1996 Fiscal Year Annual Research Report

Si系格子デバイス作製のための原子制御CVD装置の開発研究

Research Project

Project/Area Number	07555409
Section	試験
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	澤田康次東北大学, 電気通信研究所, 教授 (80028133) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	原子制御CVD装置 / Si系超格子デバイス / 瞬時加熱CVD法 / プラズマ表面処理 / 極微細デバイス / 不純物ド-ピング / W低温選択成長 / Langmuir型吸着
Research Abstract	本研究では、申請者らの開発してきた瞬時加熱CVD法とプラズマによる表面処理を組み合わせて、成膜時に異種元素の原子層間での混合が生じない原子層成長技術を完成させ、Si系超格子デバイス作製に適用することを目的としている。本年度は3年計画の第2年度として、SiやGe表面の水素終端とその原子オーダ製膜過程への影響、Si_<1-x>Ge_xエピタキシャル成長中のBやPの高濃度ド-ピング、極微細MOSFET作製プロセス、WF_6-SiH_4系を用いたSi表面へのWの低温選択成長や、NH_3を用いた低温での極薄Si窒化膜の形成を中心に研究した。 SiとGeの-原子層ずつの成長は、Si及びGe表面の水素終端をpreheat法により制御してフラッシュ光照射による瞬時加熱を併用することにより可能にし、SiH_4やGeH_4の吸着量がLangmuir型吸着・脱離平衡で表され表面吸着点密度が表面原子密度に等しい条件があることを明らかにした。また、NH_3による300〜500°Cでの一原子層熱窒化を実現し、CH_4による600°CでのSi表面一原子層炭化の可能性を示した。極微細デバイス製作プロセスの研究では、不純物ドープSiGe混晶の選択エピタキシャル成長層をソース・ドレイン層とする新しいMOSFET製作プロセスを提案し、ゲート電極寸法と実行チャネル長がほぼ等しい75nmルールのMOSFETを実現した。また、水素終端の制御により〜100°Cという低温でSi上へWの選択成長を実現し、WF_6-SiH_4系での反応機構について考察を進め、さらに電極構成への適用の研究を進めている。

Research Products

(11 results)

All Other

All Publications (11 results)

[Publications] D. K. Nayak,: "" High-Mobility Strained-Si PMOSFET's "," IEEE Trans. Electron Devices.Vol. 43. No. 10.1709-1716 (1996)
[Publications] S. Kobayashi.: "" Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas "," J. Crystal Growth.Vol. 174, No-1-4,. in press (1997)
[Publications] T. Watanabe.: "" Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures "," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)
[Publications] Y. Yamamoto,: "" Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System "," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)
[Publications] S. Kobayashi,: "" Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas "," The 9th International Conference on Vapor Growth & Epitaxy. 116. (1996)
[Publications] J. Murota.: "" Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100) "," 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS' 96).24. (1996)
[Publications] J. Murota.: "" Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface "," Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)
[Publications] M. Ishii.: "" 0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes "," ULSI Science and Technology' 97,. (in press). (1997)
[Publications] C. J. Lee.: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" The 14 th International Conference on Chemical Vapor. (in press). (1997)
[Publications] T. Watanabe,: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" The 14th International Conference on Chemical Vapor. (in press). (1997)
[Publications] M. Sakuraba,: "H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.(in press). (1997)

1996 Fiscal Year Annual Research Report

Si系格子デバイス作製のための原子制御CVD装置の開発研究

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] D. K. Nayak,: "" High-Mobility Strained-Si PMOSFET's "," IEEE Trans. Electron Devices.Vol. 43. No. 10.1709-1716 (1996)

[Publications] S. Kobayashi.: "" Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas "," J. Crystal Growth.Vol. 174, No-1-4,. in press (1997)

[Publications] T. Watanabe.: "" Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures "," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)

[Publications] Y. Yamamoto,: "" Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System "," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)

[Publications] S. Kobayashi,: "" Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas "," The 9th International Conference on Vapor Growth & Epitaxy. 116. (1996)

[Publications] J. Murota.: "" Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100) "," 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS' 96).24. (1996)

[Publications] J. Murota.: "" Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface "," Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)

[Publications] M. Ishii.: "" 0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes "," ULSI Science and Technology' 97,. (in press). (1997)

[Publications] C. J. Lee.: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" The 14 th International Conference on Chemical Vapor. (in press). (1997)

[Publications] T. Watanabe,: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" The 14th International Conference on Chemical Vapor. (in press). (1997)

[Publications] M. Sakuraba,: "H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.(in press). (1997)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)