1998 Fiscal Year Final Research Report Summary
Joint Study on Hydrogen-Mediated Epitaxy
| Project/Area Number |
08044146
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Field |
表面界面物性
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| Research Institution | Osaka University |
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Principal Investigator |
OURA Kenjiro Osaka University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (60029288)
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| Co-Investigator(Kenkyū-buntansha) |
サラニン A ロシア, 科学アカデミー, 主任研究員
リフシッツ V ロシア, 科学アカデミー, 教授
アイゼル I ドイツ, ミュンヘン大学・工学部, 教授
WATAMORI Michio Osaka University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (80222412)
KATAYAMA Mitsuhiro Osaka University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (70185817)
EISELE Ignaz University of Munich, Faculty of Engineering, Professor
LIFSHITS Victor Russian Academy of Sciences, Institute of Automation and Control Processes, Prof
SARANIN Alexander Russian Academy of Sciences, Institute of Automation and Control Processes, Seni
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| Project Period (FY) |
1996 – 1998
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| Keywords | hydrogen-mediated epitaxy / surface hydrogen / metal / silicon interface / delta-doped structure / surfactant / self-organization / STM / ion beam analysis |
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| Research Abstract |
Our recently discovered phenomena of "hydrogen-mediated epitaxy", in which the epitaxy of a film growing on a Silicon substrate is improved by terminating the substrate by hydrogen atoms, have received considerable attention in connection not only with fundamental science on interaction of hydrogen with surfaces, but also with the possibilities of both the promotion of heteroepitaxy and the formation of atomically abrupt interface. The purpose of this research project is to obtain fundamental data for elucidation of the mechanism of hydrogen-mediated epitaxy on atomic scale, novel development of materials such as semiconductors, metals and ceramics, and fabrication of quantum nano-structures with use of self-organization triggered by atomic hydrogen. The new findings worthy of special mention are as follows.
(1)When hydrogen-mediated epitaxy was applied to fabricate a Gedelta -doped structure in Si, the surface segregation of Ge atoms was suppressed in the presence of hydrogen, resulting in improvement of the interface abruptness.
(2)When hydrogen-mediated epitaxy was applied to Ge thin film growth on Si substrates dynamically supplied atomic hydrogen during Ge growth acted as a surfactant, which promoted layer-by-layer growth. Hydrogen atoms desorbed from the growth front after adsorption for some residence time, indicating a dynamical effect of hydrogen-surfactant.
(3)In the self-organization of 2D metal/Si surface phase into 3D metal clusters triggered by atomic hydrogen, the reconstructed structures of substrate Si atoms were frozen by hydrogen-termination for In/Si and other systems, indicating the possible occurrence of atomic-hydrogen-induced self-organization of substrate Si atoms.
These results cause the key of better understanding of mechanism of hydrogen-mediated epitaxy.
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