADVANCED MATERIAL STUDY,PROFESSOR, 機能物質科学研究所, 教授 (60034394)
• Co-Investigator(Kenkyū-buntansha): HOSHIKAWA Keigo SINSHU UNIVERSITY,DEPT.OF EDUCATION,PROFESSOR, 教育学部, 教授 (10231573) ; KUMAGAWA Masasi SHIZUOKA UNIVERSITY,RES.INST.ELECTRONICS,PROFESSOR, 電子工学研究所, 教授 (30022130) ; TSUKADA Takao TOHOKU UNIVERSITY,RES.INST.CHEMICAL REACTION,ASSOCIATE PROFESSOR, 反応化学研究所, 助教授 (10171969) ; HIRATA Akira WASEDA UNIVERSITY,DEPT.APPLIED CHEMISTRY,PROFESSOR, 理工学部, 教授 (00063610) ; OZOE Hiroyuki KYUSHU UNIVERSITY INSTITUTE OF ADVANCED MATERIAL STUDY,PROFESSOR, 機能物質科学研究所, 教授 (10033242)
• Project Period (FY): 1995 – 1997
• Keywords: Single Crystal Growth / Numerical Analysis / Transport Phenomena / Melt Convection / Flow Control / Thermal Stress / Thermo-Physical Properties of Melts / Marangoni Convection

Research Abstract

This project aimed to establish scientific fundamentals of bulk single crystal growth for opto-electronics devices. Czochralski process for semiconductor and oxide crystals have been analyzed experimentally and numerically.
Gas phase transport phenomena was numerically investigated and a device was proposed to increase mass transfer rate of SiO.Fluid flow and heat transfer in melt pool was numerically analyzed and the application of magnetic field was revealed effective to control the oscillatory melt flows. Effect of buoyancy and thermocapillary forces on melt flow of compound semiconductors was analyzed experimentally and numerically. Thermal stress analysis and dislocation kinetic model was combined to predict dislocation density in semiconductor single crystals.
Global analysis code was developed for a RF heated Czochralski furnace for oxide crystal growth. The code has been effectively used to optimize the structure and operation of the furnace. The temperature distributions thus obtained was used to thermal-stress and crack formation analyzes. Thermo-physical properties of some oxide melts have been measured.

Research Products

• [Publications] Y.Okano: "Effect of growth atmosphere on convection in LiTaO_3 melt" J.Materials processing & Manufacturing Science. Vol.4. 41-44 (1995)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Masuda: "Numerical simulation of heat transfer in floating zone single crystal growth process with radio-frequency induction heating." Int.J.Heat Mass Transfer. Vol.39. 3035-3043 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Hayakawa: "Rapid Diffusion of Ga into InSb and Precipitation of In" J.Crystal Growth. Vol.163. 220-225 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Hayakawa: "Effect of Ampoule Rotation on Growth of InGaAsa Ternary Bulk Crystals from Solution" Crystal Research and Technology. Vol.31. 567-575 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] W.Hu: "Diffusion dominated process for the crystal growth of a binary alloy" J.Crystal Growth. Vol.169. 380-392 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 平田 彰: "濃度差マランゴニ対流に基づく多元系化合物半導体融液の均一分散・混合化" 日本マイクログラビティ応用学会誌. Vol.13. 165-170 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K.Okitsu: "Gravitational Effecta on Mixing and Growth Morphology of an In0.5Ga0.5Sb system" Crystal Research and Technology. Vol.31. 969-978 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T.Ozawa: "InGaAs Mixed Cryatals Grown by the Temparature-Diffrence Method and the Numerical Analysis of Solution Convection" J.Crystal Growth. Vol.166. 463-468 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] S.Yasuhiro: "Numerical Simulation of solutal Marangoni convection during liquid mixing under microgravity" Microgravity Science and Technology. Vol.9. 237-244 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 岩本 光生: "Cz法融液対流に関する融液深さの影響" 化学工学シンポジウムシリーズ. Vol.51. 44-50 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 岩本 光生: "Cz法振動流に対するルツボ温度分布の影響"" 化学工学シンポジウムシリーズ. Vol.52. 51-56 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] N.Miyazaki: "Quantiative assesment for cracking in oxide bulk single crystals during Czochralski growth:Development of a computer program for thermal stress analysis" J.Crystal Growth. Vol.162. 83-88 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] A.Ikari: "Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon" J.Materials Science and Engineering. Vol.B36. 42-45 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.Kumagawa: "Rapid and High Concentrated Permeation of Ga into InSb" J.Material Science and Engineering. Vol.B44. 301-303 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K.Okitsu: "Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity" Japanese J.Applied Physics. Vol.36. 3613-3619 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 宮崎 則幸: "半導体バルク単結晶CZ育成過程における転位密度評価" 日本機械学会論文集(A編). Vol.63,No.607. 636-642 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] N.Miyazaki: "Thermal shock craccking of lithium-niobate single crystal" J.Materials Science : Materials in Electronics. Vol. 8. 133-138 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] 宮崎 則幸: "GSO単結晶の熱応力解析" 日本機械学会論文集(A編). Vol.63,No.612. 1744-1749 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.Kobayashi: "Effect of internal radiation heat transfer on the convection in CZ oxide melt" J.Crystal Growth. Vol.180. 157-166 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T.Tsukada: "Numerical and experimental studies on crack formation in LiNbO_3 single crystal" J.Crystal Growth. Vol.180. 543-550 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] S.Maeda: "Analysis of deposits evaporated from boron-doped silicon melt" Japanese.J.Applied Physics,Part 2. Vol.36 No.8. L971-L974 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Keigo Hoshikawa: "Oxygen concentration control and magnetic field application technologies in Czichralski silicon crystal growth" Trends in Materials Science TiMs-97. 163-174 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K.Arafune: "Investigation of steady Marangoni convection in low and high prandtl number fluids" J.Chemical Engineering of Japan. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K.Abe: "Oxygen solubility in Si melts;the influence of carbon addition" J.Electrochemical Society. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] N.Nakanishi: "The ring depression technique for measuring surface tension of molten germanium" J.Crystal Growth. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] X.Huang: "Analysis on Oxygen dissolution process concerning with CZ Si crystal growth by sessile drop method" Japanese J.Applied Physics. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] X.Huang: "Analysis on Oxygen evaporation rate and dissolution rate concerning with CZ Si crystal growth:Effect of Ar pressure" Japanese J.Applied Physics. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.Machida: "The effect of argon gas fiow rate and furnace pressure on oxygen concentration in transverse magnetic field applied Czochralski grown silicon crystals" J.Crystal Growth. (印刷中). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.Iwamoto: "The oscillatory convection in the melt of Czochralski crystal growth" 3rd KSME-JSME Thermal Eng.Conf.,'96-Kyongju(Kyongju, Korea). Vol.2. 83-86 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Shimabukuro: "Numerical computation for the Czochralski momentum, heat and mass transfer under a cusp-shaped magnetic field" Proc.3rd Int.Thermal Energy Congress(Kitakyushu). 221-227 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Takao: "Numerical and experimental studies on crack formation in LiNbO_3 single crystal" 2nd Int.Workshop on Modeling in Crystal Growth(Durby, Belgium). (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.Akamatsu: "Effect of crucible rotation on the melt convection and the structure in a Czochralski method" Proc.Transport Phenomena in Thermal Science and Process Engineering. Vol.3. 637-642 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Keigo Hoshikawa: "Control of oxygen concentration in Czochralski silicon crystal growyh by a cusp magnetic field" Pro.2nd Int.Symp.Advanced Sci.Techn.Silicon Materials(Kona,Hamaii,USA). 85-94 (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Noriyuki Miyazaki: "Dislocation density analyses of bulk semiconductor crystals growth using dislocation kinetics model" 3rd Asia-Pacific Symp. Advances in Engineering Plasticity and its Applications AEPA'96,(Hiroshima). (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Noriyuki Miyazaki: "Thermal stress analyses of GSO bulk single crystal" Int.Conf.on Computational Engineering Science(San Jose,Costa Rica). (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Noriyuki Miyazaki: "Dislocation density analyses of bulk semiconductor single crystals during Czochralski growth" Int.Conf.on Computational Engineering Science,(San Jose,Costa Rica). (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Masasi Kumagawa: "Rapid and High Concentrated Permeation of Ga into InSb" 3rd Int.Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies,(Freiburg,Germany). (1996)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Hayakawa: "Melting and Solidification of In/GaSb/Sb Combinations under Microgravity" 4th Japan-Canada Joint Workshops-Fluid and Material in Microgravity(Kyoto). (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T.Ozawa: "Computational Analysis of Growth Rate for InGaAs Mixed Semiconductors Grown by Temperature Gradient Method"" In.Conf.on Computational Engineering Science(San Jose,Costa Rica). (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y.Hayakawa: "Melting and Solidification of Semiconductors under Microgravity" Proc.JISCAST'97(Jointo Int.Conf.on Advanced Sci.and Techn.)(China). 99-102 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] X.Xie: "The Programmable Multiple Zone and Power Shifting Integrated Furnace and Big-diameter GaAs Crystal Growth Experiment Piggybacked on Satellite" Proc.48th Int.Astronautical Congress(Turin,Italy). 1-14 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Yasunori Okano: "Convective Phenomena in Melt during In SbSingle Crystal Growth by RF Heating Czochralski Method" Proc.47th Canadian Cemical Engineering Conference,(Edmonton,Alberta,Canada. 733 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Yasunori Okano: "Transient analysis of transport phenomena in bulk single crystal growth by the liquid encapusulated vertical gradient freezing(LE-VGF)method" Int.Conf.Computational Engineering Science(San Jose,Costa Rica). 232-237 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Yasunori Okano: "Investigation of Steady Marangoni convection in low and high Prandtl number fluids" 16^<th> Canadian Congress of Applied Mechanics(CANCAM97)(Quebec,Canada). (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] X.Huang: "A study of the oxygen dissolution process from silica to silicon melt" Electro Chemical Society,Spring Meeting(San Diego). (発表予定). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] S.Sakai: "Measurement of oxygen dissolution rate from silica glass to silicon melt with sessile drop method" Electro Chemical Society, Spring Meeting ( San Diego ). (発表予定). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] S.Sakai: "Oxygen dissolution rate from various kinds of silica glasses to silicon melt by silicon sessile drop method" Int.Conf.Crystal Growth-12,(Jersalem,Israel). (発表予定). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Kouiti Terashima: "Influence of boron addition into solicon melts on oxygen atom behavior in Cz pulling system" CCS Silicon Symposium. (発表予定). (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Masuda, M., T.Tsukada, M.Hozawa and N.Imaishi: "Numerical simulation of heat transfer in floating zone single crystal growth process with radio-frequency induction heating." Int.J.Heat Mass Transfer. Vol.39, No.14. 3035-3043 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okano, Y., Y.Tsuji, D.H.Yoon and T.Fukuda: "Effect of growth atmosphere on convection in LiTa_3, melt" J.Materials Processing & Manufacturing Science. vol.4. 41-44 (1995)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hayakawa, Y., E.Hamakawa, T.Koyama & M.Kumagawa: "Repid Diffusion of Ga into InSb and Precipitation of In" J.Crystal Growth. vol.163 [3]. 220-225 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hayakawa, Y., T.Ozawa, M.Ando, T.Koyama, M.Masaki, K.Takahashi & M.Kumagawa: "Effect of Ampoule Rotation on Growth of InGaAsa Ternary Bulk Crystals from Solution"" Cryst.Res.Technol. vol.31 [5]. 567-575 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] W.Hu, A.Hirata, , S.Nishizawa: "Diffusion dominated process for the crystal growth of a binary alloy" J.Crystal Growth. vol.169. 380-392 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hirata, A., K.Arafune, S.Fujiwara, M.Kumagawa, Y.Hayakawa, K.Okitsu, N.Imanishi, S.Yasuhiro, Y.Okano, S.Sakai, T.Osaka, S.Yoda and T.Oida: "Mixing of multi-component semiconductor melts by solutal Marangoni effect" J.Japan Society of Micro Gravity Application. vol.13 [3]. 165-170 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okitsu, K., Y.Hayakawa, A.Hirata, S.Fujiwara, Y.Okano, N.Imaishi, S.Yoda, T.Oida, T.Yamaguchi, M.Kumagawa: "Gravitational Effecta on Mixing and Growth Morphology of an In0.5Ga0.5Sb system"" Cryst.Res.Technol.vol.31 [8]. 969-978 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Ozawa, T., M.Ando, Y.Hayakawa & M.Kumagawa: "InGaAs Mixed Cryatals Grown by the Temparature-Diffrence Method and the Numerical Analysis of Solution Convection"" J.Cryst.Growth. vol.166. 463-468 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Yasuhiro.S., T.Sato, N.Imaishi, A.Hirata & M.Kumagawa: "Numerical simulation of solutal Marangoni convection during liquid mixing under microgravity"" Microgravity Sci.Technology. vol.IX/4. 237-244 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Iwamoto, M., S.Shinnmyo, M.Nagai, H.Fukui, H.Ozoe: "Effect of melt depth on melt convection in Cz method" Chemical Engineering Symp.Series. No.51. 44 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Iwamoto, H.Tagami, M.Nagai, H.Fukui, H.Ozoe, T.Fukuda, S.Tozawa: "Effect of temperature distribution on melt flow in Cz method" Chemical Engineering Symp.Series. No.52. 51-56 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N., H.Uchida, .T.Tsukada & T.Fukuda: "Quantitative assessment for cracking in oxide bulk single crystals during Czochralski growth : Development of a computer program for thermal stress analysis"" J.Cryst.Growth. vol.162. 83-88 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Ikari, A., H.Sasaki, E.Tokizaki, K.Terashima, S.Kimura: "Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon" J.Materials Science and Engineering. B36. 42-45 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Kumagawa, M., H.Ohtsu, E.Hamakawa, T.Koyama, M.Masaki, K.Takahashi, V.G.Lifshits & Y.Hayakawa: "Repid and High Concentrated Permeation of Ga into InSb" J.Materials Science and Engineering. vol.B44. 301-303 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okitsu, K., Y.Hayakawa, T.Yamaguchi, A.Hirata, S.Fujiwara, Y.Okano, N.Imaishi, S.Yoda, T.Oida and M.Kumagawa: "Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity"" Jpn.J.Appl.Phys.vol.B36. 3613-3619 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N.and S.Okuyama: "Evaluation of dislocation density during Cz growth of semiconductor crystals" Trans.JSME,Part A. vol.63 No.607. 636-642 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N., A.Hattori & H.Uchida: "Thermal shock craccking of lithium-niobate single crystal" J.Materials Science : Materials in Electronics. vol.18. 133-138 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N., T.Tamura, K.Kurashige, H.Ishibashi, H.Susa: "Thermal stress analysis of GSO single crystals" Trans.JSME,Part A. vol.63, No.612. 1744-1749 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Kobayashi, M., T.Tsukada and M.Hozawa: "Effect of internal radiation heat transfer on the convection in CZ melt"" J.Crystal Growth. vol.180. 157-166 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Tsukada T., K.Kakinoki, M.Hozawa, N.Imaishi, K.Shimamura and T.Fukuda: "Numerical and experimental studies on crack formation in LiNbO_3 single crystal"" J.Crystal Growth. vol.180. 543-550 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Maeda, S., M.Kato, K.Abe, H.Nakanishi, K.Hoshikawa, and K.Terashima: "Analysis of deposits evaporated from boron-doped silicon melt" Jpn.J.Apple.Physics. vol.36, Part 2, No.8. L971-L974 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Maeda, S., M.Kato, K.Abe, H.Nakanishi, K.Hoshikawa, and K.Terashima: "Temperature variations of the surface of a silicon melt due to evaporration of chemical species, 1.Antimony addetion" J.Electrochem.Soc.vol.144. 3185 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Abe, K., T.Matsumoto, S.Maeda, H.Nakanishi, K.Hoshikawa, and K.Terashima: "Oxygen solubility in Si melts ; influence of boron addition" J.Crystal Growth. vol.181. 41-47 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okano, Y., S.kunitaka, T.fujioka, S.Sakai and M.Koyama: "Axisymmetric two-dimensional steady Marangoni convection in a floating half-zone under microgravity condition"" Numerical Heat Transfer, Part A. vol.31. 407-418 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hoshikawa, K.: "Oxygen concentration control and magnetic field application technologies in Czochralski silicon crystal growth" Trends in Materials Science TiMS-97. 163-174 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Abe, K., T.Matsumoto, S.Maeda, H.Nakanishi, and K.Terashima: "Oxygen solubility in Si melts ; the influence of carbon addition" J.Electorochem.Soc.(in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Nakanishi, H., K.Nakazato, K.Abe, S.Maeda, and K.Terashima: "The ring depression technique for measuring surface tension of molten germanium" J.Crystal Growth. (in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Huang, X., K.Saitou, S.Sakai, K.Terashima, and K.Hoshikawa: "Analysis on oxygen dissolution process concerning with CZSi crystal growth by sessile drop method" Jpn.J.Apple.Phys.(in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Huang, X., S.Saitou, S.Sakai, K.Terashima, and K.Hoshikawa: "Analysis on oxygen evaporation rate and dissolution rate concerning with CZ Si crystal growth : Effect of Ar pressure"" Jpn.J.Appl.Phys.(in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Machida, M., K/Hoshikawa, and Y.Shimizu: "The effect of argon gas flow rate and furnace pressure on oxygen concentration in transverse magnetic field applied Czochralski grown silcon crystals" J.Cryst. Growth. (in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Arafune, K., M.Sugiura and A.Hirata: "Investigation of steady Marangoni convection in low-and high Prandtl number fluids" J.Chem.Eng.Japan. (in press).
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Tsukada T., K.Kakinoki, M.Hozawa, N.Imaishi, K.Shimamura and T.Fukuda: "Numerical and experimental studies on crack formation in LiNbO_3 single crystal" 2nd Int.Workshop on Modelling in Crystal Growth. (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Iwamoto, M., H.Ozoe, T.Obata, M.Akamatsu, T.Fukuda and S.Tozawa: "The oscillatory convection in the melt of Czochralski crystal growth" 3rd KSME-JSME Thermal Eng.Conf., '96-Kyongju, Kyongju, Korea. Vol.2. 83-88 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Shimabukuro, Y., T.Tagawa, K.Kakimoto, and H.Ozoe: "Numerical computation for the Czochralski momentum, heat and mass transfer under a cuspshaped magnetic field" 3rd Int.Thermal Energy Congress, Kitakyushu. 221-227 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Akamatsu, M., K.Kakimoto and H.Ozoe: "Effect of crucible rotation on the melt convection and the structure in a Czochralski method" Transport Phenomena in Thermal Science and Process Engineering. Vol.3. 637-642 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hoshikawa, K.and H.Hirata: "Control of oxygen concentration in Czochralski silicon crystal growth by a cusp magnetic field" Proc.2nd Int.Symp.Advanced Sci.Techn.Silicon Materials (Kona, Hawaii, USA). 85-94 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N.& S.Okuyama: "Dislocation density analyzes of bulk semiconductor crystals growth using dislocation kinetics model, The 3rd Asia-Pacific Symp.Advances in Engineering Plasticity and its Applications AEPA '96" Proc.appeared in " Advances in Engineering Plasticity and its Applications, Eds by T.Abe and T.Tsuta" Hiroshima, Japan. 513-518 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N.& T.Tamura: "Thermal stress analyzes of GSO bulk single crystal" Int.Conf.on Computational Engineering Science, Proc.appeared in "Advances in Computational Engineering Science, Eds by S.N.Atluri and G.Yagawa"p.250, San Jose, Costa Rica. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Miyazaki, N.& S.Okuyama: "Dislocation density analyzes of bulk semiconductor single crystals during Czochralski growth"" Int.Conf.on Computational Engineering Science, Proc.appeared in "Advances in Computational Engineering Science, Eds by S.N.Atluri and G.Yagawa"pp.262-267, San Jose, Costa Rica. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Ozawa, T., M.Ando, Y.Hayakawa & M.Kumagawa: "Effect of Temperature Gradient on InGaAs Crystal Growth and its Numerical Analysis" Int.Symp.on Surfaces and Thin Films of Electronic Materials, Proc.in "Special Issue of the Bulletin of the Research Institute of Electronics, Shizuoka University". vol.30 [3]. 131-134 (1995)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hayakawa, Y., H.Ohsawa, H.Nakano, T.Koyama, M.Masaki, K.Takahasi, A.Muller, B.Dedavid, C.Eleani & M.Kumagawa: "Anormalous Segregation of Al during Growth of Al-doped GaSb" Int.Symp.on Surfaces and Thin Films of Electronic Materials, Proc.in "Special Issue of the Bulletin of the Research Institute of Electronics, Shizuoka University" Hamamatsu. vol.30 [3]. 135-138 (1995)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Kumagawa, M., E.Hamakawa, H.Ohtsu, T.Koyama, M.Masaki, K.Takahasi, V.G.Lifshits & Y.Hayakawa: "Rapid and High Concentrated Permeation of Ga into InSb" 3rd Int.Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Freiburg, Germany. (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hayakawa, Y., A.Hirata, Y.Okano, N.Imaishi, K.Okitsu, K.Arafune, S.Yoda, T.Oida & M.Kumagawa: "Melting and Solidification of In/GaSb/Sb Combinations under Microgravity" The 4th Japan-Canada Joint Workshops-Fluid and Material in Microgravity-, pp207-212, Kyoto. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Ozawa, T., Y.Hayakawa, H.Ono, T.Koyama & M.Kumagawa: "Computational Analysis of Growth Rate for InGaAs Mixed Semiconductors Grown by Temperature Gradient Mcthod." In.Conf.on Computational Engineering Science, Proc.in"Advances in Computational Engineering Science, ed.by S.N.Atluri and G.Yagawa"p.238, San Jose, Costa Rica. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Hayakawa, Y., A.Hirata, K.Okitsu, T.Yamaguchi, Y.Okano, N.Imaishi, S.Yoda, T.Oida & M.Kumagawa: "Melting and Solidification of Semiconductors under Microgravity, Joint Int.Conf.on Advanced Sci.and Techn.by Shizuoka University and Zhejiang University" Proc.appeared in "Proc.JISCAST' 97"pp.99-102.Republic of China. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Xie, X., X.Risheng, Z.Tao, Z.Liehua, H.Xiaowen, Y.Xiaohui, M.Lin, L.Lanying, Z.Xingru, C.Jiagui, F.Ji, C.Ruidong, B.Yingjun, Z.Guagjie, A.Hirata, Y.Okano, M.Kumagawa, Y.Hayakawa, Y.Kumagiri & B.Yuan: "The Programmable Multiple Zone and Power Shifting Integrated Furnace and Big-diameter GaAs Crystal Growth Experiment Piggybacked on Satellite" 48th Int.Astronautical Congress, Proc.appeared in "Proc.48th Int.Astronautical Congress"pp.1-14, Turin, Italy. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okano, Y., K.Yamamoto, Y.Hayakawa & M.Kumagawa: "Convective Phenomena in Melt during InSb Single Crystal Growth by RF Heating Czochralski Method" 47th Canadian Cemical Engineering Conference, 733, Edmonton, Alberta, Canada. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okano, Y., S.Kunikata, S.sakai, T.Fujioka, A.Hirata, M.Sakurai, M.Koyama, and T.Morita: "Numerical and experimental study on Marangoni convection in a floating zone under microgravity field Int.Conf.Computational Engineering Science, San Jose, Costa Rica, 1997" Proc.appeared in "Advances in Comput.Eng.Sci.232-237 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Okano, Y., T.Morita, and S.Sakai: "Transient analysis of transport phenomena in bulk single crystal growth by the liquid encapusulated vertical gradient freezing (LE-VGF) method" Proc.16^<th> Canadian Congress of Applied Mechanics (CANCAM97), Quebec. (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Huang, X., K.Saitou, S.Sakai and K.Hoshikawa: "A study of the oxygen dissolution process from silica to silicon melt" ECS Spring Meeting, May 1998 in San Diego.
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Sakai, S., X.Huang, K.Saitou, Y.Okano and K.Hoshilkawa: "Measurement of oxygen dissolution rate from silica glass to silicon melt with sessile drop method" ECS Spring Meeting, May 1998 in San Diego.
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] S.Sakai, X.Huang, K.Saitou, Y.Okano, S.Ohishi and K.Hoshikawa: "Oxygen dissolution rate from various kinds of silica glasses to silicon melt by silicon sessilc drop method" ICCG-12, June 1998 in Jersalem.
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Terashima, K., K.Abe, S.Maeda, and H.Nakanishi: "Influence of boron addition into solicon melts on oxygen atom behavior in Cz pulling system" CCS Silicon Symposium, May 1998.
  • Description: 「研究成果報告書概要(欧文)」より