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1996 Fiscal Year Final Research Report Summary

"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

Research Project

Project/Area Number 07837001
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section時限
Research Field 極微細構造工学
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

HASHIZUME Tamotsu  Hokkaido Univ., Fac.of Eng., Ass.Pro., 工学部, 助教授 (80149898)

Co-Investigator(Kenkyū-buntansha) WU Nan-jan  Hokkaido Univ., Fac.of Eng., Res.Ass., 工学部, 助手 (00250481)
AKAZAWA Masamichi  Hokkaido Univ., Fac.of Eng., Ass.Pro., 工学部, 助教授 (30212400)
HASEGAWA Hideki  Hokkaido Univ., Fac.of Eng., Pro., 工学部, 教授 (60001781)
Project Period (FY) 1995 – 1996
Keywordsquantum structure / 2DEG / Schottky barrier / in-plane gate / split gate / quantum wire transistor / single electron transistor / Schottky gate
Research Abstract

The purpose of this study is to investigate the properties of Schottky/2DEG contacts and to realize novel quantum structures utilizing the Schottky/2DEG contacts as in-plane gates. The main results obtained are listed below :
(1) We developed a novel technique to form a direct Schottky contact to the edge of 2DEG in AlGaAs/GaAs heterojunction by use of in-situ electrochemical process, and applied this technique to formation of in-plane-gate type quantum structures.
(2) In-plane-gate type quantum wire transistors were successfully fabricated. Quantized conductance was observed up to 100K,indicating that the novel in-plane gate realized stronger electron confinement than that in conventional split-gate structures.
(3) In-plane-gate type electron interference device (Aharonov-Bohm ring) was also fabricated. By suitable gate tuning, clear magnetoresistance oscillation due to the A-B interference effect was observed at 3.3K.
(4) GaAs based single electron transistors with in-plane gates were successfully developed. All the fabricated devices gave clear Coulomb conductance oscillation and Coulomb blockade characteristics at low temperatures. The maximum operation temperature is 30K.
(5) Single electron transistors having double quantum dots exhibited complicated conductance oscillation behavior that strongly depended on the coupling condition of two dots. This behavior is likely to be explained by the inter-coupling effect between quantum levels in both dots.

  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] S.Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Uno: "0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koyanagi: "Contactless and Nondestructive Characterization of Silicon Surlaces by Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 35. 946-953 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Jinushi: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H Fujikura: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers" Journal of Vacuum Science and Technology.B-14. 2888-2894 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hashizume: "Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (III) Surfaces" J. Vac. Sci. Technol.B-14. 2872-2881 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hashizume: "Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires" Physica B. Vol.227. 42-45 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Physica B. 227. 112-115 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Shiobara: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25巻. 448-455 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション" 表面化学. 17. 567-574 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures," Japanese J. Applied Physics. 36(3). 印刷中 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai, T.Hashizume and H.Hasegawa: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Uno, T.Hasizume, S.Kasai, N.Wu and H.Hasegawa: "0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Koyanagi, T.Hasizume and H.Hasegawa: "Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 35. 946-953 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Jinushi, H.Okada, T.Hashizume and H.Hasegawa: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, S.Kodama, T.Hashizume and H.Hasegawa: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layrs" J.Vacuum Science and Technology. B-14. 2888-2894 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hashizume, S.Koyanagi and H.Hasegawa: "Contactless capacitance-voltage and photoluminescence characterization of ultrathin oxide-silicon interfaces" J.Vac.Sci.Technol. B14. 2872-2881 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hashizume, H.Okada and H.Hasegawa: "Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires" Phisica B. vol.227. 42-45 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Tomozawa, K.Jinushi, H.Okada, T.Hashizume and H.Hasegawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Phisica B. 227. 112-115 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Shiobara, T.Hashizume and H.Hasegawa: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.35. 1159-1164 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, T.Hashizume and et al.: "Fabrication of compound semiconductor quantum wires and dots (in Japanese)" KOUGAKU. 25. 448-455 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, S.Kodama and T.Hashizume: "Surface passivation of compound semiconductor quantum structures by silicon interface control layr (in Japanese)" HYOUMEN KAGAKU. 17. 567-574 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hashizume, S.Shiobara and H.Hasegawa: "Dominant Electron trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" accepted for publication in Jpn.J.Appl.Phys.vol.36, No.3. (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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