1997 Fiscal Year Annual Research Report

Si系格子デバイス作製のための原子制御CVD装置の開発研究

Research Project

Project/Area Number	07555409
Research Institution	TOHOKU UNIVERSITY
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	澤田康次東北大学, 電気通信研究所, 教授 (80028133) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	原子制御CVD装置 / Si系超格子デバイス / 瞬時加熱CVD法 / プラズマ表面処理 / 極微細デバイス / 不純物ド-ピング / W低温選択成長 / Langmuir型吸着
Research Abstract	本研究では、申請者らの開発してきた瞬時加熱CVD法とプラズマによる表面処理を組み合わせて、成膜時に異種元素の原子層間での混合が生じない原子層成長技術を完成させ、Si系超格子デバイス作製に適用することを目的としてきた。本年度は3年計画の最終年度として、開発したCVD装置を用いて、SiやGe表面での各種反応性原料ガスの原子オーダでの吸着・反応過程を明らかにしデバイス応用することを中心に研究した。すなわち、水素終端の制御条件とその原子オーダ製膜過程への影響、BやPを高濃度にドープしたSiGeエピタキシャル成長における吸着・反応過程、極微細MOSFET製作プロセス、WF_6とSiH_4交互導入によるSi表面へのWの低温選択成長過程、NH_3を用いた低温での極薄Si窒化膜の形成過程、CH_4を用いた低温でのSi表面炭化過程等に研究実績をあげた。原子層成長に大きな影響を与えるSiやGe表面の水素終端をフッ酸処理とpreheat法により制御することを可能とし、SiH_4やGeH_4に引き続いてNH_3やCH_4のSi表面での一原子層吸着・反応がLangmuir型吸着・脱離平衡からの反応過程で表されることを明らかにした。極微細デバイス製作プロセスの研究では、不純物ドープSiGe混晶の選択エピタキシャル成長層をソース・ドレイン層とする新しい極微細MOSFET製作プロセスを構築した。また、水素終端の制御とWF_6とSiH_4の交互導入により、ソース・ドレイン電極構成へ適用するためのSi上へのWの低温選択成長の反応機構について考察を進めた。本研究により、Si系超格子デバイス作製に適用可能な原子制御CVD法の基盤技術の確立を行うことができた。

Research Products

(18 results)

All Other

All Publications (18 results)

[Publications] Y.Yamamoto, et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.印刷中. (1998)
[Publications] M.Sakuraba, et al: "H-Termination on Ge(100) and Si(100) by Diluted HF Dipping and by Annealing in H_2" 5th Int.Symp.Cleaning Technology in Semicond.Device Manufacturing. PV97-35(印刷中). (1997)
[Publications] T.Matsuura, et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.印刷中. (1998)
[Publications] T.Watanabe, et al: "Atomic-Order Nitridaion of the H-Terminated and H-Free Si Surfaces by NH_3" CVD XIV. PV97-25. 97-104 (1997)
[Publications] J.Murota, et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x>Ge_x on Si for Application to Ultrasmall Devlces" National Symp.Am.Vac.Soc.44. 176 (1997)
[Publications] J.Murota, et al: "Heavy Poping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" E-MRS Spring Meeting. 印刷中. (1998)
[Publications] T.Sugiyama, et al: "Atomic-Layer Ething of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci. 112. 187-190 (1997)
[Publications] S.Kobayashi, et al: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. 174(1-4). 686-690 (1997)
[Publications] M.Ishii, et al: "0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes" ULSI Science and Technology ‘97. PV97-3. 441-449 (1997)
[Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge(100)Using SiH_4" National Symp.Am.Vac.Soc.44. 175 (1997)
[Publications] A.Moriya, et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" MRS Spring Meeting. 印刷中. (1998)
[Publications] J.Murota, et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_x Epitaxial Growth Using Ultraclean LPCVD" Silicon Materials Science and Technology VIII. 印刷中. (1998)
[Publications] T.Watanabe, et al: "Atomic-Layer Surface Reaction of SiH_4 on Ge(100)" Jpn.J.Appl.Phys.Part 1. 36(6B). 4042-4045 (1997)
[Publications] A.Izena, et al: "Low-Temperature Surface Reaction of CH_4 on the Si(100) Surface" J.Crystal Growth. 印刷中. (1998)
[Publications] C.J.Lee, at al: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" CVD XIV. PV97-25. 1356-1363 (1997)
[Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x>Ge_x CVD" SDERC 27. 27. 376-379 (1997)
[Publications] T.Matsuura, et al: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc.44. 176 (1997)
[Publications] Y.Honda, et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Plasma Processing XII. 印刷中. (1998)

1997 Fiscal Year Annual Research Report

Si系格子デバイス作製のための原子制御CVD装置の開発研究

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] Y.Yamamoto, et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.印刷中. (1998)

[Publications] M.Sakuraba, et al: "H-Termination on Ge(100) and Si(100) by Diluted HF Dipping and by Annealing in H_2" 5th Int.Symp.Cleaning Technology in Semicond.Device Manufacturing. PV97-35(印刷中). (1997)

[Publications] T.Matsuura, et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.印刷中. (1998)

[Publications] T.Watanabe, et al: "Atomic-Order Nitridaion of the H-Terminated and H-Free Si Surfaces by NH_3" CVD XIV. PV97-25. 97-104 (1997)

[Publications] J.Murota, et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x>Ge_x on Si for Application to Ultrasmall Devlces" National Symp.Am.Vac.Soc.44. 176 (1997)

[Publications] J.Murota, et al: "Heavy Poping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" E-MRS Spring Meeting. 印刷中. (1998)

[Publications] T.Sugiyama, et al: "Atomic-Layer Ething of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci. 112. 187-190 (1997)

[Publications] S.Kobayashi, et al: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. 174(1-4). 686-690 (1997)

[Publications] M.Ishii, et al: "0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes" ULSI Science and Technology ‘97. PV97-3. 441-449 (1997)

[Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge(100)Using SiH_4" National Symp.Am.Vac.Soc.44. 175 (1997)

[Publications] A.Moriya, et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" MRS Spring Meeting. 印刷中. (1998)

[Publications] J.Murota, et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_x Epitaxial Growth Using Ultraclean LPCVD" Silicon Materials Science and Technology VIII. 印刷中. (1998)

[Publications] T.Watanabe, et al: "Atomic-Layer Surface Reaction of SiH_4 on Ge(100)" Jpn.J.Appl.Phys.Part 1. 36(6B). 4042-4045 (1997)

[Publications] A.Izena, et al: "Low-Temperature Surface Reaction of CH_4 on the Si(100) Surface" J.Crystal Growth. 印刷中. (1998)

[Publications] C.J.Lee, at al: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" CVD XIV. PV97-25. 1356-1363 (1997)

[Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x>Ge_x CVD" SDERC 27. 27. 376-379 (1997)

[Publications] T.Matsuura, et al: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc.44. 176 (1997)

[Publications] Y.Honda, et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Plasma Processing XII. 印刷中. (1998)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)