1996 Fiscal Year Final Research Report Summary
Molecular Beams Study of Elementary Processes and Dynamcs of Surface Reactions over the Surfaces of Catalysts and Semiconductor Materials
| Project/Area Number |
07404033
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical chemistry
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| Research Institution | NAGOYA UNIVERSITY |
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Principal Investigator |
SHOBATAKE Kosuke Nagoya Univ., Graduate School of Engineering Professor, 工学部, 教授 (60132726)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Toyoaki Nagoya Univ.Graduate School of Engineering, Research Associate, 工学部, 助手 (70106631)
SAWABE Kyoichi Nagoya Univ.Graduate School of Engineering, Assistant Professor, 工学部, 講師 (80235473)
HATTORI Tadashi Nagoya Univ.Graduate School of Engineering, Professor, 工学部, 教授 (50023172)
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| Project Period (FY) |
1995 – 1996
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| Keywords | Molecular beam technique / etching reactions / synchrotron radiation / Catalysis / velocity distributions / solid surfaces / chemical reaction dynamics / semiconductor surfaces |
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| Research Abstract |
(1) We have installed a LEED instrument purchased from OCI Vacuum Engineering (Model : No.BDL600) to a molecular beam-surface scattering apparatus to study surface reactions on solid surfaces of catalysts and semiconductor materials as well as scattering processes of velocity-selected beam molecules from solid surfaces under ultrahigh vacuum conditions. (2) We have also installed a load-lock chamber which enables exchange of samples under ultrahigh vacuum. (3) We have studied scattering processes of O_2, Xe, Kr, Ar, Ne, SF_6 from graphite by measuring the angular and velocity distributions of the scattered species using a TOF technique. (4) We have also studied reactive scattering processes of hyperthermal Cl_<> molecules with Si (111) surface. Especially we have measured the reaction rate as a function of Cl_2 collision energy and surface temperature and found that the etch rate increases with collision energy above 1.2 eV.(5) Synchrotron radiation (SR)excited etching of Si (100) with XeF_<> has been studied using a time-of-flight (TOF) technique combined with electron bombardment ionization mass spectrometry as well as temperture desorption spectroscopy. We have discussed the effect of illumination of SR in the etching reaction. (6) We have also succeeded in SR-excited etching of diamond surface and obtained some idea about the mechanism for this reactions. (7) We have studied the laser-excited photochemical processes of molecules adsorbed on metal surfaces.(8) We have also studied the relations between the chemical reactivities of catalyst surfaces and their surface states.
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[Publications] H.Yoshikawa, H.Ohashi, K.Tabayashi, M.Suzui, T.Horigome, K.Hayasaka, S.Kato, K.Shobatake, K.Ito, and T.Fujimoto: ""Modification of a high vacuum, crossed molecular beam scattering system to perform angle-resolved, gas-surface scattering studies under ultrahigh vacuum conditions."" submitted to Rev.Sci.Instrum.
Description
「研究成果報告書概要(欧文)」より
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[Publications] K.Shobatake, K.Ito, H.Yoshikawa, T.Ogi, H.Ariga, H.Ohashi, and T.Fujimoto: ""Dynamics and Energy Transfer in Scattering of Xe, O_2 and Cl_2 from Graphite Surface ; "" in Springer Series in Solid-State Sciences, Volume 121, Elementary Processes in Excitations and Reactions on Solid Surfaces, Eds. : A.Okji, H.Kasai, and K.Makoshi, (springer-Verlag, Berlin Heidelberg, 1996). 112-121
Description
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