1995 Fiscal Year Annual Research Report

Si系超格子デバイス作製のための原子制御CVD装置の開発研究

Research Project

Project/Area Number	07555409
Research Category	Grant-in-Aid for Developmental Scientific Research (B)
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	澤田康次東北大学, 電気通信研究所, 教授 (80028133) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	原子制御CVD装置 / Si系超格子デバイス / 瞬時加熱CVD法 / プラズマ表面処理 / 超微細MOSFET / ド-ピング制御 / W低温選択成長 / Si極薄窒化膜
Research Abstract	本研究では、申請者らの開発してきた瞬時加熱CVD法とプラズマによる表面処理を組み合わせて、成膜時に異種元素の原子層間での混合が生じない原子層成長技術を完成させ、Si系超格子デバイス作製に適用することを目的としている。本年度は、3年計画の初年度としてマイクロ波励起型プラズマ照射装置とターボ分子ポンプを組み込んだ超高清浄原子制御CVD装置の組み上げを進めると同時に、SiH_4とGeH_4を用いてSiとGeを一原子層単位で制御したエピタキシャル成長を行い、ESCA、RHEED,FTIRにより評価した。また、Si_<1-x>Ge_xエピタキシャル成長中のBやPのド-ピング制御を原子レベルの吸着モデルで説明し、その選択成長を用いて超微細MOSFETの製作プロセスを研究した。さらに、WF_6-SiH_4系を用いたSi表面へのWの低温選択成長や、NH_3を用いた低温での極薄Si窒化膜の形成について研究した。その結果、1)300℃以下の低温でGe上にSiH_4を用いてSiの一原子成長が可能である、2)Si_<1-x>Ge_xエピタキシャル成長中のBやPのド-ピング過程が表面での原子レベルの吸着ボンドサイトを仮定したモデルで説明できる、3)実寸法と実効チャネル長のほぼ等しい自己整合型極浅接合ソース/ドレイン層を持つ超微細MOSFETを製作した、4)Si表面を一旦300-500℃に前加熱すればWF_6-SiH_4系を用いて100-200℃の低温でもSi上にWを選択成長できる、5)400℃以下の低温においてもNH_3雰囲気中で極薄Si窒化膜が形成される、等を明らかにした。なお、これらの成果は、裏面記載の論文等で発表済み、及び発表予定であり、さらに次年度の研究計画に発展するものである。

Research Products

(13 results)

All Other

All Publications (13 results)

[Publications] J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, and Y. Sawada: "Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD" J. de Physique IV. C5. 1101-1108 (1995)
[Publications] J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura,and Y. Sawada: "Low-Temperature Epitaxial Growth Mechanism of Si_<1-x>Ge_x Films in the Silane and Gemanium Reactions" J. de Physique IV. C5. 1165-1172 (1995)
[Publications] K. Goto, J. Murota, F. Honma, T. Matsuura, and Y. Sawada: "A Super Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD in Deep-Submicron MOSFET's Fabrication" Proceedings of the 5th International Symposium on Ultra Large Scale Integration Science and Technology. 95-5. 512-518 (1995)
[Publications] K. Goto, J. Murota, F. Honma, T. Mutsuura, and Y. Sawada: "A Super Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD in Deep-Submicron MOSFET's Fabrication" The Electrochemical Society Extended Abstracts, Spring Meeting. 538-539 (1995)
[Publications] H. Fujimoto, J. Murota, Y. Takasawa, K. Goto, T. Matsuura and Y. Sawada: "In-Situ Doping Control of P and B in Si_<1-x>Ge_x Epitaxial Growth by CVD" 13th International Vacuum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM3-tuA-7 (1995)
[Publications] T. Watanabe, M. Sakuraba, J. Murota, T. Matsuura and Y. Sawada: "Single Atomic-Layer Growth of Si on Ge Using SiH_4" 13th International Vaccum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM3-tuA-8 (1995)
[Publications] Y. Yamamoto, J. Murota, K. Tsukahara and Y. Sawada: "Low-Temperature Selective Growth of W Using an LPCVD System" 13th International Vacum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM5-weA-6 (1995)
[Publications] J. Murota, M. Sakuraba, T. Watanabe and T. Matsuura: "Single Atomic-Layer Growth Control in Si/Ge Heteroepitaxy by CVD Using SiH_4 and GeH_4 Gases" Spring Meeting, Materials Research Society. (印刷中). (1996)
[Publications] J. Murota, H. Fujimoto, Y. Takasawa, M. Ishii, K. Goto and T. Matsuura: "Mechanism of Si_<1-x>Ge_x Growth and P and B Doping in Low-Temperature Expitaxy by CVD" Spring Meeting, Materials Research Society. (印刷中). (1996)
[Publications] T. Watanabe, M. Sakuraba, T. Matsuura, and J. Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" 13th International Conference on Chemical Vapor Deposition. (印刷中). (1996)
[Publications] T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" The Electrochemical Society Extended Abstracts. (印刷中). (1996)
[Publications] Y. Yamamoto, T. Matsuura, and J. Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" 13th International Conference on Chemical Vapor Deposition. (印刷中). (1996)
[Publications] Y. Yamamoto, T. Matsuura, and J. Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" The Electrochemical Society Extended Abstracts. (印刷中). (1996)

1995 Fiscal Year Annual Research Report

Si系超格子デバイス作製のための原子制御CVD装置の開発研究

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, and Y. Sawada: "Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD" J. de Physique IV. C5. 1101-1108 (1995)

[Publications] J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura,and Y. Sawada: "Low-Temperature Epitaxial Growth Mechanism of Si_<1-x>Ge_x Films in the Silane and Gemanium Reactions" J. de Physique IV. C5. 1165-1172 (1995)

[Publications] K. Goto, J. Murota, F. Honma, T. Mutsuura, and Y. Sawada: "A Super Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD in Deep-Submicron MOSFET's Fabrication" The Electrochemical Society Extended Abstracts, Spring Meeting. 538-539 (1995)

[Publications] H. Fujimoto, J. Murota, Y. Takasawa, K. Goto, T. Matsuura and Y. Sawada: "In-Situ Doping Control of P and B in Si_<1-x>Ge_x Epitaxial Growth by CVD" 13th International Vacuum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM3-tuA-7 (1995)

[Publications] T. Watanabe, M. Sakuraba, J. Murota, T. Matsuura and Y. Sawada: "Single Atomic-Layer Growth of Si on Ge Using SiH_4" 13th International Vaccum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM3-tuA-8 (1995)

[Publications] Y. Yamamoto, J. Murota, K. Tsukahara and Y. Sawada: "Low-Temperature Selective Growth of W Using an LPCVD System" 13th International Vacum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM5-weA-6 (1995)

[Publications] J. Murota, M. Sakuraba, T. Watanabe and T. Matsuura: "Single Atomic-Layer Growth Control in Si/Ge Heteroepitaxy by CVD Using SiH_4 and GeH_4 Gases" Spring Meeting, Materials Research Society. (印刷中). (1996)

[Publications] J. Murota, H. Fujimoto, Y. Takasawa, M. Ishii, K. Goto and T. Matsuura: "Mechanism of Si_<1-x>Ge_x Growth and P and B Doping in Low-Temperature Expitaxy by CVD" Spring Meeting, Materials Research Society. (印刷中). (1996)

[Publications] T. Watanabe, M. Sakuraba, T. Matsuura, and J. Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" 13th International Conference on Chemical Vapor Deposition. (印刷中). (1996)

[Publications] T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" The Electrochemical Society Extended Abstracts. (印刷中). (1996)

[Publications] Y. Yamamoto, T. Matsuura, and J. Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" 13th International Conference on Chemical Vapor Deposition. (印刷中). (1996)

[Publications] Y. Yamamoto, T. Matsuura, and J. Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" The Electrochemical Society Extended Abstracts. (印刷中). (1996)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)