1996 Fiscal Year Final Research Report Summary
Development of MOS Capacitor Dissolved Oxygen Sensor for Use in High-Temperature Solutions
Project/Area Number |
07555214
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 試験 |
Research Field |
Material processing/treatments
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Research Institution | TOHOKU UNIVERSITY |
Principal Investigator |
HARA Nobuyoshi Faculty of Engineering, Tohoku University Associate professor, 工学部, 助教授 (40111257)
|
Co-Investigator(Kenkyū-buntansha) |
AKAO Noboru Faculty of Engineering, Tohoku University Research assistant, 工学部, 助手 (80222503)
SUGIMOTO Katsuhisa Faculty of Engineering, Tohoku University Professor, 工学部, 教授 (80005397)
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Project Period (FY) |
1995 – 1996
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Keywords | Dissolved oxygen sensor / High temperature aqueous solution / MOS capacitor / EOS capacitor / Corrosion potential |
Research Abstract |
New dissolved oxygen sensors based on metal-oxide-semiconductor (MOS) and electrolyte-oxide-semiconductor (EOS) devices have been developed for the measurement of oxygen concentration in high-temperature and high-pressure aqueous solutions. The results are summarized as follows ; 1. The system that can be served for the measurement of response characteristics of MOS and EOS capacitor sensors at elevated temperatures was designed and constructed. 2. Pt-PtO_x electrodes displayd a rapid response to changes in O_2 concentration and had a high resistance against corrosion at elevated temperatures. 3. The porous Pt-MOS capacitor sensor fabricated using a single crystal silicon as a semiconductor showed a linear relationship between the response voltage and log [DO concentration] at temperatures of 303-363K.However, this sensor suffered from cracking at temperatures above 423K. 4. The Pt-EOS sensor combining a bulk Pt electrode with a semiconductor electrode of TiO_2 single crystal displayd the same DO response characteristics as the Pt-MOS sensor, and had a good stability even at temperatures above 423K. 5. Calibration curves, which provide the relationships between the DO concentration and the response voltage of the Pt-EOS sensor, were obtained.
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Research Products
(2 results)