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2000 Fiscal Year Final Research Report Summary

"Development of Novel Technology for Integratio of Single Electron Devices"

Research Project

Project/Area Number 08247103
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionTSUKUBA UNIVERSITY

Principal Investigator

KAWABE Mitsuo  Tsukuba Univ., Institute of Applied Phyasics, Pro., 物質工学系, 教授 (80029446)

Co-Investigator(Kenkyū-buntansha) OURA Kenjiro  Osaka Univ., Graduate School of Engineering, Pro., 工学研究科, 教授 (60029288)
YAO Takafumi  Tohoku Univ., Institute for Material Research, Pro., 金属材料研究所, 教授 (60230182)
AOYAGI Yoshinobu  Riken, Senior Researcher., 理化学研究所, 主任研究員 (70087469)
FUJIKURA Hajime  Hokkaido Univ., Graduate School of Electronics and Information Engineering, Ass.Pro., 工学研究科, 助教授 (70271640)
ARAI Shigehisa  Tokyo Inst. Technol., Res.Cent.for Quantum Effect Electronics, Pro., 量子効果エレクトロニクス研究センター, 教授 (30151137)
Project Period (FY) 1996 – 1999
KeywordsSingle electron devices / Quantum Dot / Coupled Quantum Dots / Self-organized growth / Selective growth / Nano Fabication / Nano Sturcture / Quantum wire laser
Research Abstract

For the development of single electron devices, novel technologies of dot formation and integration are required. We have investigated from material side, such as, metal, Si and compound semiconductors and also from view point of fabrication technologies, such as self-assemble growth, fine selective growth, new fabrication methods, improvement of conventional fabrication techniques. Some of the results are as follows.
By using high index substrates high density and well ordered quantum dot arrays were obtained and the formation mechanism was clarified. The dot formation by using surface energy difference was shown. Si quantum dots embedded in SiO_2, V groove Si nanowires, Si quantum wells and Si quantum dots by selective oxidization were demonstrated. For metal dot assembly, focused electron beam and surface termination by hydrogen were shown to be successful. For improvement of conventional fabrication technique, we succeeded in low damage dry etching, fine selective growth for quantum wires and quantum dots and high-performance quantum wire lasers. Based on the technologies developed in this project single electron transistors were fabricated and transistor actions were confirmed.
The technologies which have been developed in this project are useful not only for the development of single electron devices but also for improvement of contventional integrated circuits, optical devices and intvestigation of new physical phenomena in nano-structures.

  • Research Products

    (197 results)

All Other

All Publications (197 results)

  • [Publications] Y.J.Chun: "The Role of Atomic Hydrogen for Formation of Quantum Dots by self-Organizing Process in MBE"Physica B. 227. 299-302 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.J.Chun: "Array of Self-Organized In GaAs Quantum Dots on GaAs(311)B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 35. L1075-L1076 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.J.Chun: "Surfactant Effects of Atomic Hydrogen on Low Temperature Growth of InAs on InP"Jpn.J.Appl.Phys.. 35. L1689-L1691 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Suzuki: "Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy"Jpn.J Appl.Phys.. L1538-L1540 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Kawabe: "Formation of High Density Quantum Dot Array by Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 36. 4078-4083 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okada: "Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope"J.Appl.Phys.. 83. 1844-1847 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K-Y.Jang: "Band-gap energy anormaly observed in AlGaAs grown by atomic hydrogen assisted molecular-beam epitaxy"Solid State Electronics. 42. 1565-1568 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Akahane: "SELF-ORGANIZED QUANTUM DOTS GROWN ON GaAs(311)B BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY"Solid-State Electronics. 42. 1613-1621 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okada: "AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope"ELECTRONICS LETTERS. 34. 1262-1263 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okada: "Basic mechanisms of an atomic force microscope tip-induced nano-oxidation"process of GaAs" Journal of Applied Physics. 83. 7998-8001 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 赤羽浩一: "原子状水素援用MBEによるInGaAs量子ドットの作製"表面科学. 第19巻、第9号. 573-578 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okamoto: "Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 37. L1109-L1112 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Akahane: "Highly packed InGaAs quantum dots on GaAs(311)B"Applied Physics Letters. 73. 3411-3413 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Kawabe: "Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates"Jpn.J.Appl.Phys.. 38. 491-495 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K-Y.Jang: "Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy"J.Cryst.Growth. 197. 54-58 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okada: "An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides"Jpn.J.Appl.Phys.. 38. L160-162 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okamoto: "Effect of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy"Jpn.J.App.Phys.. 38. L230-L233 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sheng Lan: "The Procedure to Realize Two Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays"Jpn.J.Appl.Phys.. 38. 1090-1093 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sheng Lan: "Ordering of InxGal-xAs quantum dots self-organized on GaAs(311)B substrates"J.Vac.Sci.Technol.B. 17(3). 1105-1108 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kawamura: "Growth Mechanism of Surface Dots Self-Assembled on InP(311)B Substrate"Jpn.J.Appl.Phys.. 38. L720-L723 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Y.Jang: "Effects of atomic hydrogen in molecular beam epitaxy of Al(Ga)As"J.Crystal Growth.. 206. 267-270 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Suzuki: "Atomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum-well solar cells"J.Appl.Phys.. 86 No.10. 5858-5861 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Akahane: "Magnetoluminescence Studies of Highly Packed InGaAs Self-Organized Quantum Dots on GaAs(31)B"Jpn.J.Appl.Phys.. 39. 1100-1101 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sheng Lan: "Formation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs(311)B quantum dot superlattices"J.Appl.Phys.. 88. 227 ?235 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tetsuya Nishimura: "Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence"J.Lumin.. 87-89. 494-496 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sheng Lan: "Capture, relaxation and recombination in two-dimensional quantum-dot superlattices"Phys.Rev.. B61. 16847-16853 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yoshitaka Okada: "Scanning probe microscope tip-induced oxidation of GaAs using modulated tip bias"Appl.Phys.. 87. 8754-8758 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fukui: "Coherent Multiatomic Step Formation on GaAs (001) Vicinal Surfaces by MOVPE and Its Application to Quantum Well Wires"Inst.Phys.Conf.Ser.. 145(7). 919-924 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohkuri: "Multiatomic Step Formation on GaAs (001) Vicinal Surfaces During Thermal Treatment"J.Cryst.Growth. 160. 235-240 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Motohisa: "Theoretical and Experimental Investigation of An Electron Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces"Physica B. 227. 295-298 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ishikawa: "Novel In Situ Optical Monitoring Method for Selective Area Metalorganic Vapor Phase Epitaxy"J.Cryst.Growth,. 434-439 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fukui: "Pyramidal Quantum Dot Structures by Self-limited Selective Area Metalorganic Vapor Phase Epitaxy"Solid State Electronics,. 40. 799-802 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Notzel: "Self-Organized Growth of Quantum-Dot Structures"Solid State Electronics. 40. 777-783 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Notzel: "Self-Organized Quantum Dots"Europhysics News. 27. 148-151 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの作製"光学. 25巻(8). 448-455 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Notzel: "Self-Ordered Quantum Dots : A New Growth Mode on High-Index Semiconductor Surfaces"Festkorperprobleme (Advances in Solid State Physics). 35. 103-122 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Photoluminescence and cathodoluminescence investigation of optical properties of InP-based InGaAs ridge quantum wires formed by selective molecular beam epitaxy"Jpn.J.Appl.Phys.. 35. 1333 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hashizume: "Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires"Physica. B227. 42 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG"Physica. B227. 112 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Surface Passivation of In0.53Ga0.47As Ridge Quantum Wires Using Silicon Interface Control Layers"J.Vac.Sci.Technol.. B14. 2888 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates having High-Index Facets"Microelectronics Journal. 28. 887 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy"Appl.Surf.Sci.. 117/118. 695 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kudoh: "Controlled Formation of Metal Semiconductor Interface to 2DEG Layer by in-situ Electrochemical Process and Its Application to In Plane Gated Electron Waveguide Devices"Appl.Surf.Sci.. 117/118. 342 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Jinushi: "Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20K"Jpn.J.Appl.Phys.. 35. 1132 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates"Jpn.J.Appl.Phys.. 35. 6652 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation"Jpn.J.Appl.Phys.. 36. 1937 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates"Jpn.J.Appl.Phys.. 36. 1763 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "Observation of Coulomb Blockade Type Conductance Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates"Jpn.J.Appl.Phys.. 36. 1672 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires"Jpn.J.Appl.Phys.. 36. 4156 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy"Jpn.J.Appl.Phys. 36 (1997). 36. 4092 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two Dimensional Electron Gas"Jpn.J.Appl.Phys. 36 (1997). 36. 1678 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 37. 1584 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates"Thin Solid Filmes. 336. 22 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Solid-State Electron.. 42. 1413 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistors Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE"Solid-State Electron.. 42. 1419 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Jpn.J.Appl.Phys. 38 (1999). 38. 1067 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Jpn.J.Appl.Phys.. 38. 1071 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In0.53Ga0.47As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Jpn.J.Appl.Phys.. 38. 421 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Selective Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays"Microelectronics. 30. 397 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"Inst.Phys.Conf.Ser.. 162. 385 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Realization or InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE"Microelectronic Engineering. 47. 201 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Molecular Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin,. vol.24, No.8. 25-30 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst.Phys.Conf.Ser.. 166. 187 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica. E7. 902 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrate"Physica. E7. 864 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nomura: "Landau level formation in semiconductor quantum dots in a high magneti field"Appl.Phys.Lett.. 71. 2316-2318 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ozasa: "Reversible transition between InGaAs dot structure and InGaAsP flat surface"Appl.Phys.Lett.. 71. 797-799 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Tanaka: "GaN quantum dots in AlxGal-xN confined layer structures"Material Research Society. 449. 135-140 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Tanaka: "Stimulated emission from optically pumped GaN quantum dots""Appl.Phys.Lett.. 71. 1299-1301 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.P.Bird: "Quantum transport in open mesoscopic cavities"Chaos, Solitons and Fractals. 8(7/8). 1299-1324 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.K.Ferry: "Electron transport in a quasi-ballistic narrow wires confined by split metal gates"High magnetic field in semiconductors, ed.by G.Landwehr and W.Ossau, World Scientific,. Vol.1. 299-308 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hirayama: "Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated AlGaN surface"Appl.Phys.Lett.. 67. 1736 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shiokawa: "In-situ observation and correction of resist patterns in atomic force microscope lithograph"Appl.Phys.Lett.. 72. 2481-2483 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nomura: "Calculation of landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation"Phys.Rev.. B58. 6744-6747 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Akinobu Kanda: "Charging and interference effects in the superconducting SET transistor with ring-shaped island"RIKEN Review. No18. 15-16 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.Ramvall: "Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells"J.Appl.Phys.. Vol.84 No.4. 2112-2122 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ishibashi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG"Microelectronic Engineering,. 47. 185-187 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Andressen: "Evidence for a reentrant metal-insulator transition in quantum-dot arrays""Phys.Rev.. B60. 16050-16057 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Aono: "Phenomenological theory of the Rabi oscillations in coupled quantum dots"Physica. B272. 39-41 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Ge: "Insulating state in open quantum dots and quantum dot arrays"Ann.Phys.(Leipzig). 9. 1, 65-68 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ida: "Quantum dot transport in carbon nanotubes"Superlattices and Microstructures. Vol.27, No.5/6. 551-554 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shailos: "Metal-Insulator transition in quantum dot arrays"Superlattices and Microstructures,. Vol.27, No.5/6. 311-314 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.Prasad: "Phase-breaking time variations with temperature and current in an open quantum dot array"Superlattices and Microstructures,. Vol.27, No.5/6. 315-318

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Wu: "Temperature dependence of the photoluminescence of ZnSe/ZnS quantum-dot structures""Phys.Rev.. B 53 No 16. 10485-10488 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yasuda: "Measurement of interface-induced optical anisotropies of a semiconductor heterostructure : ZnSe/GaAs(100)"Phys.Rev.Lett.. 77(2). 326-329 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.Tomasini: "Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates"J.Appl.Phys. 80(11). 6539-6543 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Y.Shen: "The photoluminescence from ZnSe/(ZnSe)/ZnS heterostructures"Materials Science & Engineering. A 217/218. 189-192 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Komura: "Atomic structure of the steps on Si(001) studied by scanning tunneling microscopy"J.Vac.Sci.Technol.. B14. 906-908 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Tomiye: "Nanometer-scale charaterization od SiO2/Si with a scanning capacitance microscope"Appl.Phys.Lett. 69 (26)(1996). 69. 4050-4052 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Komura: "Anomalous electronic properties of a dimer at the rebonded SB step edge on the Si(001)-2x1 surface"Proc.of 23rd Int.Conf. on The Physice of Semiconductors. 2. 871-874 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yasuda: "In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy"J.Vac.Sci.Technol.. B14. 3052-3057 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Komura: "Atomic and electronic structures of rebonded B-type steps on the Si(001)-2x1 surface"Phys.Rev.. B56(7). 3579-3582 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Komura: "Atomic-scale negative differential conductance observed at B-tape surface steps on the Si(001)-2x1 surface"Jpn.J.Appl.Phys.. 36 Pt. 1. 4013-4015 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.L.Zhu: "Single-ion. dot-size and dot-shape effects on two-electron spectra in quantum dots"Nonlinear Optics. 18(2-4). 189-192 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Arai: "Micro-cathodeluminescence study of ZnSe quantum dots embeded in ZnS fabricated by molecular beam epitaxy"Nonlinear Optics. 18(2-4). 307-310 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] E.Kurtz: "Self-organized CdSe/ZnSe quantum dots on a ZnSe (111)A surface"J.Cryst.Gtowth. 184/185. 242-247 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Arai: "Photoluminescence and cathodoluminescence studies of ZuSe quantum structures embedded in ZnS"J.Cryst.Growth. 184/185. 254-258 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.F.Chen: "ZnO quantum pyramids grown on c-plane sapphire by plasma-assisted molecular beam epitax"J.Cryst.Growth. 184/185. 269-273 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] クルツ絵里: "II-VI族半導体量子ドット"応用物理. 67(7). 802-806 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.J.Chun, S.Nakajima, Y.Okada and M.Kawabe: "The Role of Atomic Hydrogen for Formation of Quantum Dots by Self-Organizing Process in MBE"Physica B. 227. 299-302 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.J.chun, S.Nakajima and M.Kawabe: "Array of Self-Organized In GaAs Quantum Dots on GaAs (311) B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 35. L1075-L1076 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.J.Chun, Y.Okada and M.Kawabe: "Surfactant Effects of Atomic Hydrogen on Low Temperature Growth of InAs on InP"Jpn.J.Appl.Phys.. 35. L1689-L1691 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Suzuki, M.Shimoda, Y.Okada and M.Kawabe: "Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 36. L1538-L1540 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kawabe, Y.J.Chun, S.Nakajima and K.Akahne: "Formation of High Density Quantum Dot Array by Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 36. 4078-4083 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okada, S.Amano and M.Kawabe, B.N.Shimbo, J.S.Harris, Jr.: "Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope"J.Appl.Phys.. 83. 1844-1847 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K-Y.Jang, Y.Okada and M.Kawabe: "Band-gap energy anormaly observed in AlGaAs grown by atomic hydrogen assisted molecular beam epitaxy"Solid State Electronics. 42. 1565-1568 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Akahane, K.Okino, Y.Okada and M.Kawabe: "SELF-ORGANIZED QUANTUM DOTS GROWN ON GaAs (311) B BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY"Solid-State Electronics. 42. 1613-1621 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okada, S.Amano, Y.Iuchi, M.Kawabe and J.S.Harris, Jr.: "AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope"ELECTRONICS LETTERS. 34. 1262-1263 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okada, S.Amano and M.Kawabe: "Basic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAs"Journal of Applied Physics. 83. 7998-8001 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okamoto, S.Hashiguchi, Y.Okada and M.Kawabe: "Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 37. L1109-L1112 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Akahane, T.Kawamura, K.Okino, H.Koyama, S.Lan, Y.Okada and M.Kawabe: "Highly packed InGaAs quantum dots on GaAs (311) B"Applied Physics Letters. 73. 3411-3413 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kawabe, K.Akahane, S.Lan, K.Okino, Y.Okada and H.Koyama: "Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates"Jpn.J.Appl.Phys.. 38. 491-495 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K-Y.Jang, Y.Okada, M.Kawabe: "Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy"J.Cryst.Growth. 197. 54-58 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okada, Y.Iuchi, M.Kawabe and J.S.Harris, Jr.: "An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides"Jpn.J.Appl.Phys.. 38. L160-162 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Okamoto, S.Hashiguchi, K.Takahashi, Y.Okada and M.Kawabe.: "Effect of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy"Jpn.J.App.Phys.. 38. L230-L233 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sheng Lan, K.Akahane, Kee-Youn Jang, T.Kawanmura, Y.Okada and M.Kawabe: "The Procedure to Realize Two Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coheretly Coupled Quantum Dot Arrays."Jpn.J.Appl.Phys.. 38. 1090-1093 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sheng Lan, K.Akahane, H.Z.Song, Y.Okada and M.Kawabe: "Ordering of InxGal-xAs quantum dots self-organized on GaAs (311) B substrates"J.Vac.Sci.Technol.B. 17 (3). 1105-1108 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kawamura, K.Akahane, Y.Okada and M.Kawabe: "Growth Mechanism of Surface Dots Self-Assembled on InP (311) B Substrate"Jpn.J.Appl.Phys.. 38. L720-L723 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Y.Jang, Y.Okada, M.Kawabe: "Effects of atomic hydrogen in molecular beam epitaxy of Al (Ga) As"J.Crystal Growth.. 206. 267-270 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Suzuki, T.Kikuchi, M.Kawabe, and Y.Okada: "Atomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum-well solar cells"J.Appl.Phys.. 86 No.10. 5858-5861 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Akahane, S.Lan, T.Kawamura, T.Takamasu, G.Kido, Y.Okada and M.Kawabe: "Magnetoluminescence Studies of Highly Packed InGaAsSelf-Organized Quantum Dots on GaAs (311) B"Jpn.J.Appl.Phys.. 39. 1100-1101 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sheng Lan, Kouichi Akahane, Hai-Zhi Song, Yoshitaka Okada, Mitsuo Kawabe, Tetsuya Nishimura, Tomoji Nishikawa and Osamu Wada: "Formation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs (311) B quantum dot superlattices"J.Appl.Phys.. 88. 227-? 235 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tetsuya Nishimura, Sheng Lan, Kouichi Akahane, Mitsuo Kawabe and Osamu Wada: "Coherent and incoherent carrier dynamies of InGaAs quantum dots analyzed by transient photoluminescence"J.Lumin. 87-89. 494-496 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshitaka Okada, Yoshimasa Iuchi and Mitsuo Kawabe: "Scanning probe microscope tip-induced oxidation of GaAs using modulated tip bias"J.Appl.Phys.. 87. 8754-8758 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fukui, S.Hara, J.Ishizaki, K.Ohkuri and J.Motohisa: "Coherent Multiatomic Step Formation on GaAs (001) Vicinal Surfaces by MOVPE and Its Application to Quantum Well Wires"Inst.Phys.Conf.Ser.. 145 (7). 919-924 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohkuri, J.Ishizaki, S.Hara and T.Fukui: "Multiatomic Step Formation on GaAs (001) Vicinal Surfaces During Thermal Treatment"J.Cryst.Growth. 160. 235-240 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Motohisa, M.Akabori, S.Hara, J.Ishizaki, K.Ohkuri and T.Fukui: "Theoretical and Experimental Investigation of An Electron Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces"Physica B. 227. 295-298 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ishikawa, K.Nakakoshi and T.Fukui: "Novel In Situ Optical Monitoring Method for Selective Area Metalorganic Vapor Phase Epitaxy"J.Cryst.Growth. 167. 434-439 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fukui, K.Kumakura, K.Nakakoshi and J.Motohisa: "Pyramidal Quantum Dot Structures by Self-limited Selective Area Metalorganic Vapor Phase Epitaxy"Solid State Electronics. 40. 799-802 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Notzel, J.Temmyo, A.Kozen, T.Tamamura, T.Fukui and H.Hasegawa: "Self-Organized Growth of Quantum-Dot Structures"Solid State Electronics. 40. 777-783 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Notzel, J.Temmyo, T.Tamamura, T.Fukui and H.Hasegawa: "Self-Organized Quantum Dots"Europhysics News. 27. 148-151 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Notzel, J.Temmyo, A.Kozen, T.Tamamura, T.Fukui and H.Hasegawa: "Self-Ordered Quantum Dots : A New Growth Mode on High-Index Semiconductor Surfaces"Feslkorperprobleme 35 (Advances in Solid State Physics). 103-122 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura and H.Hasegawa: "Photoluminescence and cathodoluminescence investigation of optical properties of InP -based InGaAs ridge-quantum wires formed by selective molecular beam epitaxy"Jpn.J.Appl.Phys. 35. 1333 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hashizume, H.Okada and H.Hasegawa: "Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires"Physica B. 227. 42 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Tomozawa, K.Jinushi H.Okada T.Hashizume and H.Hasegawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG"Physica B. 227. 112 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, S.Kodama, T.Hashizume and H.Hasegawa: "Surface Passivation of In0.53Ga0.47As Ridge Quantum Wires Using Silicon Interface Control Layers"J.Vac.Sci.Technol.B. 14. 2888 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa and H.Fujikura: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates having High-Index Facets"Microelectronics Journal. 28. 887 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kihara, H.Fujikura and H.Hasegawa: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy"Appl.Surf.Sci.. 117/118. 695 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kudoh, Hiroshi Okada, Tamotsu Hashizume and Hideki Hasegawa: "Controlled Formation of Metal Semiconductor Interface to 2DEG Layer by in-situ Electrochemical Process and Its Application to In Plane Gated Electron Waveguide Devices"Appl.Surf.Sci.. 117/118. 342 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Jinushi, H.Okada, T.Hashizume and H.Hasegawa: "Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20K"Jpn.J.Appl.Phys.. 35. 1132 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai, T.Hashizume and H.Hasegawa: "Electron Beam Induced Currenet Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates"Jpn.J.Appl.Phys.. 35. 6652 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, M.Kubo and H.Hasegawa: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation"Jpn.J.Appl.Phys.. 36. 1937 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Araki, Y.Hanada, H.Fujikura and H.Hasegawa: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates"Jpn.J.Appl.Phys.. 36. 1763 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada, H.Fujikura, T.Hashizume and H.Hasegawa: "Observation of Coulomb Blockade Tybe conductance Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on Inp Substrates"Jpn.J.Appl.Phys.. 36. 1672 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada, S.Kasai, H.Fujikura, T.Hashizume and H.Hasegawa: "Basic Control characteristics of Novel Schottky In Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires"Jpn.J.Appl.Phys.. 36. 4156 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, M.Araki, Y.Hanada, M.Kihara and H.Hasegawa: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 36. 4092 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kasai, K.Jinushi, H.Tomozawa and H.Hasegawa: "Fabrication and Characterization of GaAs Single Electron Devices Having single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two Dimensional Electron Gas"Jpn.J.Appl.Phys.. 36. 1678 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, Y.Hanada, M.Kihara and H.Hasegawa: "Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 37. 1584 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, M.Kihara and H.Hasegawa: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates"Thin Solid Filmes. 336. 22 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hanad, N.Ono, H.Fujikura and H.Hasegawa: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Stuctures by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Solid-State Electron.. 42. 1413 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okada, H.Fujikura, T.Hashizume and H.Hasegawa: "A Novel Wrap-Gate-Controlled Single Electron Transistors Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE"Solid-State Electron.. 42. 1419 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, M.Kihara and H.Hasegawa: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Redge Quantum Wires for Improvement of Wire Uniformity"Jpn.J.Appl.Phys.. 38. 1067 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, H.Okada, H.Fujikura and H.Hasegawa: "Size-controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Jpn.J.Appl.Phys.. 38. 1071 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, Y.Hanada, T.Muranaka and H.Hasegawa: "Control of Dot Size and Tunneling Barrier Profile in In0.53Ga0.47As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates"Jpn.J.Appl.Phys.. 38. 421 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, T.Muranaka and H.Hasegawa: "Selective Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays"Microelectronics. 30. 397 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Ono, H.Fujikura and H.Hasegawa: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires."Inst.Phys.Conf.Ser.. 162. 385 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, H.Okada, H.Fujikura and H.Hasegawa: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MB"Mieroelectronic Engineering. 47. 201 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa, H.Fujikura and H.Okada: "Molecular Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. vol.24, No.8. 25-30 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Muranaka, H.Fujikura and H.Hasegawa: "Selective MBE Growth of InGaAs Quantum Wire-Dot coupled Structures with controlled Double-Barrier Potential Protiles"Inst.Phys.Conf.Ser.. 166. 187 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Jiang, H.Fujikura and H.Hasegawa: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. 7. 902 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fujikura, T.Muranaka and H.Hasegawa: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nomura, L.Samuelson, M.Pistol, K.Uchida, and N.Miura: "Landau level formation in semiconductor quantum dots in a high magneti field"Appl.Phys.Lett.. 71. 2316-2318 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ozasa, Y.Aoyagi, Y.J.Park and L.Samuelson: "Reversible transition between InGaAs dot structure and InGaAsP flat surface"Appl.Phys.Lett.. 71. 797-799 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Tanaka, H.Hirayama, S.Iwai and Y.Aoyagi: "GaN quantum dots in AlxGal-xN confined layer stuctures"Material Research Society. 449. 135-140 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Tanaka, H.Hirayama, S.Iwai and Y.Aoyagi: "Stimulated emission from optically pumped GaN quantum dots"Appl.Phys.Lett.. 71. 1299-1301 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.P.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano, R.Akis, D.K.Ferry, D.P.Pivin Jr. K.M.Connolly, R.P.Taylor, R.Newbury, D.M.Olatona, R.Wirtz, Y.Ochiai and Y.Okubo: "Quantum transport in open mesoscopic cavities"Chaos, Solitons and Fractals. 8 (7/8). 1299-1324 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.K.Ferry, R.Akis, D.P.Pivin Jr, K.M.Connolly, J.P.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano and Y.Ochiai: "Electron transport in a quasi-ballistic narrow wires confined by split metal gates, " High magnetic field in semiconductors"ed.by G.Landwehr and W.Ossau, World Scientific. Vol.1. 299-308 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hirayama, S.Tanaka, P.Ramvall and Y.Aoyagi: "Intense photoluminescence from selp-assembling InGaN quantum dots artificially fabricated AlGaN surface"Appl.Phys.Lett.. 67. 1736 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shiokawa, Y.Aoyagi, M.Shigeno and S.Namba: "In-situ observation and correction of resist patterns in atomic force microscope lithography"Appl.Phys.Lett.. 72. 2481-2483 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nomura, L.Samuelson, C.Pryor, M.E.Pistol, M.Stopa, K.Uchida, N.Miura, T.Sugano and Y.Aoyagi: "Calculation of landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation"Phys.Rev.B. 58. 6744-6747 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akinobu Kanda, Martin C.Geisler, Koji Ishibashi, Yoshinobu Aoyagi and Takuo Sugano: "Charging and interference effects in the superconducting SET transistor with ring-shaped island"RIKEN Review.. No18. 15-16 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.Ramvall, N.Carlsson, P.Omling, L.Samuelson, W.Seifert, Q.Wang K.Ishibashi and Y.Aoyagi: "Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells"J.Appl.Phys. Vol.84 No.4. 2112-2122 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ishibashi, T.Ida, H.Kotani, Y.Ochiai, T.Sugano and Y.Aoyagi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG"Microelectronic Engineering.. 47. 185-187 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Andressen, C.Prasad, F.Ge, L.H.Lin, N.Aoki, K.Nakao, J.P.Bird, D.K.Ferry, Y.Ochiai, K.Ishibashi, Y.Aoyagi and T.Sugano: "Evidence for a reentrant metal-insulator transition in quantum-dot arrays"Phys.Rev.B. 60. 16050-16057 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Aono, K.Ishibashi and Y.Aoyagi: "Phenomenological theory of the Rabi oscillations in coupled quantum dots"Physica B. 272. 39-41 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Ge, C.Prasad, A.Andressen, J.P.Bird, D.K.Ferry, L.H.Lin, N.Aoki, K.Nakao, Y.Ochiai, K.Ishibashi, Y.Aoyagi and T.Sugano: "Insulating state in open quantum dots and quantum dot arrays"Ann.Phys.(Leipzig). 9. 65-68 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ida, K.Ishibashi, K.Tsukagoshi, B.Alphenaar and Y.Aoyage: "Quantum dot transport in carbon nanotubes"Superlattices and Microstructures. Vol.27, No.5/6. 551-554 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shailos, M.El.Hassen, C.Prassad, J.P.Bird, D.K.Ferry, L.H.Lin, N.Aoki, K.Nakao, Y.Ochiai, K.Ishibashi, Y.Aoyagia and T.Sugano: "Metal-Insulator transition in quantum dot arrays"Superlattices and Microstructures. Vol.27, No.5/6. 311-314 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Prasad, a.Andresen, F.Ge, J.P.Bird, D.K.Ferry, L.H.Lin, N.Aoki, K.Nakao, Y.Ochiai, K.Ishibashi, Y.Aoyagi, T.Sugano: "Phase-breaking time variations with temperature and current in an open quatum dot array"Superlattices and Microstructures. Vol.27, No.5/6. 315-318 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Wu, K.Arai and T.Yao: "Temperature dependence of the photoluminescence of ZnSe/ZnS quantuam-dot structures"Phys.Rev.B. 53 No16. 10485-10488 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yasuda, K.Kimura, S.Miwa, L.H.Kuo, C.G.Jin, K.Tanaka and T.Yao: "Measurement of interface-induced optical anisotropies of a semiconductor heterostructure : ZnSe/GaAs (100)"Phys.Rev.Lett. 77 (2). 326-329 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.Tomasini, K.Arai, Y.H.Wu and T.Yao: "Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates"J.Appl.Phys.. 80 (11). 6539-6543 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Y.Shen, S.Koyama, T.Goto, K.Arai, A.Kasuya, Y.H.Wu and T.yao: "The photoluminescence from ZnSe/(ZnSe)1/ZnS heterostructures"Materials Science & Engineering A. 217/218. 189-192 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Komura, M.Yoshimura and T.Yao: "Atomic structure of the steps on Si (001) studied by scanning tunneling microscopy"J.Vac.Sci.Technol.B. 14. 906-908 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Tomiye, T.Yao, H.Kawami and T.Hayashi: "Nanometer-scale charaterization od SiO2/Si with a scanning capacitance microscope"Appl.Phys.Lett.. 69 (26). 4050-4052 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Komura, M.Yoshimura and T.Yao: "Anomalous electronic properties of a dimer at the rebonded SB step edge on the Si (001)-2x1 surface"Proc.of 23rd Int.Conf. on The Physice of Semiconductors. 2. 871-874 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yasuda, L.H.Kuo, K.Kimura, S.Miwa, C.G.Jin, K.Tanaka and T.Yao: "In situ characterization of ZnSe/GaAs (100) interfaces by reflectance difference spectroscopy"J.Vac.Sci.Technol.B. 14. 3052-3057 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Komura, T.Yao and M.Yoshimura: "Atomic and Electronic structures of rebonded B-type steps on the Si (001)-2x1 surface"Jpn.J.Appl.Phys.. 36 Pt.1 (6B). 4013-4015 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Z.Q.Zhu, E.Kurtz, K.Arai, Y.F.Chen, D.M.Bagnall, P.Tomashini, F.Lu, T.Sekiguchi, T.Yao, T.Yasuda and Y.Segawa: "Self-organized growth of II-VI wide bandgap quantum dot structures"Phys.Stat.Sol.(b). 202. 827-833 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Tomiye, H.Kawami and T.Yao: "Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope"Appl.Surf.Sci.. 117/118. 166-170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X.Wang, Z.M.Jiang, H.J.Zhu, F.Fu, D.M.Iluang, X.H.Liu, C.W.Hu, Y.F.chen, Z.Q.Zhu and T.Yao: "Garmanium dot with highly uniform size distribution grown on Si (001) substrate by molecular beam epitaxy"Appl.Phys.Lett.. 71 (24). 3543-3545 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Wu, K.Arai, N.Kuroda, T.Yao, A.Yamamoto, M.Y.Shen and T.Goto: "Optical properties of manganese doped ZnSe/ZnS quantum dots grown by molecular beam epitaxy"Jpn.J.Appl.Phys. 36 Pt.2 (12B). 1648-1650 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] E.Kurtz, H.D.Jung, T.Hanada, Z.Q.Zhu, T.Sekiguchi and T.Yao: "The Growth and photoluminescence properties of self-organized CdSe quantum dots on a (111) A ZnSe surfaces"Nonlinear Optics. 18 (2-4). 93-98 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.F.Chen, D.M.Bagnall, Z.Q.Zhu, T.Sekiguchi, K.T.Park, K.Hiraga and T.Yao: "Observation of zinc oxide quantum pyramids grown by plasma enhanced molecular beam epitaxy"Nonlinear Optics. 18 (2-4). 107-110 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Z.M.Jiang, H.J.Zhu, F.Lu, D.M.Huang, X.Wang, Y.F.Chen, Z.Q.Zhu and T.Yao: "A silicon based low dimensional quantum structure self-assembly grown germanium quantum dots"Nonlinear Optics. 18 (2-4). 153-160 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.L.Zhu, Z.Q.Li, Z.Q.Zhu, Y.Kawazoe and T.Yao: "Single-ion, dot-size and dot-shape effects on two-electron spectra in quantum dots"Nonlinear Optics. 18 (2-4). 189-192 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Arai, Z.Q.Zhu, T.Sekiguchi, T.Yasuda, F.Lu, Y.Segawa, N.Kuroda and T.Yao: "Micro-cathodeluminescence study of ZnSe quantum dots embeded in ZnS fabricated by molecular beam epitaxy"Nonlinear Optics. 18 (2-4). 307-310 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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